公开(公告)号：US20040259470A1

公开(公告)日：2004-12-23

申请号：US10464673

申请日：2003-06-18

Applicant: Applied Materials, Inc.

Inventor： Boguslaw A. Swedek ,  Nils Johansson ,  Manoocher Birang

IPC: B24B049/00

CPC classification number: B24B37/013 ,  B24B49/10

Abstract: Methods and apparatus to implement techniques for monitoring polishing a substrate. Two or more data points are acquired, where each data point has a value affected by features inside a sensing region of a sensor and corresponds to a relative position of the substrate and the sensor as the sensing region traverses through the substrate. A set of reference points is used to modify the acquired data points. The modification compensates for distortions in the acquired data points caused by the sensing region traversing through the substrate. Based on the modified data points, a local property of the substrate is evaluated to monitor polishing.

Abstract translation: 实施用于监测抛光衬底的技术的方法和装置。 获取两个或多个数据点，其中每个数据点具有受传感器感测区域内的特征影响的值，并且对应于感测区域穿过衬底的衬底和传感器的相对位置。 一组参考点用于修改采集的数据点。 该修改补偿由穿过衬底的感测区域引起的所获取的数据点中的失真。 基于修改的数据点，评估基板的局部特性以监测抛光。

公开(公告)号：US20030201770A1

公开(公告)日：2003-10-30

申请号：US10447165

申请日：2003-05-27

Applicant: Applied Materials, Inc.

Inventor： Hiroji Hanawa ,  Nils Johansson ,  Boguslaw Swedek ,  Manoocher Birang

IPC: G01B007/06 ,  G01N027/72

CPC classification number: B24B37/013 ,  B24B37/205 ,  B24B49/02 ,  B24B49/105 ,  B24B49/12 ,  G01B7/105

Abstract: A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.

Abstract translation: 用于在化学机械抛光期间监测衬底中的导电膜的传感器产生撞击衬底并引起涡流的交变磁场。 传感器可以具有芯，围绕芯的第一部分缠绕的第一线圈和缠绕在芯的第二部分上的第二线圈。 传感器可以位于与衬底相对的抛光表面的一侧。 传感器可以检测到驱动信号和测量信号之间的相位差。

公开(公告)号：US20030201769A1

公开(公告)日：2003-10-30

申请号：US10446367

申请日：2003-05-27

Applicant: Applied Materials, Inc.

Inventor： Hiroji Hanawa ,  Nils Johansson ,  Boguslaw Swedek ,  Manoocher Birang

IPC: G01B007/06 ,  G01N027/72

CPC classification number: B24B37/013 ,  B24B37/205 ,  B24B49/02 ,  B24B49/105 ,  B24B49/12 ,  G01B7/105

Abstract: A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.

Abstract translation: 用于在化学机械抛光期间监测衬底中的导电膜的传感器产生撞击衬底并引起涡流的交变磁场。 传感器可以具有芯，围绕芯的第一部分缠绕的第一线圈和缠绕在芯的第二部分上的第二线圈。 传感器可以位于与衬底相对的抛光表面的一侧。 传感器可以检测到驱动信号和测量信号之间的相位差。

公开(公告)号：US20020164925A1

公开(公告)日：2002-11-07

申请号：US09847867

申请日：2001-05-02

Applicant: Applied Materials, Inc.

Inventor： Boguslaw A. Swedek ,  Manoocher Birang ,  Nils Johansson

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00

CPC classification number: B24B37/013 ,  B24B49/02 ,  B24B49/10 ,  B24B49/12 ,  G01B7/105 ,  G01B11/0683

Abstract: A chemical mechanical polishing apparatus and method can use an eddy current monitoring system and an optical monitoring system. Signals from the monitoring systems can be combined on an output line and extracted by a computer. A thickness of a polishing pad can be calculated. The eddy current monitoring system and optical monitoring system can measure substantially the same location on the substrate.

Abstract translation: 化学机械抛光装置和方法可以使用涡流监测系统和光学监测系统。 来自监控系统的信号可以组合在输出线上并由计算机提取。 可以计算抛光垫的厚度。 涡流监测系统和光学监测系统可以测量基板上基本相同的位置。

公开(公告)号：US20040014395A1

公开(公告)日：2004-01-22

申请号：US10397633

申请日：2003-03-25

Applicant: Applied Materials, Inc., a Delaware corporation

Inventor： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00

CPC classification number: B24B47/12 ,  B24B37/013 ,  B24B37/205 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  G01B11/0683

Abstract: An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

Abstract translation: 使用用于在CMP处理期间原地确定终止该过程的端点的装置的晶片的化学机械抛光（CMP）的装置和方法。 该装置包括能够产生朝向晶片的激光束并检测从晶片反射的光的激光干涉仪，以及邻近通过压板形成的孔布置的窗口。 该窗口在晶片覆盖窗口的至少部分时间内为激光束提供通路。

公开(公告)号：US20030216105A1

公开(公告)日：2003-11-20

申请号：US10446878

申请日：2003-05-27

Applicant: Applied Materials, Inc.

Inventor： Hiroji Hanawa ,  Nils Johansson ,  Bogusla Swedek ,  Manoocher Birang

IPC: B24B049/00 ,  B24B051/00

CPC classification number: B24B37/013 ,  B24B37/205 ,  B24B49/02 ,  B24B49/105 ,  B24B49/12 ,  G01B7/105

Abstract: A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.

Abstract translation: 用于在化学机械抛光期间监测衬底中的导电膜的传感器产生撞击衬底并引起涡流的交变磁场。 传感器可以具有芯，围绕芯的第一部分缠绕的第一线圈和缠绕在芯的第二部分上的第二线圈。 传感器可以位于与衬底相对的抛光表面的一侧。 传感器可以检测到驱动信号和测量信号之间的相位差。

公开(公告)号：US20030206010A1

公开(公告)日：2003-11-06

申请号：US10446550

申请日：2003-05-27

Applicant: Applied Materials, Inc.

Inventor： Hiroji Hanawa ,  Nils Johansson ,  Boguslaw Swedek ,  Manoocher Birang

IPC: G01B007/06

CPC classification number: B24B37/013 ,  B24B37/205 ,  B24B49/02 ,  B24B49/105 ,  B24B49/12 ,  G01B7/105

Abstract: A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.

Abstract translation: 用于在化学机械抛光期间监测衬底中的导电膜的传感器产生撞击衬底并引起涡流的交变磁场。 传感器可以具有芯，围绕芯的第一部分缠绕的第一线圈和缠绕在芯的第二部分上的第二线圈。 传感器可以位于与衬底相对的抛光表面的一侧。 传感器可以检测到驱动信号和测量信号之间的相位差。

公开(公告)号：US20020183977A1

公开(公告)日：2002-12-05

申请号：US10081088

申请日：2002-02-20

Applicant: Applied Materials, Inc.

Inventor： Zhifeng Sui ,  Paul E. Luscher ,  Nils Johansson ,  Michael D. Welch

IPC: G06F011/00

CPC classification number: H01L21/67253 ,  H01J37/32935 ,  H01J37/32963

Abstract: In an endpoint detection method for a process performed in a substrate processing chamber with an energized gas, a process variable of the process is detected. The process variable comprising at least one of (i) a radiation emitted by the energized gas, (ii) a radiation reflected from a substrate in the chamber, (iii) a reflected power level of the energized gas, and (iv) a temperature in the chamber. An endpoint signal is issued when the process variable is indicative of an endpoint of the process. A process parameter of the process is also detected, the process parameter comprising at least one of (i) a source power, (ii) an RF forward power, reflected power, or match components, (iii) an RF peak-to-peak voltage, current or phase, (iv) a DC bias level, (v) a chamber pressure or throttle valve position, (vi) a gas composition or flow rate, (vii) a substrate temperature or composition, (viii) a temperature of a chamber component or wall, and (ix) a magnetic confinement level or magnet position. The endpoint signal is determined to be true or false by evaluating the process parameter.

Abstract translation: 在具有通电气体的基板处理室中执行的处理的端点检测方法中，检测该处理的过程变量。 所述过程变量包括以下中的至少一个：（i）由所述通电气体发射的辐射，（ii）从所述室中的衬底反射的辐射，（iii）所述通电气体的反射功率水平，以及（iv） 在房间里 当过程变量指示过程的终点时，发出端点信号。 还检测该过程的过程参数，该过程参数包括以下中的至少一个：（i）源功率，（ii）RF正向功率，反射功率或匹配分量，（iii）RF峰 - 峰 电压，电流或相位，（iv）DC偏置电平，（v）腔室压力或节流阀位置，（vi）气体组成或流速，（vii）衬底温度或组成，（viii） 腔室部件或壁，以及（ix）磁限制水平或磁体位置。 通过评估过程参数将端点信号确定为真或假。