公开(公告)号：US20240384396A1

公开(公告)日：2024-11-21

申请号：US18589392

申请日：2024-02-27

Applicant: Applied Materials, Inc.

Inventor： Xiangjin XIE ,  Suhas UMESH ,  Martin Lee RIKER

IPC: C23C14/54

Abstract: Embodiments of process chambers having a collimator are provided herein. In some embodiments, a process chamber includes: a chamber body having sidewalls and a top plate to define an interior volume therein, the top plate configured to support a target in the interior volume; a substrate support disposed in the interior volume opposite the top plate; a collimator disposed in the interior volume between the top plate and the substrate support; and a lower shield disposed in the interior volume about the collimator and coupled to the chamber body at a location below an upper surface of the collimator via a ceramic spacer disposed between the lower shield and the chamber body configured to electrically decouple the lower shield from the chamber body.

公开(公告)号：US20240213007A1

公开(公告)日：2024-06-27

申请号：US18089216

申请日：2022-12-27

Applicant: Applied Materials, Inc.

Inventor： Junjie PAN ,  Yida LIN ,  Xiangjin XIE ,  Martin Lee RIKER ,  Suhas UMESH ,  Keith A. MILLER

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/54

CPC classification number: H01J37/3464 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3476 ,  H01J2237/332

Abstract: Methods and apparatus for controlling processing of a substrate within a process chamber, comprising: performing statistical analysis on measurements of deposition profile of at least one previously processed substrate processed in the process chamber, wherein the deposition profile is based at least on modulating a power parameter of at least one power supply affecting a magnetron in the process chamber; determining, based on the statistical analysis, a model of the deposition profile as a function of at least the power parameter; fitting the measurements of deposition profile to the model; determining a power parameter setpoint for the at least one power supply using the fitted model based on a desired deposition profile of an unprocessed substrate; and setting the power parameter setpoint for processing the unprocessed substrate.