公开(公告)号：US20030140857A1

公开(公告)日：2003-07-31

申请号：US10058670

申请日：2002-01-28

Applicant: Applied Materials, Inc.

Inventor： Salvador P. Umotoy ,  Lawrence Chung-Lai Lei ,  Ling Chen ,  Anzhong Chang ,  Seshadri Ganguli

IPC: C23C016/00

CPC classification number: C23C16/45563 ,  C23C16/16 ,  C23C16/448 ,  C23C16/45582

Abstract: In accordance with an embodiment of the invention, a processing chamber is configured to carry out chemical vapor deposition (CVD). An ampoule vaporizer is fastened to the chamber, and is configured to convert a fluorine-free tungsten-containing solid compound to vapor delivered to the chamber for use in the CVD. In one embodiment, the solid compound is tungsten hexacarbonyl (W(CO)6). In another embodiment, a mass flow controller is fastened to the chamber, and is configured to receive the vapor from the ampoule vaporizer, regulate the flow of the vapor, and deliver the vapor to the chamber. In yet another embodiment, the chamber includes a funnel-shaped dispersion plate configured to receive a gas mixture and direct the gas mixture toward a surface of the wafer in a substantially uniform manner.

Abstract translation: 根据本发明的实施例，处理室被配置为执行化学气相沉积（CVD）。 安瓿蒸发器被固定到室，并且被配置为将无氟含钨固体化合物转化成输送到室中用于CVD中的蒸气。 在一个实施方案中，固体化合物是六羰基钨（W（CO）6）。 在另一个实施例中，质量流量控制器被紧固到腔室，并且被配置为从安瓿蒸发器接收蒸气，调节蒸汽的流动并将蒸气输送到腔室。 在另一个实施例中，腔室包括漏斗形分散板，其配置成接收气体混合物并以基本均匀的方式将气体混合物引向晶片的表面。