公开(公告)号：US09633861B2

公开(公告)日：2017-04-25

申请号：US14180054

申请日：2014-02-13

Applicant: Applied Materials, Inc.

Inventor： Weifeng Ye ,  Mei-yee Shek ,  Mihaela Balseanu ,  Xiaojun Zhang ,  Xiaolan Ba ,  Yu Jin ,  Li-Qun Xia

IPC: H01L21/285 ,  H01L21/768

CPC classification number: H01L21/28562 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76883

Abstract: Embodiments of the present invention provide processes to selectively form a metal layer on a conductive surface, followed by flowing a silicon based compound over the metal layer to form a metal silicide layer. In one embodiment, a substrate having a conductive surface and a dielectric surface is provided. A metal layer is then deposited on the conductive surface. A metal silicide layer is formed as a result of flowing a silicon based compound over the metal layer. A dielectric is formed over the metal silicide layer.

公开(公告)号：US20140273438A1

公开(公告)日：2014-09-18

申请号：US14180054

申请日：2014-02-13

Applicant: Applied Materials, Inc.

Inventor： Weifeng YE ,  Mei-yee Shek ,  Mihaela Balseanu ,  Xiaojun Zhang ,  Xiaolan Ba ,  Yu Jin ,  Li-Qun Xia

IPC: H01L21/768

CPC classification number: H01L21/28562 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76883

Abstract: Embodiments of the present invention provide processes to selectively form a metal layer on a conductive surface, followed by flowing a silicon based compound over the metal layer to form a metal silicide layer. In one embodiment, a substrate having a conductive surface and a dielectric surface is provided. A metal layer is then deposited on the conductive surface. A metal silicide layer is formed as a result of flowing a silicon based compound over the metal layer. A dielectric is formed over the metal silicide layer.

Abstract translation: 本发明的实施方案提供了选择性地在导电表面上形成金属层，然后使硅基化合物在金属层上流动以形成金属硅化物层的方法。 在一个实施例中，提供具有导电表面和电介质表面的衬底。 然后在导电表面上沉积金属层。 作为使硅基化合物在金属层上流动的结果形成金属硅化物层。 在金属硅化物层上形成电介质。

公开(公告)号：US09580801B2

公开(公告)日：2017-02-28

申请号：US14535803

申请日：2014-11-07

Applicant: Applied Materials, Inc.

Inventor： Xiaolan Ba ,  Weifeng Ye ,  Mei-yee Shek ,  Yu Jin ,  Li-Qun Xia ,  Deenesh Padhi ,  Alexandros T. Demos

IPC: H01L21/31 ,  C23C16/44 ,  C23C16/36 ,  C23C16/455 ,  C23C16/50 ,  C23C16/56 ,  H01L21/768 ,  H01L21/02

CPC classification number: C23C16/4408 ,  C23C16/36 ,  C23C16/45523 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02167 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834

Abstract: Embodiments described herein generally relate to the formation of a UV compatible barrier stack. Methods described herein can include delivering a process gas to a substrate positioned in a process chamber. The process gas can be activated to form an activated process gas, the activated process gas forming a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen. The activated process gas can then be purged from the process chamber. An activated nitrogen-containing gas can be delivered to the barrier layer, the activated nitrogen-containing gas having a N2:NH3 ratio of greater than about 1:1. The activated nitrogen-containing gas can then be purged from the process chamber. The above elements can be performed one or more times to deposit the barrier stack.

Abstract translation: 本文描述的实施方案通常涉及形成与UV相容的阻挡层叠体。 本文所述的方法可以包括将处理气体输送到位于处理室中的基板。 工艺气体可以被活化以形成活化的工艺气体，活化的工艺气体在衬底的表面上形成阻挡层，阻挡层包括硅，碳和氮。 然后可以从处理室清除活化的工艺气体。 可以将活化的含氮气体输送到阻挡层，活性含氮气体的N 2 :NH 3比率大于约1:1。 然后可以将活化的含氮气体从处理室清除。 上述元件可以执行一次或多次以沉积势垒堆叠。

公开(公告)号：US08852962B2

公开(公告)日：2014-10-07

申请号：US13659555

申请日：2012-10-24

Applicant: Applied Materials, Inc.

Inventor： Steven Verhaverbeke ,  Roman Gouk ,  Li-Qun Xia ,  Mei-yee Shek ,  Yu Jin

IPC: H01L21/02 ,  G11B5/74 ,  G11B5/84 ,  H01L21/67 ,  H01L21/677 ,  H01L21/033 ,  H01F41/34

CPC classification number: H01F41/34 ,  G11B5/743 ,  G11B5/84 ,  H01L21/0332 ,  H01L21/67161 ,  H01L21/67736

Abstract: Embodiments of the present invention provide methods and apparatus for forming a patterned magnetic layer for use in magnetic media. According to embodiments of the present application, a silicon oxide layer formed by low temperature chemical vapor deposition is used to form a pattern in a hard mask layer, and the patterned hard mask is used to form a patterned magnetic layer by plasma ion implantation.

Abstract translation: 本发明的实施例提供了用于形成用于磁性介质的图案化磁性层的方法和装置。 根据本申请的实施例，使用通过低温化学气相沉积形成的氧化硅层在硬掩模层中形成图案，并且使用图案化的硬掩模通过等离子体离子注入形成图案化的磁性层。