公开(公告)号：US09472416B2

公开(公告)日：2016-10-18

申请号：US14506058

申请日：2014-10-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Jim Zhongyi He ,  Ping Han Hsieh ,  Melitta Manyin Hon ,  Chun Yan ,  Xuefeng Hua

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02057 ,  H01L21/32132 ,  H01L21/32137

Abstract: Methods for surface interface engineering in semiconductor fabrication are provided herein. In some embodiments, a method of processing a substrate disposed atop a substrate support in a processing volume of a processing chamber includes: generating an ion species from an inductively coupled plasma formed within the processing volume of the processing chamber from a first process gas; exposing a first layer of the substrate to the ion species to form an ammonium fluoride (NH4F) film atop the first layer, wherein the first layer comprises silicon oxide; and heating the substrate to a second temperature at which the ammonium fluoride film reacts with the first layer to selectively etch the silicon oxide.

Abstract translation: 本文提供半导体制造中的表面界面工程方法。 在一些实施例中，处理设置在处理室的处理体积中的衬底支撑件顶部的衬底的方法包括：从处理室的处理容积中形成的电感耦合等离子体从第一工艺气体产生离子物质; 将所述衬底的第一层暴露于所述离子种类以在所述第一层顶部形成氟化铵（NH 4 F）膜，其中所述第一层包含氧化硅; 以及将所述衬底加热至所述氟化铵膜与所述第一层反应的第二温度以选择性地蚀刻所述氧化硅。

公开(公告)号：US09653282B2

公开(公告)日：2017-05-16

申请号：US14445410

申请日：2014-07-29

Applicant: Applied Materials, Inc.

Inventor： Chun Yan ,  Xinyu Bao ,  Melitta Manyin Hon

IPC: H01L21/02

CPC classification number: H01L21/02046 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658

Abstract: A method for cleaning a substrate, such as a silicon substrate, a silicon-germanium substrate, or other silicon-containing substrate is disclosed. The method includes exposing the substrate to a first plasma configured to attack a sub-oxide on the substrate. The method also includes exposing the substrate to a second plasma configured to attack the native oxide on the substrate. The method further includes exposing the substrate to a gas containing at least one of molecular chlorine or a chlorine compound. The gas may be configured to remove at least some of the remaining native oxide and sub-oxide. After the cleaning process, the substrate may be further processed. Further processing steps may include, for example, an epitaxial growth process. An epitaxial growth process performed on a substrate cleaned according to the methods disclosed herein will exhibit few defects.

公开(公告)号：US10090147B2

公开(公告)日：2018-10-02

申请号：US15890117

申请日：2018-02-06

Applicant: Applied Materials, Inc.

Inventor： Chun Yan ,  Xinyu Bao ,  Melitta Manyin Hon ,  Hua Chung ,  Schubert S. Chu

IPC: H01L21/02 ,  H01L29/66

Abstract: Implementations described herein generally provide a method of processing a substrate. Specifically, the methods described are used for cleaning and etching source/drain regions on a silicon substrate in preparation for precise Group IV source/drain growth in semiconductor devices. Benefits of this disclosure include precise fin size control in devices, such as 10 nm FinFET devices, and increased overall device yield. The method of integrated clean and recess includes establishing a low pressure processing environment in the processing volume, and maintaining the low pressure processing environment while flowing a first gas over a substrate in a processing volume, depositing a salt on the substrate, heating the processing volume to greater than 90° C., purging the processing volume with a second inert gas, and recessing a source/drain region disposed on the substrate.