公开(公告)号：US09633861B2

公开(公告)日：2017-04-25

申请号：US14180054

申请日：2014-02-13

Applicant: Applied Materials, Inc.

Inventor： Weifeng Ye ,  Mei-yee Shek ,  Mihaela Balseanu ,  Xiaojun Zhang ,  Xiaolan Ba ,  Yu Jin ,  Li-Qun Xia

IPC: H01L21/285 ,  H01L21/768

CPC classification number: H01L21/28562 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76883

Abstract: Embodiments of the present invention provide processes to selectively form a metal layer on a conductive surface, followed by flowing a silicon based compound over the metal layer to form a metal silicide layer. In one embodiment, a substrate having a conductive surface and a dielectric surface is provided. A metal layer is then deposited on the conductive surface. A metal silicide layer is formed as a result of flowing a silicon based compound over the metal layer. A dielectric is formed over the metal silicide layer.

公开(公告)号：US20140273438A1

公开(公告)日：2014-09-18

申请号：US14180054

申请日：2014-02-13

Applicant: Applied Materials, Inc.

Inventor： Weifeng YE ,  Mei-yee Shek ,  Mihaela Balseanu ,  Xiaojun Zhang ,  Xiaolan Ba ,  Yu Jin ,  Li-Qun Xia

IPC: H01L21/768

CPC classification number: H01L21/28562 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76883

Abstract: Embodiments of the present invention provide processes to selectively form a metal layer on a conductive surface, followed by flowing a silicon based compound over the metal layer to form a metal silicide layer. In one embodiment, a substrate having a conductive surface and a dielectric surface is provided. A metal layer is then deposited on the conductive surface. A metal silicide layer is formed as a result of flowing a silicon based compound over the metal layer. A dielectric is formed over the metal silicide layer.

Abstract translation: 本发明的实施方案提供了选择性地在导电表面上形成金属层，然后使硅基化合物在金属层上流动以形成金属硅化物层的方法。 在一个实施例中，提供具有导电表面和电介质表面的衬底。 然后在导电表面上沉积金属层。 作为使硅基化合物在金属层上流动的结果形成金属硅化物层。 在金属硅化物层上形成电介质。