公开(公告)号：US12099241B2

公开(公告)日：2024-09-24

申请号：US18305256

申请日：2023-04-21

Applicant: Applied Materials, Inc.

Inventor： Peter Kurunczi ,  Joseph C. Olson ,  Morgan Evans ,  Rutger Meyer Timmerman Thijssen

IPC: G02B6/34 ,  G03F7/00 ,  G03F7/09 ,  B29C33/38

CPC classification number: G02B6/34 ,  G03F7/0005 ,  G03F7/094 ,  B29C33/3842 ,  G02B2207/101 ,  G03F7/0002

Abstract: A method for forming a device structure is disclosed. The method of forming a device structure includes forming a variable-depth structure in a device material layer using a laser ablation. A plurality of device structures is formed in the variable-depth structure to define slanted device structures therein. The variable-depth structure and the slanted device structures are formed using an etch process.

公开(公告)号：US11662524B2

公开(公告)日：2023-05-30

申请号：US16818457

申请日：2020-03-13

Applicant: Applied Materials, Inc.

Inventor： Peter Kurunczi ,  Joseph Olson ,  Morgan Evans ,  Rutger Meyer Timmerman Thijssen

IPC: G02B6/34 ,  G03F7/09 ,  G03F7/00 ,  B29C33/38

CPC classification number: G02B6/34 ,  G03F7/0005 ,  G03F7/094 ,  B29C33/3842 ,  G02B2207/101 ,  G03F7/0002

Abstract: A method for forming a device structure is disclosed. The method of forming a device structure includes forming a variable-depth structure in a device material layer using a laser ablation. A plurality of device structures is formed in the variable-depth structure to define slanted device structures therein. The variable-depth structure and the slanted device structures are formed using an etch process.