公开(公告)号：US20240069448A1

公开(公告)日：2024-02-29

申请号：US17900124

申请日：2022-08-31

Applicant: Applied Materials, Inc.

Inventor： Prayudi LIANTO ,  Liu JIANG ,  Marvin Louis BERNT ,  El Mehdi BAZIZI ,  Guan Huei SEE

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F9/7088

Abstract: A method for forming alignment marks leverages pad density and critical dimensions (CDs). In some embodiments, the method includes forming first and second alignment marks on a first substrate and a second substrate where the alignment marks have a width within 5% of the associated CD of copper pads on the respective substrates and forming a first and second dummy patterns around the first and second alignment marks. The first and second dummy patterns have dummy pattern densities within 5% of the respective copper pad density of the first and second substrates and CDs within 5% of the respective copper pad CDs. In some embodiments, alignment marks with physical dielectric material protrusions and recesses on opposite substrate surfaces may further enhance bonding.