Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
    1.
    发明申请
    Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor 失效
    用于在磁场增强等离子体反应器中成形磁场的方法和装置

    公开(公告)号:US20040182516A1

    公开(公告)日:2004-09-23

    申请号:US10778933

    申请日:2004-02-13

    IPC分类号: H01L021/306

    摘要: A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.

    摘要翻译: 提供了提供对磁场的更大控制的磁场发生器。 磁场发生器具有多个重叠的主磁线圈段,用于形成大致平行于支撑构件的顶表面的磁场。 在其他实施例中,副磁性线圈部分围绕主电磁线圈部分对称放置。

    Shield or ring surrounding semiconductor workpiece in plasma chamber
    3.
    发明申请
    Shield or ring surrounding semiconductor workpiece in plasma chamber 有权
    在等离子体室内围绕半导体工件的屏蔽或环

    公开(公告)号:US20020066531A1

    公开(公告)日:2002-06-06

    申请号:US09947194

    申请日:2001-09-04

    IPC分类号: C23F001/02

    摘要: A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135null. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases. In a third aspect, the dielectric shield is thin enough to couple substantial power from the cathode to the plasma, thereby improving spatial uniformity of the plasma process near the perimeter of the workpiece. In a fourth aspect, azimuthal non-uniformities in process performance can be ameliorated by corresponding azimuthal variations in the dimensions of the elevated collar and/or the dielectric shield surrounding the workpiece.

    摘要翻译: 围绕等离子体室中的半导体工件的环或环。 根据一个方面,所述环具有提升的套环部分,其内表面以与工件的平面成钝角定向,该角度优选为135°。 这种角度取向导致离子轰击提升的套环的内表面沿更平行于工件的平面的方向散射,从而减少工件周边处的任何介电屏蔽的侵蚀,并且改善等离子体中的空间不均匀性 由于这种周边附近的任何过量的离子密度而产生的过程。 在第二方面,工件被电介质屏蔽围绕,屏蔽被非介电环覆盖,该绝缘环保护介电屏蔽免受过程气体的反应或腐蚀。 在第三方面中,电介质屏蔽体足够薄以将来自阴极的实质功率耦合到等离子体,从而改善靠近工件周边的等离子体工艺的空间均匀性。 在第四方面,方法性能的方位不均匀性可以通过围绕工件的高架轴环和/或介电屏蔽的尺寸的相应的方位角变化来改善。

    Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber
    4.
    发明申请
    Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber 失效
    用于控制等离子体增强半导体晶片处理室中的磁场强度的方法和装置

    公开(公告)号:US20030085000A1

    公开(公告)日:2003-05-08

    申请号:US10146443

    申请日:2002-05-14

    IPC分类号: C23F001/00 C23C016/00

    CPC分类号: H01J37/32623 H01J37/3266

    摘要: A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.

    摘要翻译: 用于产生加速等离子体形成的磁场的磁场发生器放置在半导体衬底处理系统的反应室附近。 磁场发生器具有四个主要的磁线圈部分,用于产生几乎平行于反应室中的支撑基座的顶表面的磁场和与主电磁线圈部分大致同轴放置的四个子磁线圈段,以产生磁场 的方向与由主电磁线圈段产生的磁场的方向相反。 在磁场发生器中,相反极性的磁场在施加到主磁亚极部分和次磁线圈部分的相反方向的电流时彼此叠加。

    Adjusting DC bias voltage in plasma chamber
    5.
    发明申请
    Adjusting DC bias voltage in plasma chamber 失效
    调整等离子体室内的直流偏置电压

    公开(公告)号:US20010014540A1

    公开(公告)日:2001-08-16

    申请号:US09841804

    申请日:2001-04-24

    IPC分类号: H01L021/302 H01L021/461

    摘要: A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.

    摘要翻译: 一种调整用于制造半导体器件的等离子体室中的阴极直流偏压的方法。 电介质屏蔽件位于等离子体和室的电接地部件的选定部分之间,例如电接地室壁。 通过控制一个或多个以下参数来调节阴极直流偏压:(1)腔室壁的表面积或由介电屏蔽件阻挡的其它接地部件; (2)电介质的厚度; (3)屏蔽和室壁之间的间隙; 和(4)介电材料的介电常数。 在装置方面,本发明是用于制造半导体器件的等离子体室,其具有带有多个弯曲通道的排气挡板。 每个通道足够长和弯曲,使得室内的等离子体的任何部分不能延伸超过通道的出口。 通过阻止等离子体到达排气泵,排气挡板减少排气泵部件上不想要的颗粒的沉积。 排气挡板还通过减少将RF功率耦合到等离子体的电接地室壁的有效表面积来减小阴极DC偏压。

    Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply

    公开(公告)号:US20030192644A1

    公开(公告)日:2003-10-16

    申请号:US10442424

    申请日:2003-05-20

    IPC分类号: H01L021/306 C23C016/00

    CPC分类号: H01J37/321

    摘要: Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of wedge-shaped induction coils are distributed around a circle. The sides of adjacent coils are parallel, thereby enhancing the radial uniformity of the magnetic field produced by the array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.

    Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply
    10.
    发明申请
    Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply 失效
    分布式电感耦合等离子体源和电路,用于将感应线圈耦合到RF电源

    公开(公告)号:US20010054383A1

    公开(公告)日:2001-12-27

    申请号:US09929902

    申请日:2001-08-14

    IPC分类号: H01L021/3065

    CPC分类号: H01J37/321

    摘要: Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of wedge-shaped induction coils are distributed around a circle. The sides of adjacent coils are parallel, thereby enhancing the radial uniformity of the magnetic field produced by the array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.

    摘要翻译: 用于在半导体处理室中将电力感应耦合到等离子体的装置和方法。 在第一方面,楔形感应线圈阵列分布在一个圆周围。 相邻线圈的侧面是平行的,从而增强阵列产生的磁场的径向均匀性。 在第二方面,通过将每个感应线圈连接到电源使得感应线圈和等离子体之间的静电耦合最小化,使得最接近等离子体的线圈的线的转弯接近电接地电位。 在一个实施例中,一个线圈的热端连接到RF电源的不平衡输出端,另一个线圈的热端通过电容器连接到电接地,电容器以RF的频率与后一个线圈谐振 电源。