公开(公告)号：US20230352349A1

公开(公告)日：2023-11-02

申请号：US18349930

申请日：2023-07-10

Applicant: Applied Materials, Inc.

Inventor： Mandar B. Pandit ,  Man-Ping Cai ,  Wenhui Li ,  Michael Wenyoung Tsiang ,  Praket Prakash Jha ,  Jingmin Leng

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/52 ,  C23C16/40 ,  H01L21/67

CPC classification number: H01L22/20 ,  H01L21/02164 ,  C23C16/52 ,  C23C16/401 ,  H01L21/67288

Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.

公开(公告)号：US20220115275A1

公开(公告)日：2022-04-14

申请号：US17070751

申请日：2020-10-14

Applicant: Applied Materials, Inc.

Inventor： Mandar B. Pandit ,  Man-Ping Cai ,  Wenhui Li ,  Michael Wenyoung Tsiang ,  Praket Prakash Jha ,  Jingmin Leng

IPC: H01L21/66 ,  H01L21/02 ,  H01L21/67 ,  C23C16/40 ,  C23C16/52

Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.

公开(公告)号：US12300554B2

公开(公告)日：2025-05-13

申请号：US18349930

申请日：2023-07-10

Applicant: Applied Materials, Inc.

Inventor： Mandar B. Pandit ,  Man-Ping Cai ,  Wenhui Li ,  Michael Wenyoung Tsiang ,  Praket Prakash Jha ,  Jingmin Leng

IPC: H01L21/66 ,  C23C16/40 ,  C23C16/52 ,  H01L21/02 ,  H01L21/67

Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.

公开(公告)号：US11699623B2

公开(公告)日：2023-07-11

申请号：US17070751

申请日：2020-10-14

Applicant: Applied Materials, Inc.

Inventor： Mandar B. Pandit ,  Man-Ping Cai ,  Wenhui Li ,  Michael Wenyoung Tsiang ,  Praket Prakash Jha ,  Jingmin Leng

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/52 ,  C23C16/40 ,  H01L21/67

CPC classification number: H01L22/20 ,  C23C16/401 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/67288

Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.

公开(公告)号：US20220375747A1

公开(公告)日：2022-11-24

申请号：US17325764

申请日：2021-05-20

Applicant: Applied Materials, Inc.

Inventor： Wenhui Li ,  Praket P. Jha ,  Mandar B. Pandit ,  Man-Ping Cai ,  Jingmei Liang ,  Michael Wenyoung Tsiang

IPC: H01L21/02

Abstract: Processing methods disclosed herein comprise forming a nucleation layer and a flowable chemical vapor deposition (FCVD) film on a substrate surface by exposing the substrate surface to a silicon-containing precursor and a reactant. By controlling at least one of a precursor/reactant pressure ratio, a precursor/reactant flow ratio and substrate temperature formation of miniature defects is minimized. Controlling at least one of the process parameters may reduce the number of miniature defects. The FCVD film can be cured by any suitable curing process to form a smooth FCVD film.