公开(公告)号：US10654147B2

公开(公告)日：2020-05-19

申请号：US15886574

申请日：2018-02-01

Applicant: Applied Materials, Inc.

Inventor： Wendell Glenn Boyd, Jr. ,  Jim Zhongyi He

IPC: B24B37/14 ,  B24B37/04 ,  B24B37/10 ,  H01L21/683 ,  H01L21/687 ,  C23C16/513 ,  H01J37/32

Abstract: Methods of polishing a patterned surface of an electrostatic chucking (ESC) substrate support to be used in plasma assisted or plasma enhanced semiconductor manufacturing chambers are provided herein. In particular, embodiments described herein, provide polishing methods that round and debur the edges of elevated features and remove dielectric material from the non-substrate contacting surfaces of a patterned substrate support to reduce defectivity associated therewith.

公开(公告)号：US11114327B2

公开(公告)日：2021-09-07

申请号：US16105731

申请日：2018-08-20

Applicant: Applied Materials, Inc.

Inventor： Wendell Glenn Boyd, Jr. ,  Jim Zhongyi He ,  Zhenwen Ding

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  H01L21/66 ,  C23C14/50

Abstract: Embodiments described herein provide methods and apparatus used to reduce or substantially eliminate undesirable scratches to the non-active surface of a substrate by monitoring and controlling the deflection of a substrate, and thus the contact force between the substrate and a substrate support, during substrate processing. In one embodiment a method for processing a substrate includes positioning the substrate on a patterned surface of a substrate support, where the substrate support is disposed in a processing volume of a processing chamber, applying a chucking voltage to a chucking electrode disposed in the substrate support; flowing a gas into a backside volume disposed between the substrate and the substrate support, monitoring a deflection of the substrate, and changing a chucking parameter based on the deflection of the substrate.

公开(公告)号：US11114326B2

公开(公告)日：2021-09-07

申请号：US16293437

申请日：2019-03-05

Applicant: Applied Materials, Inc.

Inventor： Wendell Glenn Boyd, Jr. ,  Jim Zhongyi He ,  Ramesh Gopalan ,  Robert T. Hirahara ,  Govinda Raj

IPC: H01L21/683 ,  H01J37/32

Abstract: Methods for chucking and de-chucking a substrate from an electrostatic chucking (ESC) substrate support to reduce scratches of the non-active surface of a substrate include simultaneously increasing a voltage applied to a chucking electrode embedded in the ESC substrate support and a backside gas pressure in a backside volume disposed between the substrate and the substrate support to chuck the substrate and reversing the process to de-chuck the substrate.

公开(公告)号：US09805914B2

公开(公告)日：2017-10-31

申请号：US14698556

申请日：2015-04-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Chun Yan ,  Jim Zhongyi He ,  Xinyu Bao ,  Teng-Fang Kuo ,  Zhenwen Ding ,  Adam Lane

IPC: B08B6/00 ,  C25F1/00 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32082 ,  H01J37/32862 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/02538 ,  H01L21/02661

Abstract: Methods for removing contamination from a surface disposed in a substrate processing system are provided herein. In some embodiments, a method for removing contaminants from a surface includes: providing a first process gas comprising a chlorine containing gas, a hydrogen containing gas, and an inert gas to a process chamber having the surface disposed within the process chamber; igniting the first process gas to form a plasma from the first process gas; and exposing the surface to the plasma to remove contaminants from the surface. In some embodiments, the surface is an exposed surface of a process chamber component. In some embodiments, the surface is a surface of a first layer disposed atop a substrate, such as a semiconductor wafer.

公开(公告)号：US09472416B2

公开(公告)日：2016-10-18

申请号：US14506058

申请日：2014-10-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Jim Zhongyi He ,  Ping Han Hsieh ,  Melitta Manyin Hon ,  Chun Yan ,  Xuefeng Hua

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02057 ,  H01L21/32132 ,  H01L21/32137

Abstract: Methods for surface interface engineering in semiconductor fabrication are provided herein. In some embodiments, a method of processing a substrate disposed atop a substrate support in a processing volume of a processing chamber includes: generating an ion species from an inductively coupled plasma formed within the processing volume of the processing chamber from a first process gas; exposing a first layer of the substrate to the ion species to form an ammonium fluoride (NH4F) film atop the first layer, wherein the first layer comprises silicon oxide; and heating the substrate to a second temperature at which the ammonium fluoride film reacts with the first layer to selectively etch the silicon oxide.

Abstract translation: 本文提供半导体制造中的表面界面工程方法。 在一些实施例中，处理设置在处理室的处理体积中的衬底支撑件顶部的衬底的方法包括：从处理室的处理容积中形成的电感耦合等离子体从第一工艺气体产生离子物质; 将所述衬底的第一层暴露于所述离子种类以在所述第一层顶部形成氟化铵（NH 4 F）膜，其中所述第一层包含氧化硅; 以及将所述衬底加热至所述氟化铵膜与所述第一层反应的第二温度以选择性地蚀刻所述氧化硅。