公开(公告)号：US12142480B2

公开(公告)日：2024-11-12

申请号：US17401574

申请日：2021-08-13

Applicant: Applied Materials, Inc.

Inventor： Qinghua Zhao ,  Rui Cheng ,  Ruiyun Huang ,  Dong Hyung Lee ,  Aykut Aydin ,  Karthik Janakiraman

IPC: H01L21/02 ,  H01L21/3205

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more recessed features along the substrate and a seam or void may be defined by the silicon-containing material within at least one of the one or more recessed features along the substrate. The methods may also include treating the silicon-containing material with a hydrogen-containing gas, such as plasma effluents of the hydrogen-containing gas, which may cause a size of the seam or void to be reduced.

公开(公告)号：US11699577B2

公开(公告)日：2023-07-11

申请号：US17330061

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Sarah Michelle Bobek ,  Ruiyun Huang ,  Abdul Aziz Khaja ,  Amit Bansal ,  Dong Hyung Lee ,  Ganesh Balasubramanian ,  Tuan Anh Nguyen ,  Sungwon Ha ,  Anjana M. Patel ,  Ratsamee Limdulpaiboon ,  Karthik Janakiraman ,  Kwangduk Douglas Lee

IPC: H01J37/32 ,  B08B7/00 ,  C23C14/56

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  C23C14/564 ,  H01J37/32449 ,  H01J37/32504 ,  H01J2237/335

Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.

公开(公告)号：US20250037996A1

公开(公告)日：2025-01-30

申请号：US18913024

申请日：2024-10-11

Applicant: Applied Materials, Inc.

Inventor： Qinghua Zhao ,  Rui Cheng ,  Ruiyun Huang ,  Dong Hyung Lee ,  Aykut Aydin ,  Karthik Janakiraman

IPC: H01L21/02 ,  H01L21/3205

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more recessed features along the substrate and a seam or void may be defined by the silicon-containing material within at least one of the one or more recessed features along the substrate. The methods may also include treating the silicon-containing material with a hydrogen-containing gas, such as plasma effluents of the hydrogen-containing gas, which may cause a size of the seam or void to be reduced.

公开(公告)号：US20230050255A1

公开(公告)日：2023-02-16

申请号：US17401574

申请日：2021-08-13

Applicant: Applied Materials, Inc.

Inventor： Qinghua Zhao ,  Rui Cheng ,  Ruiyun Huang ,  Dong Hyung Lee ,  Aykut Aydin ,  Karthik Janakiraman

IPC: H01L21/02 ,  H01L21/3205

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more recessed features along the substrate and a seam or void may be defined by the silicon-containing material within at least one of the one or more recessed features along the substrate. The methods may also include treating the silicon-containing material with a hydrogen-containing gas, such as plasma effluents of the hydrogen-containing gas, which may cause a size of the seam or void to be reduced.

公开(公告)号：US20220384161A1

公开(公告)日：2022-12-01

申请号：US17330061

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Sarah Michelle Bobek ,  Ruiyun Huang ,  Abdul Aziz Khaja ,  Amit Bansal ,  Dong Hyung Lee ,  Ganesh Balasubramanian ,  Tuan Anh Nguyen ,  Sungwon Ha ,  Anjana M. Patel ,  Ratsamee Limdulpaiboon ,  Karthik Janakiraman ,  Kwangduk Douglas Lee

IPC: H01J37/32 ,  B08B7/00 ,  C23C14/56

Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.