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公开(公告)号:US20020157793A1
公开(公告)日:2002-10-31
申请号:US10170827
申请日:2002-06-12
发明人: Michael S. Cox , Canfeng Lai , Robert B. Majewski , David P. Wanamaker , Christopher T. Lane , Peter Loewenhardt , Shamouil Shamouilian , John P. Parks
IPC分类号: C23F001/00 , C23C016/00
CPC分类号: H01J37/32009 , H01J37/321
摘要: A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.
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2.
公开(公告)号:US20040065645A1
公开(公告)日:2004-04-08
申请号:US10267711
申请日:2002-10-08
发明人: Michael Welch , Paul E. Luscher , Siamak Salimian , Rolf Guenther , Zhong Qiang Hua , Son Phi , Peter Loewenhardt
IPC分类号: B23K010/00 , H05B001/02
CPC分类号: H01L21/67248 , H01J37/32458 , H01J37/32522 , H01L21/67109
摘要: The temperature of a plasma chamber of a semiconductor fabrication tool is maintained substantially constant utilizing a variety of techniques, separately or in combination. One technique is to provide the exterior surface of the plasma chamber dome with a plurality of fins projecting into high velocity regions of an overlying airflow in order to dissipate heat from the chamber. Ducting defined by cover overlying the exposed exterior surface of the dome may also feature projecting lips or an airfoil to place high velocity components of the airflow into contact within the exterior dome surface and the fins. Other techniques include employing a high speed fan to control airflow circulation, and the use of temperature sensors in communication the fan through a processor to control fan speed and thereby regulate chamber temperature.
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