公开(公告)号：US20230223268A1

公开(公告)日：2023-07-13

申请号：US17572397

申请日：2022-01-10

Applicant: Applied Materials, Inc.

Inventor： Sean KANG ,  Olivier LUERE ,  Kenji TAKESHITA ,  Sanghyuk CHOI ,  Mengnan ZOU ,  Zihao DING

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01L21/02126 ,  H01L21/31116

Abstract: Embodiments of the present disclosure generally relate to a method for etching a film stack with high selectivity and low etch recipe transition periods. In one embodiment, a method for etching a film stack having stacked pairs of oxide and nitride layers is described. The method includes transferring a substrate having a film stack formed thereon into a processing chamber, providing a first bias voltage to the substrate, etching an oxide layer of the film stack while providing the first bias voltage to the substrate, providing a second bias voltage to the substrate, the second bias voltage greater than the first bias voltage, and etching a nitride layer of the film stack while providing the second bias voltage to the substrate.