公开(公告)号：US10008388B2

公开(公告)日：2018-06-26

申请号：US15413944

申请日：2017-01-24

申请人： Applied Materials, Inc.

发明人： Ping Han Hsieh ,  Teng-fang Kuo ,  Shi Wei Toh ,  Avgerinos V. Gelatos

IPC分类号： H01L21/311 ,  H01L21/768

CPC分类号： H01L21/31116 ,  H01L21/76801

摘要： The present disclosure generally relates to methods of removing oxides and oxide-containing layers from the surfaces of substrates. In one aspect, a method of processing a substrate comprises positioning a substrate in a process chamber, the substrate having an oxide layer thereon; introducing one or more process gases to an interior of the process chamber; ionizing the one or more process gases; exposing the oxide layer to the one or more ionized process gases, wherein the process chamber is maintained at a pressure less than about 50 mTorr during the exposing, and the substrate is maintained at a temperature within a range of about zero degrees Celsius to about 30 degrees Celsius during the exposing; and removing the oxide layer from the surface of the substrate.

公开(公告)号：US11387134B2

公开(公告)日：2022-07-12

申请号：US16249716

申请日：2019-01-16

申请人： APPLIED MATERIALS, INC.

发明人： Muhannad Mustafa ,  Muhammad M. Rasheed ,  Yu Lei ,  Avgerinos V. Gelatos ,  Vikash Banthia ,  Victor H. Calderon ,  Shi Wei Toh ,  Yung-Hsin Lee ,  Anindita Sen

IPC分类号： H01L21/687 ,  H01J37/32 ,  H01L21/683

摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, a process kit for a substrate support includes: an upper edge ring made of quartz and having an upper surface and a lower surface, wherein the upper surface is substantially planar and the lower surface includes a stepped lower surface to define a radially outermost portion and a radially innermost portion of the upper edge ring.

公开(公告)号：US10256076B2

公开(公告)日：2019-04-09

申请号：US14984935

申请日：2015-12-30

申请人： APPLIED MATERIALS, INC.

发明人： Shi Wei Toh ,  Avgerinos V. Gelatos ,  Vikash Banthia

IPC分类号： H01L21/3065 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458 ,  C23C16/455 ,  H01L21/477

摘要： Methods of etching include cycles of low temperature etching of a material layer disposed on a substrate, with at least one of the cycles being followed by activation of unreacted etchant deposits during an inert gas plasma treatment. In some embodiments, a method includes: positioning a substrate in a processing chamber; generating, in a first etching cycle, a plasma from a gas mixture within the processing chamber to form a processing gas including an etchant; exposing, to the etchant, a portion of a material layer disposed on a substrate maintained at a first temperature; generating an inert gas plasma within the processing chamber; generating, in a second etching cycle, a plasma from a gas mixture within the processing chamber to form a processing gas including an etchant; and heating the substrate to a second temperature to sublimate a byproduct of reaction between the etchant and the material layer.