公开(公告)号：US20030037880A1

公开(公告)日：2003-02-27

申请号：US10253496

申请日：2002-09-24

申请人： Applied Materials, Inc.

发明人： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Bryan Y. Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC分类号： C23F001/00 ,  C23C016/00

CPC分类号： H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

摘要翻译： 一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极 耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。 较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

公开(公告)号：US20010032591A1

公开(公告)日：2001-10-25

申请号：US09775295

申请日：2001-01-31

申请人： Applied Materials, Inc.

发明人： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC分类号： H01L021/3065

CPC分类号： H01J37/32834 ,  C23C16/4412 ,  H01J37/32623 ,  H01J37/3266

摘要： The invention is a plasma reactor employing a chamber having a process gas inlet and enclosing a plasma process region. The reactor includes a workpiece support pedestal within the chamber capable of supporting a workpiece at a processing location interfacing with the plasma process region, the support pedestal and the chamber defining an annulus therebetween to permit gas to be evacuated therethrough from the plasma process region. One aspect of the invention includes a ring horseshoe magnet adjacent and about one side of the annulus, the magnet being spaced from the plasma processing location by a spacing substantially greater than the smallest distance across the annulus. The invention further includes the magnet defining opposite poles which are substantially closer together than the spacing of the magnet from the processing location, the magnet being oriented to provide its maximum magnetic flux across the annulus and a minimum of the flux at the plasma processing location.

摘要翻译： 本发明是采用具有工艺气体入口并包围等离子体处理区域的室的等离子体反应器。 反应器包括在腔室内的工件支撑基座，其能够在与等离子体处理区域相接合的处理位置处支撑工件，支撑基座和腔室在其间限定环形空间，以允许气体从等离子体处理区域排出。 本发明的一个方面包括环形马蹄形磁体，其邻近和围绕环的一侧，磁体与等离子体处理位置间隔开一个明显大于穿过环形空间的最小距离的间隔。 本发明还包括磁体，其限定相对于磁体与处理位置的间隔大致更靠近在一起的磁体，磁体被定向成提供跨越环的最大磁通量和等离子体处理位置处的最小磁通量。

公开(公告)号：US20040065645A1

公开(公告)日：2004-04-08

申请号：US10267711

申请日：2002-10-08

申请人： Applied Materials, Inc.

发明人： Michael Welch ,  Paul E. Luscher ,  Siamak Salimian ,  Rolf Guenther ,  Zhong Qiang Hua ,  Son Phi ,  Peter Loewenhardt

IPC分类号： B23K010/00 ,  H05B001/02

CPC分类号： H01L21/67248 ,  H01J37/32458 ,  H01J37/32522 ,  H01L21/67109

摘要： The temperature of a plasma chamber of a semiconductor fabrication tool is maintained substantially constant utilizing a variety of techniques, separately or in combination. One technique is to provide the exterior surface of the plasma chamber dome with a plurality of fins projecting into high velocity regions of an overlying airflow in order to dissipate heat from the chamber. Ducting defined by cover overlying the exposed exterior surface of the dome may also feature projecting lips or an airfoil to place high velocity components of the airflow into contact within the exterior dome surface and the fins. Other techniques include employing a high speed fan to control airflow circulation, and the use of temperature sensors in communication the fan through a processor to control fan speed and thereby regulate chamber temperature.

公开(公告)号：US20020048311A1

公开(公告)日：2002-04-25

申请号：US10013183

申请日：2001-12-07

申请人： Applied Materials, Inc.

发明人： Hamid Norrbakhsh ,  Mike Welch ,  Paul E. Luscher ,  Siamak Salimian ,  Brad Mays

IPC分类号： G01K001/14 ,  G01K011/20 ,  G01K013/00

CPC分类号： H01L21/67248 ,  C30B25/16 ,  C30B31/18

摘要： The invention solves the problem of continuously monitoring wafer temperature during processing using an optical or fluoro-optical temperature sensor including an optical fiber having an end next to and facing the backside of the wafer. This optical fiber is accommodated without disturbing plasma processing by providing in one of the wafer lift pins an axial void through which the optical fiber passes. The end of the fiber facing the wafer backside is coincident with the end of the hollow lift pin. The other end is coupled via an nullexternalnull optical fiber to temperature probe electronics external of the reactor chamber. The invention uses direct wafer temperature measurements with a test wafer to establish a data base of wafer temperature behavior as a function of coolant pressure and a data base of wafer temperature behavior as a function of wafer support or nullpucknull temperature. These data bases are then employed during processing of a production wafer to control coolant pressure in such a manner as to minimize wafer temperature deviation from the desired temperature.

摘要翻译： 本发明解决了使用包括具有接近于晶片背面的光纤的光纤或氟光温度传感器在处理期间连续监测晶片温度的问题。 通过在一个晶片提升销中提供光纤通过的轴向空隙来容纳该光纤，而不会干扰等离子体处理。 面向晶片背面的纤维的端部与中空提升销的端部重合。 另一端通过“外部”光纤耦合到反应室外的温度探针电子设备。 本发明使用测试晶片直接进行晶片温度测量，以建立作为冷却剂压力的函数的晶片温度特性的数据库和作为晶片支撑或“固定”温度的函数的晶片温度特性的数据库。 然后在生产晶片的处理期间采用这些数据库，以便以最小化晶片温度偏离所需温度的方式来控制冷却剂压力。

公开(公告)号：US20010014540A1

公开(公告)日：2001-08-16

申请号：US09841804

申请日：2001-04-24

申请人： Applied Materials, Inc.

发明人： Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

IPC分类号： H01L021/302 ,  H01L021/461

CPC分类号： H01J37/32834 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32706

摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.

摘要翻译： 一种调整用于制造半导体器件的等离子体室中的阴极直流偏压的方法。 电介质屏蔽件位于等离子体和室的电接地部件的选定部分之间，例如电接地室壁。 通过控制一个或多个以下参数来调节阴极直流偏压：（1）腔室壁的表面积或由介电屏蔽件阻挡的其它接地部件; （2）电介质的厚度; （3）屏蔽和室壁之间的间隙; 和（4）介电材料的介电常数。 在装置方面，本发明是用于制造半导体器件的等离子体室，其具有带有多个弯曲通道的排气挡板。 每个通道足够长和弯曲，使得室内的等离子体的任何部分不能延伸超过通道的出口。 通过阻止等离子体到达排气泵，排气挡板减少排气泵部件上不想要的颗粒的沉积。 排气挡板还通过减少将RF功率耦合到等离子体的电接地室壁的有效表面积来减小阴极DC偏压。

公开(公告)号：US20040083978A1

公开(公告)日：2004-05-06

申请号：US10602491

申请日：2003-06-23

申请人： Applied Materials, Inc.

发明人： Michael D. Welch ,  Homgqing Shan ,  Paul E. Luscher ,  Evans Y Lee ,  James D. Carducci ,  Siamak Salimian

IPC分类号： H01L021/306 ,  C23C016/00

CPC分类号： H01L21/67011 ,  H01J37/32458 ,  H01J2237/186 ,  Y10S156/916 ,  Y10S414/139

摘要： In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.

摘要翻译： 在基板真空处理室中，第二内狭缝通道门装置和方法，用于在室的外部补充普通狭缝阀及其门。 内部狭缝通道门在真空处理室中阻挡基板处理位置处或邻近的狭缝通道，以防止加工副产物沉积在狭缝通道的内表面上方超过狭缝通道门并改善处理中的等离子体的均匀性 通过消除与衬底处理位置相邻的大空腔，等离子体将在其中膨胀。 内狭缝通道门的构造和定位方式是避免从第二狭缝阀门的打开和关闭运动产生颗粒，因为它在其运动期间不会摩擦室内的任何元件，并且内部狭缝通道 门与相邻的件之间具有预定的间隙定位，并且门配置包括斜面以进一步减少颗粒产生的机会，即使在门及其相邻表面上沉积了工艺副产物。

公开(公告)号：US20030038111A1

公开(公告)日：2003-02-27

申请号：US10254969

申请日：2002-09-24

申请人： Applied Materials, Inc.

发明人： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Bryan Y. Pu ,  Hongqing Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC分类号： B44C001/22 ,  G01R031/00 ,  C03C025/68

CPC分类号： H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

公开(公告)号：US20020183977A1

公开(公告)日：2002-12-05

申请号：US10081088

申请日：2002-02-20

申请人： Applied Materials, Inc.

发明人： Zhifeng Sui ,  Paul E. Luscher ,  Nils Johansson ,  Michael D. Welch

IPC分类号： G06F011/00

CPC分类号： H01L21/67253 ,  H01J37/32935 ,  H01J37/32963

摘要： In an endpoint detection method for a process performed in a substrate processing chamber with an energized gas, a process variable of the process is detected. The process variable comprising at least one of (i) a radiation emitted by the energized gas, (ii) a radiation reflected from a substrate in the chamber, (iii) a reflected power level of the energized gas, and (iv) a temperature in the chamber. An endpoint signal is issued when the process variable is indicative of an endpoint of the process. A process parameter of the process is also detected, the process parameter comprising at least one of (i) a source power, (ii) an RF forward power, reflected power, or match components, (iii) an RF peak-to-peak voltage, current or phase, (iv) a DC bias level, (v) a chamber pressure or throttle valve position, (vi) a gas composition or flow rate, (vii) a substrate temperature or composition, (viii) a temperature of a chamber component or wall, and (ix) a magnetic confinement level or magnet position. The endpoint signal is determined to be true or false by evaluating the process parameter.

摘要翻译： 在具有通电气体的基板处理室中执行的处理的端点检测方法中，检测该处理的过程变量。 所述过程变量包括以下中的至少一个：（i）由所述通电气体发射的辐射，（ii）从所述室中的衬底反射的辐射，（iii）所述通电气体的反射功率水平，以及（iv） 在房间里 当过程变量指示过程的终点时，发出端点信号。 还检测该过程的过程参数，该过程参数包括以下中的至少一个：（i）源功率，（ii）RF正向功率，反射功率或匹配分量，（iii）RF峰 - 峰 电压，电流或相位，（iv）DC偏置电平，（v）腔室压力或节流阀位置，（vi）气体组成或流速，（vii）衬底温度或组成，（viii） 腔室部件或壁，以及（ix）磁限制水平或磁体位置。 通过评估过程参数将端点信号确定为真或假。

公开(公告)号：US20010032590A1

公开(公告)日：2001-10-25

申请号：US09775173

申请日：2001-01-31

申请人： Applied Materials, Inc.

发明人： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC分类号： H01L021/3065 ,  C23C016/00

CPC分类号： H01J37/32834 ,  C23C16/4412 ,  H01J37/32623 ,  H01J37/3266

摘要： The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.

摘要翻译： 本发明涉及一种使用包括工艺气体入口并限定等离子体处理区域的室外壳的等离子体反应器。 能够在加工位置处支撑工件的工件支撑基座面对等离子体处理区域，基座和外壳彼此间隔开，以在它们之间限定其间具有面向壁的泵送环形空间，以便允许气体从其中排出 过程区域。 一对相对的等离子体限制磁极在环形空间的相对的壁之一内，相对的磁极彼此轴向移位。 磁极在加工位置下方轴向移动一定距离，该距离超过环形面的相对壁之间的间隔的相当大的一部分。