公开(公告)号：US12068153B2

公开(公告)日：2024-08-20

申请号：US17829288

申请日：2022-05-31

申请人： Applied Materials, Inc.

发明人： Kaushik Alayavalli ,  Andrew Nguyen ,  Edward Haywood ,  Lu Liu ,  Malav Kapadia

IPC分类号： H01J21/02 ,  H01J37/32 ,  H01L21/02

CPC分类号： H01L21/02087 ,  H01J37/3244 ,  H01J2237/335

摘要： Embodiments disclosed herein include a method for cleaning a bevel area of a substrate support disposed within a plasma processing chamber. In one example the method begins by placing a cover substrate on a substrate support disposed in an interior volume of a processing chamber. A cleaning gas is provided into the interior volume of the processing chamber. A plasma is struck in the interior volume of the processing chamber. A cleaning gas is provided through the substrate support to a bevel edge area defined between an outer diameter of the cover substrate and an edge ring disposed on the substrate support.

公开(公告)号：US11447868B2

公开(公告)日：2022-09-20

申请号：US15606739

申请日：2017-05-26

申请人： Applied Materials, Inc.

发明人： Andrew Nguyen ,  Kartik Ramaswamy ,  Michael G. Chafin ,  Yang Yang ,  Anilkumar Rayaroth ,  Lu Liu

IPC分类号： C23C16/46 ,  C23C16/458 ,  C23C16/48 ,  H01J37/32

摘要： Embodiments of the disclosure relate to apparatus and method for a tunable plasma process within a plasma processing chamber. In one embodiment of the disclosure, a heater assembly for a plasma processing chamber is disclosed. The heater assembly includes a resistive heating element, a first lead coupling the resistive heating element to an RF filter and a tunable circuit element operable to adjust an impedance between the resistive heating element and the RF filter. Another embodiment provides a method for controlling a plasma process in a plasma processing chamber by forming a plasma from a process gas present inside the plasma processing chamber and adjusting an impedance between a resistive heating element and an RF filter coupled between the resistive heating element and a power source for the resistive heating element, while the plasma is present in the plasma processing chamber.

公开(公告)号：US12125689B2

公开(公告)日：2024-10-22

申请号：US17940513

申请日：2022-09-08

申请人： Applied Materials, Inc.

发明人： Kartik Ramaswamy ,  Andrew Nguyen ,  Yang Yang ,  Sathya Ganta ,  Fernando Silveira ,  Yue Guo ,  Lu Liu

IPC分类号： H01J37/32

CPC分类号： H01J37/32862 ,  H01J37/32082 ,  H01J2237/334

摘要： Methods and apparatus for forming plasma in a process chamber use an annular exciter formed of a first conductive material with a first end electrically connected to an RF power source that provides RF current and a second end connected to a ground and an annular applicator, physically separated from the annular exciter, formed of a second conductive material with at least one angular split with an angle forming an upper overlap portion and a lower overlap portion separated by a high K dielectric material which is configured to provide capacitance in conjunction with an inductance of the annular applicator to form a resonant circuit that is configured to resonate when the annular exciter flows RF current that inductively excites the annular applicator to a resonant frequency which forms azimuthal plasma from the annular applicator.