公开(公告)号：US20240404893A1

公开(公告)日：2024-12-05

申请号：US18677184

申请日：2024-05-29

Applicant: Applied Materials, Inc.

Inventor： Shih-Hao KUO ,  Shih-Hsien LEE ,  Thomas L. LAIDIG ,  Jang Fung CHEN ,  Min Sheng SUEN

IPC: H01L21/66 ,  H01L23/495

Abstract: Embodiments of the present disclosure generally relate to lithography systems. In one embodiment, a method is disclosed. The method includes measuring a location of a die pad of a die placed on a substrate and determining a die pad shift between an expected location of the die pad and the measured location of the die pad. The method also includes using the determined die pad shift and an expected via location to generate a shifted via location for a via electrically connecting to the die pad. The method further includes patterning the via at the shifted via location with a maskless lithography tool and utilizing a physical mask with a mask-based lithography tool to pattern a redistribution layer (RDL) pad electrically connected to the via patterned at the shifted via location with the maskless lithography tool.

公开(公告)号：US20200333711A1

公开(公告)日：2020-10-22

申请号：US16917278

申请日：2020-06-30

Applicant: Applied Materials, Inc.

Inventor： Ching-Chang CHEN ,  Chien-Hua LAI ,  Wei-Chung CHEN ,  Shih-Hao KUO ,  Hsiu-Jen WANG

IPC: G03F7/20

Abstract: Embodiments described provide dynamic imaging systems that compensates for pattern defects resulting from distortion caused by warpage of the substrate. The methods and apparatus described are useful to create compensated exposure patterns. The dynamic imaging system includes an inspection system configured to provide 3D profile measurements and die shift measurements of the first substrate to the interface configured to provide compensated pattern data to the digital lithography system configured to receive the compensated pattern data from the interface and expose the photoresist with a compensated pattern.

公开(公告)号：US20230260815A1

公开(公告)日：2023-08-17

申请号：US18015130

申请日：2021-06-16

Applicant: Applied Materials, Inc.

Inventor： Hsiu-jen WANG ,  Sin-Yi JIANG ,  Neng-rui DONG ,  Shih-Hao KUO ,  Chia-Hung KAO ,  Bang-Yu LIU ,  Hsu-Ming HSU

IPC: H01L21/677 ,  G03F7/20 ,  H01L21/68

CPC classification number: H01L21/67766 ,  H01L21/67781 ,  H01L21/67742 ,  G03F7/7075 ,  H01L21/67745 ,  H01L21/681

Abstract: The present disclosure provides a multi-substrate handling system having an alignment apparatus capable of positioning each of a set of substrates in predetermined orientations for transfer. A buffer chamber is configured to receive and condition the set of substrates which are disposed on a substrate carrier. A first transfer assembly is configured to transfer the set of substrates to and from the buffer chamber and is capable of transferring each of the set of substrates from the alignment apparatus to the carrier in the buffer chamber. The carrier includes a plurality of modules capable of securing the set of substrates. The system includes a second transfer assembly having at least two robots configured to transfer the carrier of the set of substrates between the buffer chamber and a process chamber. The process chamber is capable of processing the set of substrates using different process parameters for each substrate.

公开(公告)号：US20200019065A1

公开(公告)日：2020-01-16

申请号：US16031675

申请日：2018-07-10

Applicant: Applied Materials, Inc.

Inventor： Ching-Chang CHEN ,  Chien-Hua LAI ,  Wei-Chung CHEN ,  Shih-Hao KUO ,  Hsiu-Jen WANG

IPC: G03F7/20

Abstract: Embodiments described provide dynamic imaging systems that compensates for pattern defects resulting from distortion caused by warpage of the substrate. The methods and apparatus described are useful to create compensated exposure patterns. The dynamic imaging system includes an inspection system configured to provide 3D profile measurements and die shift measurements of the first substrate to the interface configured to provide compensated pattern data to the digital lithography system configured to receive the compensated pattern data from the interface and expose the photoresist with a compensated pattern.