公开(公告)号：US20130068390A1

公开(公告)日：2013-03-21

申请号：US13674421

申请日：2012-11-12

Applicant: Applied Materials, Inc.

Inventor： Errol Antonio C. SANCHEZ ,  Johanes S. Swenberg ,  David K. Carlson ,  Roison L. Doherty

IPC: H01L21/67

CPC classification number: H01L21/67017 ,  C30B25/08 ,  C30B29/06 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/31662 ,  H01L21/67028 ,  H01L21/67069 ,  Y10S438/976

Abstract: Embodiments described herein provide apparatus and methods for processing a substrate. One embodiment comprises a cleaning chamber. The cleaning chamber comprises one or more walls that form a low energy processing region, a plasma generating source to deliver electromagnetic energy to the low energy processing region, a first gas source to deliver a silicon containing gas or a germanium containing gas to the low energy processing region, a second gas source to deliver a oxidizing gas to the low energy processing region, an etching gas source to deliver a etching gas to the low energy processing region, and a substrate support having a substrate supporting surface, a biasing electrode, and a substrate support heat exchanging device to control the temperature of the substrate supporting surface.

Abstract translation: 本文描述的实施例提供了用于处理衬底的设备和方法。 一个实施例包括清洁室。 清洁室包括形成低能量处理区域的一个或多个壁，向低能量处理区域输送电磁能的等离子体发生源，将含硅气体或含锗气体输送到低能量的第一气体源 处理区域，将氧化气体输送到低能量处理区域的第二气体源，向低能量处理区域输送蚀刻气体的蚀刻气体源，以及具有基板支撑面的基板支撑体，偏置电极以及 基板支撑热交换装置，用于控制基板支撑表面的温度。