公开(公告)号：US09870921B2

公开(公告)日：2018-01-16

申请号：US15259489

申请日：2016-09-08

申请人： Applied Materials, Inc.

发明人： Christopher S. Olsen ,  Peter Stone ,  Teng-fang Kuo ,  Ping Han Hsieh ,  Manoj Vellaikal

IPC分类号： H01L21/3065 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/02658 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/68742

摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

公开(公告)号：US10199221B2

公开(公告)日：2019-02-05

申请号：US15853397

申请日：2017-12-22

申请人： Applied Materials, Inc.

发明人： Christopher S. Olsen ,  Peter Stone ,  Teng-fang Kuo ,  Ping Han Hsieh ,  Manoj Vellaikal

IPC分类号： H01L21/02 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/687

摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

公开(公告)号：US11087979B2

公开(公告)日：2021-08-10

申请号：US16266485

申请日：2019-02-04

申请人： Applied Materials, Inc.

发明人： Christopher S. Olsen ,  Peter Stone ,  Teng-fang Kuo ,  Ping Han Hsieh ,  Manoj Vellaikal

IPC分类号： H01L21/02 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/687

摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

公开(公告)号：US10861693B2

公开(公告)日：2020-12-08

申请号：US15375683

申请日：2016-12-12

申请人： Applied Materials, Inc.

发明人： Peter Stone ,  Christopher S. Olsen ,  Teng-fang Kuo ,  Ping Han Hsieh ,  Zhenwen Ding

IPC分类号： H01L21/3065 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  H01L21/322 ,  H01L21/311

摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process to form an etched surface of the silicon-containing substrate and forming an epitaxial layer on the etched surface of the silicon-containing substrate. The plasma etch process comprises flowing an etchant gas mixture comprising a fluorine-containing precursor and a hydrogen-containing precursor into a substrate-processing region of a first processing chamber and forming a plasma from the etchant gas mixture flowed into the substrate-processing region.

公开(公告)号：US10008388B2

公开(公告)日：2018-06-26

申请号：US15413944

申请日：2017-01-24

申请人： Applied Materials, Inc.

发明人： Ping Han Hsieh ,  Teng-fang Kuo ,  Shi Wei Toh ,  Avgerinos V. Gelatos

IPC分类号： H01L21/311 ,  H01L21/768

CPC分类号： H01L21/31116 ,  H01L21/76801

摘要： The present disclosure generally relates to methods of removing oxides and oxide-containing layers from the surfaces of substrates. In one aspect, a method of processing a substrate comprises positioning a substrate in a process chamber, the substrate having an oxide layer thereon; introducing one or more process gases to an interior of the process chamber; ionizing the one or more process gases; exposing the oxide layer to the one or more ionized process gases, wherein the process chamber is maintained at a pressure less than about 50 mTorr during the exposing, and the substrate is maintained at a temperature within a range of about zero degrees Celsius to about 30 degrees Celsius during the exposing; and removing the oxide layer from the surface of the substrate.