公开(公告)号：US20030037880A1

公开(公告)日：2003-02-27

申请号：US10253496

申请日：2002-09-24

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Bryan Y. Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC: C23F001/00 ,  C23C016/00

CPC classification number: H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

Abstract: A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

Abstract translation: 一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极 耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。 较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

公开(公告)号：US20020069970A1

公开(公告)日：2002-06-13

申请号：US10055310

申请日：2002-01-22

Applicant: Applied Materials, Inc.

Inventor： Hamid Noorbakhsh ,  Siamak Salimian ,  Paul Luscher ,  James D. Carducci ,  Evans Lee ,  Kaushik Vaidya ,  Hongqing Shan ,  Michael D. Welch

IPC: C23F001/02 ,  C23C016/00

CPC classification number: C23C16/45563 ,  C23C16/4401 ,  C23C16/4411 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32633 ,  H01J2237/2001

Abstract: A thermally controlled chamber liner comprising a passage having an inlet and outlet adapted to flow a fluid through the one or more fluid passages formed at least partially therein. The chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. The thermally controlled chamber liner maintains a predetermined temperature by running fluid from a temperature controlled, fluid source through the fluid passages. By maintaining a predetermined temperature, deposition of films on the chamber liner is discouraged and particulate generation due to stress cracking of deposited films is minimized.

Abstract translation: 一种热控腔室衬套，其包括具有入口和出口的通道，其适于使流体流过至少部分地形成在其中的一个或多个流体通道。 腔室衬套可以包括第一衬垫，第二衬垫或第一衬垫和第二衬垫两者。 热控腔室衬里通过将流体从温度受控的流体源流过流体通道来维持预定的温度。 通过保持预定的温度，阻止膜在室衬里上的沉积，并且由于沉积膜的应力开裂引起的颗粒的产生被最小化。

公开(公告)号：US20040065645A1

公开(公告)日：2004-04-08

申请号：US10267711

申请日：2002-10-08

Applicant: Applied Materials, Inc.

Inventor： Michael Welch ,  Paul E. Luscher ,  Siamak Salimian ,  Rolf Guenther ,  Zhong Qiang Hua ,  Son Phi ,  Peter Loewenhardt

IPC: B23K010/00 ,  H05B001/02

CPC classification number: H01L21/67248 ,  H01J37/32458 ,  H01J37/32522 ,  H01L21/67109

Abstract: The temperature of a plasma chamber of a semiconductor fabrication tool is maintained substantially constant utilizing a variety of techniques, separately or in combination. One technique is to provide the exterior surface of the plasma chamber dome with a plurality of fins projecting into high velocity regions of an overlying airflow in order to dissipate heat from the chamber. Ducting defined by cover overlying the exposed exterior surface of the dome may also feature projecting lips or an airfoil to place high velocity components of the airflow into contact within the exterior dome surface and the fins. Other techniques include employing a high speed fan to control airflow circulation, and the use of temperature sensors in communication the fan through a processor to control fan speed and thereby regulate chamber temperature.

公开(公告)号：US20020048311A1

公开(公告)日：2002-04-25

申请号：US10013183

申请日：2001-12-07

Applicant: Applied Materials, Inc.

Inventor： Hamid Norrbakhsh ,  Mike Welch ,  Paul E. Luscher ,  Siamak Salimian ,  Brad Mays

IPC: G01K001/14 ,  G01K011/20 ,  G01K013/00

CPC classification number: H01L21/67248 ,  C30B25/16 ,  C30B31/18

Abstract: The invention solves the problem of continuously monitoring wafer temperature during processing using an optical or fluoro-optical temperature sensor including an optical fiber having an end next to and facing the backside of the wafer. This optical fiber is accommodated without disturbing plasma processing by providing in one of the wafer lift pins an axial void through which the optical fiber passes. The end of the fiber facing the wafer backside is coincident with the end of the hollow lift pin. The other end is coupled via an nullexternalnull optical fiber to temperature probe electronics external of the reactor chamber. The invention uses direct wafer temperature measurements with a test wafer to establish a data base of wafer temperature behavior as a function of coolant pressure and a data base of wafer temperature behavior as a function of wafer support or nullpucknull temperature. These data bases are then employed during processing of a production wafer to control coolant pressure in such a manner as to minimize wafer temperature deviation from the desired temperature.

Abstract translation: 本发明解决了使用包括具有接近于晶片背面的光纤的光纤或氟光温度传感器在处理期间连续监测晶片温度的问题。 通过在一个晶片提升销中提供光纤通过的轴向空隙来容纳该光纤，而不会干扰等离子体处理。 面向晶片背面的纤维的端部与中空提升销的端部重合。 另一端通过“外部”光纤耦合到反应室外的温度探针电子设备。 本发明使用测试晶片直接进行晶片温度测量，以建立作为冷却剂压力的函数的晶片温度特性的数据库和作为晶片支撑或“固定”温度的函数的晶片温度特性的数据库。 然后在生产晶片的处理期间采用这些数据库，以便以最小化晶片温度偏离所需温度的方式来控制冷却剂压力。

公开(公告)号：US20020096114A1

公开(公告)日：2002-07-25

申请号：US09767319

申请日：2001-01-22

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Siamak Salimian ,  Michael D. Welch

IPC: C23F001/02

CPC classification number: H01L21/67167 ,  C23C14/56 ,  C23C16/54 ,  H01L21/67184 ,  H01L21/6719

Abstract: Apparatus and methods provide a module defining processing regions in which substrates can be processed. One embodiment of the module has a serial arrangement of processing regions, where a first processing region is disposed at a front end portion of the module and a second processing region is defined at a back end portion of the module. A substrate transfer passageway fluidly communicates the first and second processing regions.

Abstract translation: 装置和方法提供了限定可以处理衬底的处理区域的模块。 模块的一个实施例具有处理区域的串行布置，其中第一处理区域设置在模块的前端部分，并且在模块的后端部分限定第二处理区域。 衬底传送通道使第一和第二处理区域流体连通。

公开(公告)号：US20010032591A1

公开(公告)日：2001-10-25

申请号：US09775295

申请日：2001-01-31

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC: H01L021/3065

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  H01J37/32623 ,  H01J37/3266

Abstract: The invention is a plasma reactor employing a chamber having a process gas inlet and enclosing a plasma process region. The reactor includes a workpiece support pedestal within the chamber capable of supporting a workpiece at a processing location interfacing with the plasma process region, the support pedestal and the chamber defining an annulus therebetween to permit gas to be evacuated therethrough from the plasma process region. One aspect of the invention includes a ring horseshoe magnet adjacent and about one side of the annulus, the magnet being spaced from the plasma processing location by a spacing substantially greater than the smallest distance across the annulus. The invention further includes the magnet defining opposite poles which are substantially closer together than the spacing of the magnet from the processing location, the magnet being oriented to provide its maximum magnetic flux across the annulus and a minimum of the flux at the plasma processing location.

Abstract translation: 本发明是采用具有工艺气体入口并包围等离子体处理区域的室的等离子体反应器。 反应器包括在腔室内的工件支撑基座，其能够在与等离子体处理区域相接合的处理位置处支撑工件，支撑基座和腔室在其间限定环形空间，以允许气体从等离子体处理区域排出。 本发明的一个方面包括环形马蹄形磁体，其邻近和围绕环的一侧，磁体与等离子体处理位置间隔开一个明显大于穿过环形空间的最小距离的间隔。 本发明还包括磁体，其限定相对于磁体与处理位置的间隔大致更靠近在一起的磁体，磁体被定向成提供跨越环的最大磁通量和等离子体处理位置处的最小磁通量。

公开(公告)号：US20040241342A1

公开(公告)日：2004-12-02

申请号：US10446531

申请日：2003-05-27

Applicant: Applied Materials, Inc.

Inventor： M. Ziaul Karim ,  Farhad K. Moghadam ,  Siamak Salimian

IPC: C23C014/00 ,  C23C014/32

CPC classification number: H01L21/02164 ,  C23C16/045 ,  C23C16/402 ,  C23C16/507 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76227

Abstract: Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an overall ion density of at least 1011 ions/cm3. The process gas includes H2, a silicon source, and an oxidizing gas reactant, and deposition into the gap is achieved using a process that has simultaneous deposition and sputtering components. The probability of forming a void is reduced by ensuring that the plasma has a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.

Abstract translation: 提供了用于在衬底上的间隙中沉积氧化硅的方法和系统。 通过将处理气体流入处理室并形成总离子密度为至少10 11个/ cm 3的等离子体而形成氧化硅。 工艺气体包括H 2，硅源和氧化气体反应物，并且使用具有同时沉积和溅射组分的工艺来实现沉积到间隙中。 通过确保等离子体具有比具有多于一个氧原子的离子的密度更大的具有单个氧原子的离子的密度来降低形成空穴的概率。

公开(公告)号：US20040083978A1

公开(公告)日：2004-05-06

申请号：US10602491

申请日：2003-06-23

Applicant: Applied Materials, Inc.

Inventor： Michael D. Welch ,  Homgqing Shan ,  Paul E. Luscher ,  Evans Y Lee ,  James D. Carducci ,  Siamak Salimian

IPC: H01L021/306 ,  C23C016/00

CPC classification number: H01L21/67011 ,  H01J37/32458 ,  H01J2237/186 ,  Y10S156/916 ,  Y10S414/139

Abstract: In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.

Abstract translation: 在基板真空处理室中，第二内狭缝通道门装置和方法，用于在室的外部补充普通狭缝阀及其门。 内部狭缝通道门在真空处理室中阻挡基板处理位置处或邻近的狭缝通道，以防止加工副产物沉积在狭缝通道的内表面上方超过狭缝通道门并改善处理中的等离子体的均匀性 通过消除与衬底处理位置相邻的大空腔，等离子体将在其中膨胀。 内狭缝通道门的构造和定位方式是避免从第二狭缝阀门的打开和关闭运动产生颗粒，因为它在其运动期间不会摩擦室内的任何元件，并且内部狭缝通道 门与相邻的件之间具有预定的间隙定位，并且门配置包括斜面以进一步减少颗粒产生的机会，即使在门及其相邻表面上沉积了工艺副产物。

公开(公告)号：US20030038111A1

公开(公告)日：2003-02-27

申请号：US10254969

申请日：2002-09-24

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Bryan Y. Pu ,  Hongqing Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC: B44C001/22 ,  G01R031/00 ,  C03C025/68

CPC classification number: H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

Abstract: A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

公开(公告)号：US20010032590A1

公开(公告)日：2001-10-25

申请号：US09775173

申请日：2001-01-31

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC: H01L021/3065 ,  C23C016/00

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  H01J37/32623 ,  H01J37/3266

Abstract: The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.

Abstract translation: 本发明涉及一种使用包括工艺气体入口并限定等离子体处理区域的室外壳的等离子体反应器。 能够在加工位置处支撑工件的工件支撑基座面对等离子体处理区域，基座和外壳彼此间隔开，以在它们之间限定其间具有面向壁的泵送环形空间，以便允许气体从其中排出 过程区域。 一对相对的等离子体限制磁极在环形空间的相对的壁之一内，相对的磁极彼此轴向移位。 磁极在加工位置下方轴向移动一定距离，该距离超过环形面的相对壁之间的间隔的相当大的一部分。