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24 条记录 (耗时 0.018 秒)

    Method of uniform channel formation
    1.
    发明授权
    Method of uniform channel formation 有权

    公开(公告)号：US10243063B2

    公开(公告)日：2019-03-26

    申请号：US15617613

    申请日：2017-06-08

    申请人： Applied Materials, Inc.

    发明人： Chun Yan ,  Xinyu Bao

    IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  H01L29/04

    摘要： Embodiments described herein generally provide a method and apparatus to form semiconductor devices. Specifically, embodiments describe an apparatus and methods of forming channels in sub-5 nm node FinFETS. The method provides for various processing steps to deposit a dielectric layer over a substrate. The method continues by etching a trench in the dielectric layer, depositing a silicon layer within the trench, depositing a buffer layer on top of the silicon layer in the trench, removing a portion of the buffer layer to form a planar surface, etching the buffer layer into a v-shape, and depositing a channel layer on top of the v-shaped buffer layer. The v-shaped buffer layer advantageously negates facet formation and provides for an InGaAs fin-channel with uniform distribution of indium and gallium throughout the channel.

    Silicon-containing substrate cleaning procedure
    6.
    发明授权
    Silicon-containing substrate cleaning procedure 有权

    公开(公告)号：US09653282B2

    公开(公告)日：2017-05-16

    申请号：US14445410

    申请日：2014-07-29

    申请人： Applied Materials, Inc.

    发明人： Chun Yan ,  Xinyu Bao ,  Melitta Manyin Hon

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02046 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658

    摘要： A method for cleaning a substrate, such as a silicon substrate, a silicon-germanium substrate, or other silicon-containing substrate is disclosed. The method includes exposing the substrate to a first plasma configured to attack a sub-oxide on the substrate. The method also includes exposing the substrate to a second plasma configured to attack the native oxide on the substrate. The method further includes exposing the substrate to a gas containing at least one of molecular chlorine or a chlorine compound. The gas may be configured to remove at least some of the remaining native oxide and sub-oxide. After the cleaning process, the substrate may be further processed. Further processing steps may include, for example, an epitaxial growth process. An epitaxial growth process performed on a substrate cleaned according to the methods disclosed herein will exhibit few defects.

    Method for wafer outgassing control
    7.
    发明授权
    Method for wafer outgassing control 有权

    公开(公告)号：US10236190B2

    公开(公告)日：2019-03-19

    申请号：US15588641

    申请日：2017-05-06

    申请人： Applied Materials, Inc.

    发明人： Chun Yan ,  Xinyu Bao

    IPC分类号： H01L21/302 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/306

    摘要： Embodiments disclosed herein generally relate to methods for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a III-V epitaxial growth process or an etch clean process, and prior to additional processing. An oxygen containing gas is flowed to a substrate in a load lock chamber, and subsequently a non-reactive gas is flowed to the substrate in the load lock chamber. As such, hazardous gases and outgassing residuals are decreased and/or removed from the substrate such that further processing may be performed.

    Integrated system and method for source/drain engineering
    8.
    发明授权
    Integrated system and method for source/drain engineering 有权

    公开(公告)号：US10090147B2

    公开(公告)日：2018-10-02

    申请号：US15890117

    申请日：2018-02-06

    申请人： Applied Materials, Inc.

    发明人： Chun Yan ,  Xinyu Bao ,  Melitta Manyin Hon ,  Hua Chung ,  Schubert S. Chu

    IPC分类号： H01L21/02 ,  H01L29/66

    摘要： Implementations described herein generally provide a method of processing a substrate. Specifically, the methods described are used for cleaning and etching source/drain regions on a silicon substrate in preparation for precise Group IV source/drain growth in semiconductor devices. Benefits of this disclosure include precise fin size control in devices, such as 10 nm FinFET devices, and increased overall device yield. The method of integrated clean and recess includes establishing a low pressure processing environment in the processing volume, and maintaining the low pressure processing environment while flowing a first gas over a substrate in a processing volume, depositing a salt on the substrate, heating the processing volume to greater than 90° C., purging the processing volume with a second inert gas, and recessing a source/drain region disposed on the substrate.

    Integrated method for wafer outgassing reduction
    9.
    发明授权
    Integrated method for wafer outgassing reduction 有权

    公开(公告)号：US10043667B2

    公开(公告)日：2018-08-07

    申请号：US15418190

    申请日：2017-01-27

    申请人： Applied Materials, Inc.

    发明人： Chun Yan ,  Xinyu Bao ,  Hua Chung ,  Schubert S. Chu

    IPC分类号： H01L21/02 ,  H01L29/78 ,  H01L29/08 ,  C23C14/58 ,  H01L21/20 ,  C23C14/02 ,  H01L21/768 ,  H01L21/203

    摘要： Implementations disclosed herein relate to methods for controlling substrate outgassing. In one implementation, the method includes removing oxides from an exposed surface of a substrate in an inductively coupled plasma chamber, forming an epitaxial layer on the exposed surface of the substrate in an epitaxial deposition chamber, and performing an outgassing control of the substrate by subjecting the substrate to a first plasma formed from a first etch precursor in the inductively coupled plasma chamber at a first chamber pressure, wherein the first etch precursor comprises a hydrogen-containing precursor, a chlorine-containing precursor, and an inert gas, and subjecting the substrate to a second plasma formed from a second etch precursor in the inductively coupled plasma chamber at a second chamber pressure that is higher than the first chamber pressure, wherein the second etch precursor comprises a hydrogen-containing precursor and an inert gas.