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公开(公告)号：US11145504B2
公开(公告)日：2021-10-12
申请号：US16597466
申请日：2019-10-09
Applicant: Applied Materials, Inc.
Inventor： Zhijun Jiang , Ganesh Balasubramanian , Arkajit Roy Barman , Hidehiro Kojiri , Xinhai Han , Deenesh Padhi , Chuan Ying Wang , Yue Chen , Daemian Raj Benjamin Raj , Nikhil Sudhindrarao Jorapur , Vu Ngoc Tran Nguyen , Miguel S. Fung , Jose Angelo Olave , Thian Choi Lim
Abstract: A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.
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公开(公告)号：US10113234B2
公开(公告)日：2018-10-30
申请号：US14801348
申请日：2015-07-16
Applicant: Applied Materials, Inc.
Inventor： Bo Xie , Alexandros T. Demos , Vu Ngoc Tran Nguyen , Kelvin Chan , He Ren , Kang Sub Yim , Mehul B. Naik
IPC: C23C16/48 , C23C16/40 , H01L21/768 , H01L21/3105
Abstract: Embodiments described herein provide a method for sealing a porous low-k dielectric film. The method includes forming a sealing layer on the porous low-k dielectric film using a cyclic process. The cyclic process includes repeating a sequence of depositing a sealing layer on the porous low-k dielectric film and treating the sealing layer until the sealing layer achieves a predetermined thickness. The treating of each intermediate sealing layer generates more reactive sites on the surface of each intermediate sealing layer, which improves the quality of the resulting sealing layer.
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