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公开(公告)号:US12012653B2
公开(公告)日:2024-06-18
申请号:US17210018
申请日:2021-03-23
Applicant: Applied Materials, Inc.
Inventor: Yuxing Zhang , Tuan Anh Nguyen , Amit Kumar Bansal , Nitin Pathak , Saket Rathi , Thomas Rubio , Udit S. Kotagi , Badri N. Ramamurthi , Dharma Ratnam Srichurnam
IPC: C23C16/44 , C23C16/455
CPC classification number: C23C16/4405 , C23C16/45563
Abstract: The present disclosure relates to a cleaning assemblies, components thereof, and methods associated therewith for substrate processing chambers. In one example, a cleaning assembly for a substrate processing chamber includes a distribution ring. The distribution ring comprises a body with an inlet and an outlet. The outlet is fluidly coupled to an internal volume of the substrate processing chamber via a sidewall of the substrate processing chamber. The cleaning assembly includes a cleaning conduit configured to fluidly couple a gas manifold to the distribution ring for diverting a first portion of cleaning fluid from the gas manifold to the distribution ring.
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公开(公告)号:US11443921B2
公开(公告)日:2022-09-13
申请号:US16898650
申请日:2020-06-11
Applicant: Applied Materials, Inc.
Inventor: Gaosheng Fu , Tuan Anh Nguyen , Amit Kumar Bansal
Abstract: The present disclosure provides an apparatus including a chamber body and a lid defining a volume therein. The apparatus includes a substrate support disposed in the volume opposite the lid. The substrate support includes a support body disposed on a stem, and a ground plate disposed between the support body and the stem. A top flange is coupled to a lower peripheral surface the ground plate and a bottom flange is coupled to a bottom of the chamber body. The bottom flange and the top flange is coupled to one another with a plurality of straps, each of the straps having a first end coupled to the bottom flange and a second end coupled to the top flange.
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公开(公告)号:US11242600B2
公开(公告)日:2022-02-08
申请号:US16904169
申请日:2020-06-17
Applicant: Applied Materials, Inc.
Inventor: Amit Kumar Bansal , Saket Rathi , Tuan Anh Nguyen
IPC: C23C16/40 , C23C16/455
Abstract: Embodiments of the disclosure relate to faceplates for a processing chamber. In one example, a faceplate includes a body having a plurality of apertures formed therethrough. A heating element is disposed within the body, and the heating element circumscribes the plurality of apertures. A support ring is disposed in the body. The support ring circumscribes the heating element. The support ring includes a main body and a cantilever extending radially inward from the main body. The cantilever contacts the body of the faceplate.
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公开(公告)号:US10854491B2
公开(公告)日:2020-12-01
申请号:US16357101
申请日:2019-03-18
Applicant: Applied Materials, Inc.
Inventor: Jason M. Schaller , Michael Rohrer , Tuan Anh Nguyen , William Tyler Weaver , Gregory John Freeman , Robert Brent Vopat
IPC: H01L21/68 , C23C16/458 , H01L21/687 , H01L21/67 , C23C16/455 , C23C16/52 , G05B19/418 , H01L21/02
Abstract: A method and apparatus for of improving processing results in a processing chamber by orienting a substrate support relative to a surface within the processing chamber. The method comprising orienting a supporting surface of a substrate support in a first orientation relative to an output surface of a showerhead, where the first orientation of the supporting surface relative to the output surface is not coplanar, and depositing a first layer of material on a substrate disposed on the supporting surface that is oriented in the first orientation.
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公开(公告)号:US10438860B2
公开(公告)日:2019-10-08
申请号:US15136611
申请日:2016-04-22
Applicant: Applied Materials, Inc.
Inventor: Amit Kumar Bansal , Juan Carlos Rocha , Karthik Janakiraman , Tuan Anh Nguyen
IPC: C23C16/458 , H01L21/66 , H01L21/02 , H01L21/285 , H01L21/687 , C23C16/455 , C23C16/52 , H01L21/67
Abstract: The implementations described herein generally relate to steps for the dynamic, real-time control of the process spacing between a substrate support and a gas distribution medium during a deposition process. Multiple dimensional degrees of freedom are utilized to change the angle and spacing of a substrate plane with respect to the gas distributing medium at any time during the deposition process. As such, the substrate and/or substrate support may be leveled, tilted, swiveled, wobbled, and/or moved during the deposition process to achieve improved film uniformity. Furthermore, the independent tuning of each layer may be had due to continuous variations in the leveling of the substrate plane with respect to the showerhead to average effective deposition on the substrate, thus improving overall stack deposition performance.
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公开(公告)号:US11827980B2
公开(公告)日:2023-11-28
申请号:US17974408
申请日:2022-10-26
Applicant: Applied Materials, Inc.
Inventor: Nitin Pathak , Amit Kumar Bansal , Tuan Anh Nguyen , Thomas Rubio , Badri N. Ramamurthi , Juan Carlos Rocha-Alvarez
IPC: C23C16/458 , C23C16/455 , C23C16/44
CPC classification number: C23C16/4585 , C23C16/4412 , C23C16/45565 , H01J2329/94 , H01J2329/941
Abstract: Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.
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公开(公告)号:US11699577B2
公开(公告)日:2023-07-11
申请号:US17330061
申请日:2021-05-25
Applicant: Applied Materials, Inc.
Inventor: Sarah Michelle Bobek , Ruiyun Huang , Abdul Aziz Khaja , Amit Bansal , Dong Hyung Lee , Ganesh Balasubramanian , Tuan Anh Nguyen , Sungwon Ha , Anjana M. Patel , Ratsamee Limdulpaiboon , Karthik Janakiraman , Kwangduk Douglas Lee
CPC classification number: H01J37/32862 , B08B7/0035 , C23C14/564 , H01J37/32449 , H01J37/32504 , H01J2237/335
Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.
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公开(公告)号:US11499666B2
公开(公告)日:2022-11-15
申请号:US16400090
申请日:2019-05-01
Applicant: Applied Materials, Inc.
Inventor: Jason M. Schaller , Michael P. Rohrer , Tuan Anh Nguyen
Abstract: Embodiments described herein relate to a precision dynamic leveling mechanism for repeatedly positioning the pedestal within a process. The precision dynamic leveling mechanism includes bearing assemblies. Bearing assemblies having inner races forced against a pedestal assembly carrier and outer races forced against a guide adaptor provide nominal clearance between the inner races and outer races to allow the inner races and the outer races to slide on each other with minimal or no radial motion.
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公开(公告)号:US11492705B2
公开(公告)日:2022-11-08
申请号:US16896982
申请日:2020-06-09
Applicant: Applied Materials, Inc.
Inventor: Nitin Pathak , Amit Kumar Bansal , Tuan Anh Nguyen , Thomas Rubio , Badri N. Ramamurthi , Juan Carlos Rocha-Alvarez
IPC: C23C16/458 , C23C16/455 , C23C16/44
Abstract: Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.
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公开(公告)号:US11293099B2
公开(公告)日:2022-04-05
申请号:US16867307
申请日:2020-05-05
Applicant: Applied Materials, Inc.
Inventor: Amit Kumar Bansal , Juan Carlos Rocha-Alvarez , Sanjeev Baluja , Sam H. Kim , Tuan Anh Nguyen
IPC: C23C16/455
Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and an underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.
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