公开(公告)号：US12015042B2

公开(公告)日：2024-06-18

申请号：US16797807

申请日：2020-02-21

Applicant: Applied Materials, Inc.

Inventor： Papo Chen ,  Schubert Chu ,  Errol Antonio C Sanchez ,  John Timothy Boland ,  Zhiyuan Ye ,  Lori Washington ,  Xianzhi Tao ,  Yi-Chiau Huang ,  Chen-Ying Wu

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/1892

Abstract: A method of fabricating a semiconductor device includes forming an interconnect structure over a front side of a sensor substrate, thinning the sensor substrate from a back side of the sensor substrate, etching trenches into the sensor substrate, pre-cleaning an exposed surface of the sensor substrate, epitaxially growing a charge layer directly on the pre-cleaned exposed surface of the sensor substrate, and forming isolation structures within the etched trenches.