公开(公告)号：US10704146B2

公开(公告)日：2020-07-07

申请号：US14973079

申请日：2015-12-17

Applicant: Applied Materials, Inc.

Inventor： Shinichi Oki ,  Yuji Aoki ,  Peter Demonte ,  Yoshinobu Mori

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/687 ,  C23C16/46 ,  H01L21/67

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a support shaft assembly. The support shaft assembly has a ring shaped susceptor, a disc shaped heat plate, and a support shaft system. The support shaft system supports the susceptor and the heat plate, such that the susceptor is supported above the heat plate defining a gap between the heat plate and the susceptor. In another embodiment, the heat plate includes a plurality of grooves and the susceptor includes a plurality of fins. The fins are configured to sit within the grooves such that the susceptor is supported above the heat plate, defining a gap between the heat plate and the susceptor. In another embodiment, a method of processing a substrate in the aforementioned embodiments is disclosed herein.

公开(公告)号：US11441236B2

公开(公告)日：2022-09-13

申请号：US15077345

申请日：2016-03-22

Applicant: Applied Materials, Inc.

Inventor： Shinichi Oki ,  Yoshinobu Mori

IPC: C30B25/08 ,  C23C16/455 ,  C30B29/06 ,  C23C16/458 ,  C23C16/48 ,  H01L21/687 ,  C30B25/12 ,  C30B25/14 ,  F24C15/10 ,  H01L21/02

Abstract: Chamber components for an epitaxial growth apparatus are disclosed. A reaction chamber defined and formed by a ceiling plate. A reactant gas is rectified in a reactant gas supply path disposed in the side wall, so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path. Improvements to the upper side wall, susceptor and rectification plate of the epitaxial growth apparatus have resulted in improvements to the uniformity and formation speed of the epitaxial layer formed on substrates resulting in higher throughput and lower defects.

公开(公告)号：US11032945B2

公开(公告)日：2021-06-08

申请号：US16566055

申请日：2019-09-10

Applicant: Applied Materials, Inc.

Inventor： Shinichi Oki ,  Yoshinobu Mori

IPC: H01L21/67 ,  H05K7/20 ,  C23C16/48

Abstract: Disclosed herein is a heat shield assembly for a processing chamber. The processing chamber includes a body having sidewalls, a bottom and a lid that define an interior volume. The heat shield assembly is disposed in the interior volume, and includes a heat shield and a preheat member. The preheat member includes an inner circumference, and is positioned below the heat shield. A susceptor is disposed in the interior volume and configured to support a substrate, and is positioned within the inner circumference of the preheat member. An opening is positioned between the susceptor and the preheat member. A first section of the opening is proximate to a gas inlet, and is covered by the heat shield. A second section of the annular opening is proximate a gas outlet, and is not covered by the heat shield member.

公开(公告)号：US10544518B2

公开(公告)日：2020-01-28

申请号：US15077354

申请日：2016-03-22

Applicant: Applied Materials, Inc.

Inventor： Shinichi Oki ,  Yoshinobu Mori

IPC: C30B25/08 ,  C23C16/458 ,  C30B25/12 ,  H01L21/687 ,  C23C16/455 ,  C30B25/14 ,  F24C15/10 ,  H01L21/02

Abstract: Chamber components for an epitaxial growth apparatus are disclosed. A reaction chamber defined and formed by a ceiling plate. A reactant gas is rectified in a reactant gas supply path disposed in the side wall, so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path. Improvements to the upper side wall, susceptor and rectification plate of the epitaxial growth apparatus have resulted in improvements to the uniformity and formation speed of the epitaxial layer formed on substrates resulting in higher throughput and lower defects.

公开(公告)号：US10446420B2

公开(公告)日：2019-10-15

申请号：US15637930

申请日：2017-06-29

Applicant: Applied Materials, Inc.

Inventor： Shinichi Oki ,  Yoshinobu Mori ,  Yuji Aoki

IPC: H01L21/67 ,  C23C16/48 ,  H01L21/20 ,  C23C16/44 ,  C23C16/46 ,  C30B25/14 ,  C23C16/455 ,  C23C16/52

Abstract: An epitaxial deposition chamber having an upper cone for controlling air flow above a dome in the chamber, such as a high growth rate epitaxy chamber, is described herein. The upper cone has first and second components separated by two or more gaps in the chamber, each component having a partial cylindrical region having a first concave inner surface, a first convex outer surface, and a fixed radius of curvature of the first concave inner surface, and a partial conical region extending from the partial cylindrical region, the partial conical region having a second concave inner surface, a second convex outer surface, and a varying radius of curvature of the second concave inner surface, wherein the second concave inner surface extends from the partial cylindrical region to a second radius of curvature less than the fixed radius of curvature.

公开(公告)号：US09879358B2

公开(公告)日：2018-01-30

申请号：US15164610

申请日：2016-05-25

Applicant: Applied Materials, Inc.

Inventor： Shinichi Oki ,  Yuji Aoki ,  Yoshinobu Mori

IPC: H01J37/34 ,  C30B25/10 ,  C30B25/12 ,  C23C16/458

CPC classification number: C30B25/10 ,  C23C16/4585 ,  C30B25/12

Abstract: A heat shield assembly for an epitaxy chamber is described herein. The heat shield assembly has a heat shield member and a preheat member. The heat shield member is disposed on the preheat member. The heat shield member has a cutout portion that exposes a portion of the preheat member. The preheat member has a recessed portion to receive the heat shield member.

公开(公告)号：US12165899B2

公开(公告)日：2024-12-10

申请号：US17962410

申请日：2022-10-07

Applicant: Applied Materials, Inc.

Inventor： Shinichi Oki ,  Yuji Aoki ,  Trishul Byregowda Shivalingaiah

IPC: H01L21/683

Abstract: Embodiments of bipolar electrostatic chucks are provided herein. In some embodiments, a bipolar electrostatic chuck includes a ceramic plate; a plurality of electrodes disposed in the ceramic plate, wherein the plurality of electrodes include one or more positive electrodes arranged in a first pattern and one or more negative electrodes arranged in a second pattern; an aluminum base plate coupled to the ceramic plate; a positive conduit extending through the aluminum base plate and electrically coupled to the one or more positive electrodes, and a negative conduit extending through the aluminum base plate and electrically coupled to the one or more negative electrodes; and a first insulative tube disposed about each of the positive conduit and the negative conduit.

公开(公告)号：US10978324B2

公开(公告)日：2021-04-13

申请号：US16584208

申请日：2019-09-26

Applicant: Applied Materials, Inc.

Inventor： Shinichi Oki ,  Yoshinobu Mori ,  Yuji Aoki

IPC: H01L21/67 ,  C23C16/44 ,  C23C16/46 ,  C30B25/14 ,  C23C16/48 ,  H01L21/20 ,  C23C16/455 ,  C23C16/52

Abstract: An epitaxial deposition chamber having an upper cone for controlling air flow above a dome in the chamber, such as a high growth rate epitaxy chamber, is described herein. The upper cone has first and second components separated by two or more gaps in the chamber, each component having a partial cylindrical region having a first concave inner surface, a first convex outer surface, and a fixed radius of curvature of the first concave inner surface, and a partial conical region extending from the partial cylindrical region, the partial conical region having a second concave inner surface, a second convex outer surface, and a varying radius of curvature of the second concave inner surface, wherein the second concave inner surface extends from the partial cylindrical region to a second radius of curvature less than the fixed radius of curvature.