公开(公告)号：US20020098779A1

公开(公告)日：2002-07-25

申请号：US10093897

申请日：2002-03-08

Applicant: Applied Materials, Inc.

Inventor： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: B24B001/00 ,  B24B007/19

CPC classification number: B24B37/26 ,  B24B53/017 ,  H01L21/3212

Abstract: Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

Abstract translation: 通过引入平衡电化学力的材料来减少化学机械抛光（CMP）的磨损。 在本发明的第一实施例中，在抛光工艺中使用在抛光垫表面上的凹槽中具有铜材料的抛光垫以减少凹陷。 在本发明的第二实施例中，抛光垫具有带有铜填充物的穿孔。 在本发明的第三实施例中，抛光头上的铜保持环将铜材料引入CMP工艺以减少凹陷。 在本发明的第四实施例中，在抛光装置中使用铜的调节板。 在本发明的第五实施例中，附加的铜特征被放置在待抛光的基板上。 抛光附加功能通过抛光过程稳定地引入铜。 在本发明的第六个实施方案中，将铜化合物加入到抛光浆料中。

公开(公告)号：US20020077035A1

公开(公告)日：2002-06-20

申请号：US09737414

申请日：2000-12-14

Applicant: Applied Materials, Inc.

Inventor： Yuchun Wang ,  Stan D. Tsai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: B24B001/00

CPC classification number: B08B1/04 ,  B08B3/08 ,  B24B37/042 ,  B24B37/24 ,  B24B53/017 ,  B24D3/346 ,  H01L21/67046

Abstract: Ion exchange materials are employed in CMP methodologies to polish or thin a semiconductor substrate or a layer thereon. Embodiments include a polishing pad having an ion exchange material thereon and polishing a semiconductor substrate or a layer thereon with the polishing pad or a CMP composition including an ion exchange material therein and polishing the substrate or a layer thereon with the CMP composition or both.

Abstract translation: 在CMP方法中使用离子交换材料来研磨或稀薄半导体衬底或其上的层。 实施例包括在其上具有离子交换材料的抛光垫，用抛光垫或其上包含离子交换材料的CMP组合物研磨半导体衬底或其上的层，并用CMP组合物或两者抛光衬底或其上的层。

公开(公告)号：US20020006767A1

公开(公告)日：2002-01-17

申请号：US09843582

申请日：2001-04-26

Applicant: Applied Materials, Inc.

Inventor： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: B08B001/04 ,  B08B006/00 ,  B24B007/00

CPC classification number: H01L21/67046 ,  B08B1/04 ,  B08B3/08 ,  B24B37/042 ,  B24B37/24 ,  B24B53/017 ,  B24D3/346

Abstract: An inventive brush, pad or the like is provided that has functional groups (complexing agents) such as chelating reagents. The complexing agents may be chemically grafted to the brush or pad, may be resin beads physically blended with the brush materials, or the brush or pad may be made of a homogeneous material containing a complexing polymer. The immobilized complexing agents on the brush can effectively pick up metal ions or metal oxides from the substrate surface upon contact but may not etch into the metal lines.

Abstract translation: 提供具有诸如螯合剂的官能团（络合剂）的创新的刷子，垫等。 络合剂可以化学接枝到刷子或垫上，可以是与刷材料物理混合的树脂珠，或者刷或垫可以由含有络合聚合物的均匀材料制成。 刷上固定的络合剂可以在接触时从衬底表面有效地吸收金属离子或金属氧化物，但不会蚀刻到金属线中。

公开(公告)号：US20020182982A1

公开(公告)日：2002-12-05

申请号：US09874177

申请日：2001-06-04

Applicant: Applied Materials, Inc.

Inventor： Jui-Lung Li ,  Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: B24B001/00

CPC classification number: B24B37/0056 ,  B24B37/044 ,  C09G1/02

Abstract: A method and composition for planarizing a substrate. The composition includes a pressure sensitive solution and one or more chemical agents for complexing with a metal or oxidized metal. The method for removal of a copper containing layer from a substrate surface, comprising applying a composition to a polishing media, the composition comprising a pressure sensitive solution, and one or more chemical agents for complexing with a metal or oxidized metal, and polishing the substrate surface with the polishing media.

Abstract translation: 一种用于平坦化衬底的方法和组合物。 组合物包括压敏溶液和用于与金属或氧化金属络合的一种或多种化学试剂。 一种从基材表面除去含铜层的方法，包括将组合物施用于抛光介质，所述组合物包含压敏溶液，以及一种或多种与金属或氧化金属络合的化学试剂，以及研磨该基材 表面与抛光介质。

公开(公告)号：US20020031985A1

公开(公告)日：2002-03-14

申请号：US09842476

申请日：2001-04-25

Applicant: Applied Materials, Inc.

Inventor： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker ,  Shijian Li

IPC: B24B001/00

CPC classification number: H01L21/3212 ,  B24B37/044 ,  C09G1/02

Abstract: A method and composition for planarizing a substrate surface is provided. The polishing composition includes an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal and a stabilizer such as a stannate salt. The composition may further include abrasive particles and/or inhibitors. The composition may be used in a multi-step polishing process including polishing a substrate surface to selectively remove a metal layer with respect to a barrier layer and dielectric layer and polishing a substrate surface using the composition to non-selectively remove the metal layer, a barrier layer, and a dielectric layer from the substrate surface.

Abstract translation: 提供了用于平坦化基板表面的方法和组合物。 抛光组合物包括能够氧化经历平坦化的金属并产生与氧化金属络合的络合剂和稳定剂如锡酸盐的氧化剂。 组合物还可以包括研磨颗粒和/或抑制剂。 组合物可以用于多步抛光工艺中，包括抛光衬底表面以相对于阻挡层和电介质层选择性去除金属层，并使用该组合物抛光衬底表面以非选择性地去除金属层， 阻挡层和介电层。