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公开(公告)号：US20190252166A1
公开(公告)日：2019-08-15
申请号：US16341991
申请日：2017-10-03
申请人： EVATEC AG
CPC分类号： H01J37/3408 , C23C14/0068 , C23C14/08 , C23C14/086 , C23C14/352 , H01J37/3405 , H01J37/3417 , H01J37/3426 , H01J37/3438 , H01J37/3447 , H01J37/3452 , H01J37/3464 , H01J37/3473 , H01J2237/20214 , H01J2237/332
摘要： A sputtering source includes two facing plate shaped targets and a magnet arrangement along each of the targets. An open coating outlet area from the reaction space between the targets is limited by facing rims of the two plate shaped targets. Catcher plates along each of the rims respectively project in a direction from the rims towards each other into the open coating outlet area, thereby restricting the open coating outlet area as limited by the mutually facing rims of the two plate shaped targets.
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公开(公告)号：US20180254116A1
公开(公告)日：2018-09-06
申请号：US15973231
申请日：2018-05-07
发明人： Anthony Zuppero , Thomas J. Dolan
IPC分类号： G21G7/00
CPC分类号： H01J37/3476 , G21B3/004 , G21G7/00 , H01J37/3464
摘要： Some embodiments include systems to generate transient, elevated effective mass electron quasiparticles for transmuting radioactive fission products. Other embodiments of related systems and methods also are disclosed.
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3.发明授权公开(公告)号：US10053771B2
公开(公告)日：2018-08-21
申请号：US14923353
申请日：2015-10-26
申请人： Tango Systems, Inc.
发明人： Ravi Mullapudi , Manohar Korlapati
CPC分类号： C23C14/352 , C23C14/08 , C23C14/505 , C23C14/541 , H01J37/32724 , H01J37/3405 , H01J37/3455 , H01J37/3464
摘要： A circular PVD chamber has a plurality of sputtering targets mounted on a top wall of the chamber. A pallet in the chamber is coupled to a motor for rotating the pallet about its center axis. The pallet has a diameter less than the diameter of the circular chamber. The pallet is also shiftable in an XY direction to move the center of the pallet beneath any of the targets so all areas of a workpiece supported by the pallet can be positioned directly below any one of the targets. A scanning magnet is in back of each target and is moved, via a programmed controller, to only be above portions of the workpiece so that no sputtered material is wasted. For depositing a material onto small workpieces, a cooling backside gas volume is created between the pallet and the underside of sticky tape supporting the workpieces.
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公开(公告)号：US09988705B2
公开(公告)日：2018-06-05
申请号：US13887013
申请日：2013-05-03
申请人： Viavi Solutions Inc.
发明人： Georg J. Ockenfuss
CPC分类号： C23C14/0036 , C23C14/0063 , C23C14/10 , C23C14/3407 , H01J37/34 , H01J37/3417 , H01J37/3464
摘要： Reactive sputter deposition method and system are disclosed, in which a catalyst gas, such as water vapor, is used to increase the overall deposition rate substantially without compromising formation of a dielectric compound layer and its optical transmission. Addition to the sputtering or reactive gas of the catalyst gas can result in an increase of a deposition rate of the dielectric oxide film substantially without increasing an optical absorption of the film.
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公开(公告)号：US09951412B2
公开(公告)日：2018-04-24
申请号：US13809189
申请日：2011-07-27
申请人： Kenichi Nagata , Nobuhito Makino
发明人： Kenichi Nagata , Nobuhito Makino
IPC分类号： C23C14/00 , C23C14/34 , C21D1/74 , C21D3/06 , C22C14/00 , C22F1/00 , C22F1/18 , C22C27/02 , H01J37/34
CPC分类号： C23C14/34 , C21D1/74 , C21D3/06 , C22C14/00 , C22C27/02 , C22F1/00 , C22F1/18 , C22F1/183 , C23C14/3414 , C23C14/3471 , H01J37/3426 , H01J37/3464 , H01J37/3491 , H01J37/3497 , Y10T29/49865
摘要： Provided is a sputtering target and/or a coil disposed at the periphery of a plasma-generating region for confining plasma. The target and/or the coil has a surface to be eroded having a hydrogen content of 500 μL/cm2 or less. In dealing with reduction in the hydrogen content of the surface of the target and/or the coil, the process of producing the target and/or the coil, in particular, the conditions for heating the surface of the target and/or the coil, which is thought to be cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, the present invention provides a target and/or a coil that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity and provides a method of producing the target and/or the coil.
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公开(公告)号：US09932668B2
公开(公告)日：2018-04-03
申请号：US14923357
申请日：2015-10-26
申请人： Tango Systems, Inc.
CPC分类号： C23C14/352 , C23C14/50 , C23C14/505 , C23C14/541 , H01J37/32724 , H01J37/3405 , H01J37/3411 , H01J37/3455 , H01J37/3464 , H01J2237/006 , H01J2237/2001 , H01J2237/20214
摘要： A circular PVD chamber has a plurality of sputtering targets mounted on a top wall of the chamber. A pallet in the chamber is coupled to a motor for rotating the pallet about its center axis. The pallet has a diameter less than the diameter of the circular chamber. The pallet is also shiftable in an XY direction to move the center of the pallet beneath any of the targets so all areas of a workpiece supported by the pallet can be positioned directly below any one of the targets. A scanning magnet is in back of each target and is moved, via a programmed controller, to only be above portions of the workpiece so that no sputtered material is wasted. For depositing a material onto small workpieces, a cooling backside gas volume is created between the pallet and the underside of sticky tape supporting the workpieces.
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公开(公告)号：US09931607B2
公开(公告)日：2018-04-03
申请号：US14381338
申请日：2013-02-28
申请人： Gediminas Galinis
CPC分类号： B01J3/006 , A61K49/005 , B01J4/002 , B01J19/24 , B01J2204/002 , B01J2219/00085 , B01J2219/00137 , C01B33/02 , C01P2006/60 , C09K11/59 , C23C14/34 , H01J37/34 , H01J37/3464 , H01J2237/002 , Y10T428/2982
摘要： The invention provides a new apparatus (20) and method for producing entirely new types of nanoparticles exhibiting novel properties. The apparatus comprises a vacuum chamber (22) containing a gas and feed means (1) for feeding a liquid jet (26) into the chamber and through the gas. The invention extends to the new types of nanoparticles per se, and to uses of such nanoparticles in various biomedical applications, such as in therapy and diagnosis, as well as in opto-electronics.
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公开(公告)号：US20180033595A1
公开(公告)日：2018-02-01
申请号：US15725456
申请日：2017-10-05
申请人： Cardinal CG Company
发明人： Klaus Hartig
CPC分类号： H01J37/3244 , C23C14/0063 , C23C14/35 , H01J37/32449 , H01J37/3405 , H01J37/3417 , H01J37/3438 , H01J37/3464 , H01J37/347 , H01J2237/006 , H01J2237/327 , H01J2237/332
摘要： Some embodiments provide a magnetron sputtering apparatus including a vacuum chamber within which a controlled environment may be established, a target comprising one or more sputterable materials, wherein the target includes a racetrack-shaped sputtering zone that extends longitudinally along a longitudinal axis and comprises a straightaway area sandwiched between a first turnaround area and a second turnaround area, a gas distribution system that supplies a first gas mixture to the first turnaround area and/or the second turnaround area and supplies a second gas mixture to the straightaway area, wherein the first gas mixture reduces a sputtering rate relative to the second gas mixture. In some cases, the first gas mixture includes inert gas having a first atomic weight and the second gas mixture includes inert gas having a second atomic weight, wherein the second atomic weight is heavier than the first atomic weight.
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公开(公告)号：US20170207099A1
公开(公告)日：2017-07-20
申请号：US15411241
申请日：2017-01-20
发明人： Hiroto Ohtake , Takuya Mori
IPC分类号： H01L21/306 , H01J37/32
CPC分类号： H01L21/30621 , H01J37/32146 , H01J37/32183 , H01J37/3222 , H01J37/32311 , H01J37/3464 , H01J2237/3346 , H01L21/3065
摘要： A method of etching a substrate is described. The method includes disposing a substrate having a surface exposing a first material and a second material in a processing space of a plasma processing system, and performing a modulated plasma etching process to selectively remove the first material at a rate greater than removing the second material. The modulated plasma etching process comprises a power modulation cycle having sequential power application steps that includes: applying a radio frequency (RF) signal to the plasma processing system at a first power level, applying the RF signal to the plasma processing system at a second power level, and applying the RF signal to the plasma processing system at a third power level. Thereafter, the power modulation cycle is repeated at least one more cycle, wherein each modulation cycle includes a modulation time period.
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公开(公告)号：US09624573B2
公开(公告)日：2017-04-18
申请号：US14761193
申请日：2014-01-15
IPC分类号： C23C14/34 , C23C14/35 , C23C14/58 , C23C14/08 , C23C14/54 , H01J37/34 , H01J37/32 , H01L31/18
CPC分类号： C23C14/354 , C23C14/086 , C23C14/34 , C23C14/3407 , C23C14/542 , C23C14/58 , C23C14/5806 , H01J37/3277 , H01J37/3402 , H01J37/3429 , H01J37/3444 , H01J37/3464 , H01L31/1884 , Y02E10/50
摘要： A method for producing a transparent conductive film includes: forming a transparent conductive coating on at least one surface of an organic polymer film substrate in the presence of inert gas by RF superimposed DC sputtering deposition using an indium-based complex oxide target with a high horizontal magnetic field of 85 to 200 mT at a surface of the target in a roll-to-roll system, wherein the indium-based complex oxide target has a content of a tetravalent metal element oxide of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%), wherein the transparent conductive coating has a thickness in the range of 10 to 40 nm, and the transparent conductive coating has a specific resistance of 1.3×10−4 to 2.8×10−4 Ω·cm.
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