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    Systems and methods for analyzing defects in CVD films
    1.
    发明授权
    Systems and methods for analyzing defects in CVD films 有权

    公开(公告)号：US12300554B2

    公开(公告)日：2025-05-13

    申请号：US18349930

    申请日：2023-07-10

    Applicant: Applied Materials, Inc.

    Inventor： Mandar B. Pandit ,  Man-Ping Cai ,  Wenhui Li ,  Michael Wenyoung Tsiang ,  Praket Prakash Jha ,  Jingmin Leng

    IPC: H01L21/66 ,  C23C16/40 ,  C23C16/52 ,  H01L21/02 ,  H01L21/67

    Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.

    Flowable CVD Film Defect Reduction
    3.
    发明申请
    Flowable CVD Film Defect Reduction 有权

    公开(公告)号：US20220375747A1

    公开(公告)日：2022-11-24

    申请号：US17325764

    申请日：2021-05-20

    Applicant: Applied Materials, Inc.

    Inventor： Wenhui Li ,  Praket P. Jha ,  Mandar B. Pandit ,  Man-Ping Cai ,  Jingmei Liang ,  Michael Wenyoung Tsiang

    IPC: H01L21/02

    Abstract: Processing methods disclosed herein comprise forming a nucleation layer and a flowable chemical vapor deposition (FCVD) film on a substrate surface by exposing the substrate surface to a silicon-containing precursor and a reactant. By controlling at least one of a precursor/reactant pressure ratio, a precursor/reactant flow ratio and substrate temperature formation of miniature defects is minimized. Controlling at least one of the process parameters may reduce the number of miniature defects. The FCVD film can be cured by any suitable curing process to form a smooth FCVD film.

    SYSTEMS AND METHODS FOR MATERIAL BREAKTHROUGH
    4.
    发明申请
    SYSTEMS AND METHODS FOR MATERIAL BREAKTHROUGH 审中-公开

    公开(公告)号：US20190311900A1

    公开(公告)日：2019-10-10

    申请号：US15949341

    申请日：2018-04-10

    Applicant: Applied Materials, Inc.

    Inventor： Mandar B. Pandit ,  Mang-Mang Ling ,  Tom Choi ,  Nitin K. Ingle

    IPC: H01L21/033 ,  H01L21/311 ,  H01L21/67

    Abstract: Methods may be performed to limit footing, pitch walking, and other alignment issues. The methods may include forming a treatment gas plasma within a processing region of a semiconductor processing chamber. The methods may further include directing effluents of the treatment gas plasma towards a semiconductor substrate within the processing region of the semiconductor processing chamber, and anisotropically modifying a surface of a first material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may also include passivating a surface of a second material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may further include forming a remote fluorine-containing plasma to produce fluorine-containing plasma effluents, and flowing the fluorine-containing plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include selectively removing the modified surface of the first material from the semiconductor substrate.

    SYSTEMS AND METHODS FOR ANALYZING DEFECTS IN CVD FILMS
    6.
    发明申请
    SYSTEMS AND METHODS FOR ANALYZING DEFECTS IN CVD FILMS 有权

    公开(公告)号：US20220115275A1

    公开(公告)日：2022-04-14

    申请号：US17070751

    申请日：2020-10-14

    Applicant: Applied Materials, Inc.

    Inventor： Mandar B. Pandit ,  Man-Ping Cai ,  Wenhui Li ,  Michael Wenyoung Tsiang ,  Praket Prakash Jha ,  Jingmin Leng

    IPC: H01L21/66 ,  H01L21/02 ,  H01L21/67 ,  C23C16/40 ,  C23C16/52

    Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.

    Self-aligned process
    9.
    发明授权
    Self-aligned process 有权
    自我调整的过程

    公开(公告)号：US09343272B1

    公开(公告)日：2016-05-17

    申请号：US14592509

    申请日：2015-01-08

    Applicant: Applied Materials, Inc.

    Inventor： Mandar B. Pandit ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01J37/32 ,  H01L21/3065

    CPC classification number: H01J37/32412 ,  H01J37/32357 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/76825 ,  H01L21/76897

    Abstract: Methods of forming self-aligned structures on patterned substrates are described. The methods may be used to form metal lines or vias without the use of a separate photolithography pattern definition operation. Self-aligned contacts may be produced regardless of the presence of spacer elements. The methods include directionally ion-implanting a gapfill portion of a gapfill silicon oxide layer to implant into the gapfill portion without substantially ion-implanting the remainder of the gapfill silicon oxide layer (the sidewalls). Subsequently, a remote plasma is formed using a fluorine-containing precursor to etch the patterned substrate such that the gapfill portions of silicon oxide are selectively etched relative to other exposed portions exposed parallel to the ion implantation direction. Without ion implantation, the etch operation would be isotropic owing to the remote nature of the plasma excitation during the etch process.

    Abstract translation: 描述了在图案化衬底上形成自对准结构的方法。 该方法可用于形成金属线或通孔而不使用单独的光刻图案定义操作。 可以产生自对准的触点，而不管间隔元件的存在。 所述方法包括定向地离子注入间隙填充氧化硅层的间隙填充部分以注入到间隙填充部分中，而基本上不离子注入间隙填充氧化硅层（侧壁）的剩余部分。 随后，使用含氟前体形成远程等离子体以蚀刻图案化衬底，使得相对于平行于离子注入方向暴露的其它暴露部分选择性地蚀刻氧化硅的间隙填充部分。 在没有离子注入的情况下，蚀刻操作将是各向同性的，这是由于在蚀刻过程期间等离子体激发的远程特性。

    SYSTEMS AND METHODS FOR MATERIAL BREAKTHROUGH
    10.
    发明申请
    SYSTEMS AND METHODS FOR MATERIAL BREAKTHROUGH 审中-公开

    公开(公告)号：US20200043734A1

    公开(公告)日：2020-02-06

    申请号：US16599447

    申请日：2019-10-11

    Applicant: Applied Materials, Inc.

    Inventor： Mandar B. Pandit ,  Mang-Mang Ling ,  Tom Choi ,  Nitin K. Ingle

    IPC: H01L21/033 ,  H01L21/311 ,  H01L21/67

    Abstract: Methods may be performed to limit footing, pitch walking, and other alignment issues. The methods may include forming a treatment gas plasma within a processing region of a semiconductor processing chamber. The methods may further include directing effluents of the treatment gas plasma towards a semiconductor substrate within the processing region of the semiconductor processing chamber, and anisotropically modifying a surface of a first material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may also include passivating a surface of a second material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may further include forming a remote fluorine-containing plasma to produce fluorine-containing plasma effluents, and flowing the fluorine-containing plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include selectively removing the modified surface of the first material from the semiconductor substrate.

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