DIRECT LIFT CATHODE FOR LITHOGRAPHY MASK CHAMBER

    公开(公告)号:US20220351949A1

    公开(公告)日:2022-11-03

    申请号:US17242685

    申请日:2021-04-28

    Inventor: Khiem Nguyen

    Abstract: Exemplary lithography mask processing chambers may include a substrate support that includes a plurality of lift pins that are vertically translatable relative to a top surface of the substrate support. The lithography mask processing chambers may include a cover ring positioned atop the substrate support. The cover ring may define a rectilinear substrate seat. A top surface of the rectilinear substrate seat may be elevated above the top surface of the substrate support. An outer periphery of the rectilinear substrate seat may be positioned outward of the plurality of lift pins.

    Direct lift process apparatus
    2.
    发明授权

    公开(公告)号:US09978632B2

    公开(公告)日:2018-05-22

    申请号:US14730192

    申请日:2015-06-03

    CPC classification number: H01L21/68742 C23C16/458 H01J37/32715 H01J37/32788

    Abstract: The present disclosure provides a substrate support assembly includes a substrate pedestal having an upper surface for receiving and supporting a substrate, a cover plate disposed on the substrate support pedestal, and two or more lift pins movably disposed through the substrate support pedestal and the cover plate. The cover plate includes a disk body having a central opening. The two or more lift pins are self supportive. Each of the two or more lift pins comprises one or more contact pads, and the contact pads of the lift pins extend into to the central opening of the cover plate to receive and support a substrate at an edge region of the substrate.

    Direct lift cathode for lithography mask chamber

    公开(公告)号:US11710621B2

    公开(公告)日:2023-07-25

    申请号:US17242685

    申请日:2021-04-28

    Inventor: Khiem Nguyen

    CPC classification number: H01J37/32715 G03F7/70716 H01J2237/20235

    Abstract: Exemplary lithography mask processing chambers may include a substrate support that includes a plurality of lift pins that are vertically translatable relative to a top surface of the substrate support. The lithography mask processing chambers may include a cover ring positioned atop the substrate support. The cover ring may define a rectilinear substrate seat. A top surface of the rectilinear substrate seat may be elevated above the top surface of the substrate support. An outer periphery of the rectilinear substrate seat may be positioned outward of the plurality of lift pins.

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