公开(公告)号：US09490116B2

公开(公告)日：2016-11-08

申请号：US14879043

申请日：2015-10-08

Applicant: Applied Materials, Inc.

Inventor： Michael Tsiang ,  Praket P. Jha ,  Xinhai Han ,  Nagarajan Rajagopalan ,  Bok Hoen Kim ,  Tsutomu Kiyohara ,  Subbalakshmi Sreekala

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L27/115

CPC classification number: H01L21/0217 ,  H01L21/02274 ,  H01L27/11582

Abstract: Embodiments of the disclosure provide methods and system for manufacturing film layers with minimum lithographic overlay errors on a semiconductor substrate. In one embodiment, a method for forming a film layer on a substrate includes supplying a deposition gas mixture including a silicon containing gas and a reacting gas onto a substrate disposed on a substrate support in a processing chamber, forming a plasma in the presence of the depositing gas mixture in the processing chamber, applying current to a plasma profile modulator disposed in the processing chamber while supplying the depositing gas mixture into the processing chamber, and rotating the substrate while depositing a film layer on the substrate.

Abstract translation: 本公开的实施例提供了在半导体衬底上制造具有最小光刻重叠误差的膜层的方法和系统。 在一个实施例中，用于在衬底上形成膜层的方法包括将包含含硅气体和反应气体的沉积气体混合物供给到设置在处理室中的衬底支撑体上的衬底上，在存在 在处理室中沉积气体混合物，将电流施加到设置在处理室中的等离子体轮廓调制器，同时将沉积气体混合物供应到处理室中，并且在衬底上沉积膜层的同时旋转衬底。