SEMICONDUCTOR PROCESSING CHAMBER FOR IMPROVED PRECURSOR FLOW

    公开(公告)号:US20180337024A1

    公开(公告)日:2018-11-22

    申请号:US15981089

    申请日:2018-05-16

    Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define an opening to a central channel at the first end, and the central channel may be characterized by a first cross-sectional surface area. The adapter may define an exit from a second channel at the second end, and the adapter may define a transition between the central channel and the second channel within the adapter between the first end and the second end. The adapter may define a third channel between the transition and the second end of the adapter, and the third channel may be fluidly isolated from the central channel and the second channel.

    GAS DELIVERY APPARATUS FOR PROCESS EQUIPMENT
    2.
    发明申请
    GAS DELIVERY APPARATUS FOR PROCESS EQUIPMENT 审中-公开
    用于过程设备的气体输送装置

    公开(公告)号:US20160237570A1

    公开(公告)日:2016-08-18

    申请号:US14622218

    申请日:2015-02-13

    Abstract: A method of preparing an aluminum tube for use as a gas line includes plating a nickel alloy throughout internal surfaces of the aluminum tube, to form the gas line. A gas line for transport of gases includes an aluminum tube with a nickel alloy coating throughout internal surfaces of the tube. A plasma processing apparatus includes at least two process chambers for exposing a workpiece to a plasma, and a gas line that supplies, from one or more inlet ports, one or more gases for generating the plasma to two outlet ports. Each of the two outlet ports interfaces to a respective one of the process chambers, and the gas line includes an aluminum tube with a nickel alloy coated internal surface.

    Abstract translation: 制备用作气体管线的铝管的方法包括在铝管的内表面镀覆镍合金以形成气体管线。 用于运输气体的气体管线包括贯穿管的内表面的具有镍合金涂层的铝管。 等离子体处理装置包括用于将工件暴露于等离子体的至少两个处理室,以及从一个或多个入口端口将用于产生等离子体的一种或多种气体供应到两个出口的气体管线。 两个出口端口中的每一个与相应的一个处理室相连接,气体管线包括具有镍合金涂层内表面的铝管。

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