Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using an in-situ wafer temperature optical probe
    1.
    发明申请
    Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using an in-situ wafer temperature optical probe 有权
    基于使用原位晶片温度光学探针的连续晶片温度测量,校正等离子体反应器中的晶片温度漂移

    公开(公告)号:US20020048311A1

    公开(公告)日:2002-04-25

    申请号:US10013183

    申请日:2001-12-07

    摘要: The invention solves the problem of continuously monitoring wafer temperature during processing using an optical or fluoro-optical temperature sensor including an optical fiber having an end next to and facing the backside of the wafer. This optical fiber is accommodated without disturbing plasma processing by providing in one of the wafer lift pins an axial void through which the optical fiber passes. The end of the fiber facing the wafer backside is coincident with the end of the hollow lift pin. The other end is coupled via an nullexternalnull optical fiber to temperature probe electronics external of the reactor chamber. The invention uses direct wafer temperature measurements with a test wafer to establish a data base of wafer temperature behavior as a function of coolant pressure and a data base of wafer temperature behavior as a function of wafer support or nullpucknull temperature. These data bases are then employed during processing of a production wafer to control coolant pressure in such a manner as to minimize wafer temperature deviation from the desired temperature.

    摘要翻译: 本发明解决了使用包括具有接近于晶片背面的光纤的光纤或氟光温度传感器在处理期间连续监测晶片温度的问题。 通过在一个晶片提升销中提供光纤通过的轴向空隙来容纳该光纤,而不会干扰等离子体处理。 面向晶片背面的纤维的端部与中空提升销的端部重合。 另一端通过“外部”光纤耦合到反应室外的温度探针电子设备。 本发明使用测试晶片直接进行晶片温度测量,以建立作为冷却剂压力的函数的晶片温度特性的数据库和作为晶片支撑或“固定”温度的函数的晶片温度特性的数据库。 然后在生产晶片的处理期间采用这些数据库,以便以最小化晶片温度偏离所需温度的方式来控制冷却剂压力。

    Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply

    公开(公告)号:US20030192644A1

    公开(公告)日:2003-10-16

    申请号:US10442424

    申请日:2003-05-20

    IPC分类号: H01L021/306 C23C016/00

    CPC分类号: H01J37/321

    摘要: Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of wedge-shaped induction coils are distributed around a circle. The sides of adjacent coils are parallel, thereby enhancing the radial uniformity of the magnetic field produced by the array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.

    Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply
    3.
    发明申请
    Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply 失效
    分布式电感耦合等离子体源和电路,用于将感应线圈耦合到RF电源

    公开(公告)号:US20010054383A1

    公开(公告)日:2001-12-27

    申请号:US09929902

    申请日:2001-08-14

    IPC分类号: H01L021/3065

    CPC分类号: H01J37/321

    摘要: Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of wedge-shaped induction coils are distributed around a circle. The sides of adjacent coils are parallel, thereby enhancing the radial uniformity of the magnetic field produced by the array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.

    摘要翻译: 用于在半导体处理室中将电力感应耦合到等离子体的装置和方法。 在第一方面,楔形感应线圈阵列分布在一个圆周围。 相邻线圈的侧面是平行的,从而增强阵列产生的磁场的径向均匀性。 在第二方面,通过将每个感应线圈连接到电源使得感应线圈和等离子体之间的静电耦合最小化,使得最接近等离子体的线圈的线的转弯接近电接地电位。 在一个实施例中,一个线圈的热端连接到RF电源的不平衡输出端,另一个线圈的热端通过电容器连接到电接地,电容器以RF的频率与后一个线圈谐振 电源。