公开(公告)号：US20030029841A1

公开(公告)日：2003-02-13

申请号：US10025144

申请日：2001-12-18

Applicant: Applied Materials, Inc.

Inventor： Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony S. Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred C. Redeker

IPC: C23F001/00 ,  H01L021/461

CPC classification number: H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

Abstract translation: 提供了用于抛光衬底的方法和装置，其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。 在一个方面，提供了一种用于处理衬底的方法，包括将具有形成在其上的导电材料的衬底定位在具有一个或多个旋转载体头和一个或多个可旋转压板的抛光装置中，其中所述载体头包括保持环和 用于固定基板的薄膜和压板具有设置在其上的抛光制品，其以约0.4psi或更大于膜压力的保持环接触压力将基板表面和抛光制品彼此接触，并抛光基板以去除导电 材料。

公开(公告)号：US20020098779A1

公开(公告)日：2002-07-25

申请号：US10093897

申请日：2002-03-08

Applicant: Applied Materials, Inc.

Inventor： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: B24B001/00 ,  B24B007/19

CPC classification number: B24B37/26 ,  B24B53/017 ,  H01L21/3212

Abstract: Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

Abstract translation: 通过引入平衡电化学力的材料来减少化学机械抛光（CMP）的磨损。 在本发明的第一实施例中，在抛光工艺中使用在抛光垫表面上的凹槽中具有铜材料的抛光垫以减少凹陷。 在本发明的第二实施例中，抛光垫具有带有铜填充物的穿孔。 在本发明的第三实施例中，抛光头上的铜保持环将铜材料引入CMP工艺以减少凹陷。 在本发明的第四实施例中，在抛光装置中使用铜的调节板。 在本发明的第五实施例中，附加的铜特征被放置在待抛光的基板上。 抛光附加功能通过抛光过程稳定地引入铜。 在本发明的第六个实施方案中，将铜化合物加入到抛光浆料中。

公开(公告)号：US20020077035A1

公开(公告)日：2002-06-20

申请号：US09737414

申请日：2000-12-14

Applicant: Applied Materials, Inc.

Inventor： Yuchun Wang ,  Stan D. Tsai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: B24B001/00

CPC classification number: B08B1/04 ,  B08B3/08 ,  B24B37/042 ,  B24B37/24 ,  B24B53/017 ,  B24D3/346 ,  H01L21/67046

Abstract: Ion exchange materials are employed in CMP methodologies to polish or thin a semiconductor substrate or a layer thereon. Embodiments include a polishing pad having an ion exchange material thereon and polishing a semiconductor substrate or a layer thereon with the polishing pad or a CMP composition including an ion exchange material therein and polishing the substrate or a layer thereon with the CMP composition or both.

Abstract translation: 在CMP方法中使用离子交换材料来研磨或稀薄半导体衬底或其上的层。 实施例包括在其上具有离子交换材料的抛光垫，用抛光垫或其上包含离子交换材料的CMP组合物研磨半导体衬底或其上的层，并用CMP组合物或两者抛光衬底或其上的层。

公开(公告)号：US20020090886A1

公开(公告)日：2002-07-11

申请号：US10044379

申请日：2002-01-09

Applicant: Applied Materials, Inc.

Inventor： Ajoy Zutshi ,  Rajeev Bajaj ,  Fred C. Redeker ,  Yutao Ma ,  Kapila Wijekoon

IPC: B24B049/00

CPC classification number: B24B37/12 ,  B24B37/042 ,  B24B37/24

Abstract: Methods and apparatus for planarizing a substrate surface having copper containing materials thereon is provided. In one aspect, the invention provides a system for processing substrates comprising a first platen adapted for polishing a substrate with a hard polishing pad disposed on the first platen, a second platen adapted for polishing a substrate with a hard polishing pad disposed on the second platen, and a third platen adapted for polishing a substrate with a hard polishing pad disposed on the third platen. In another aspect, the invention provides a method for planarizing a substrate surface by the system described above including substantially removing bulk copper containing materials on the first platen, removing residual copper containing materials on the second platen, and then removing a barrier layer on the third platen. A computer readable program may also be provided for performing the methods described herein.

Abstract translation: 提供了在其上具有含铜材料的基板表面平坦化的方法和装置。 一方面，本发明提供了一种用于处理衬底的系统，其包括适于用设置在第一压板上的硬抛光垫抛光衬底的第一压板，适于用设置在第二压板上的硬抛光垫抛光衬底的第二压板 以及适于用设置在第三压板上的硬抛光垫抛光衬底的第三压板。 另一方面，本发明提供了一种用于通过上述系统对衬底表面进行平面化的方法，其包括在第一压板上基本上除去含铜材料，在第二压板上除去残余的含铜材料，然后在第三压板上除去阻挡层 滚筒。 还可以提供用于执行本文描述的方法的计算机可读程序。

公开(公告)号：US20020072313A1

公开(公告)日：2002-06-13

申请号：US10059519

申请日：2002-01-28

Applicant: Applied Materials, Inc., a Delaware corporation

Inventor： Steven M. Zuniga ,  Hung Chih Chen ,  Manoocher Birang ,  Kapila Wijekoon ,  Sen-Hou Ko

IPC: B24B005/00

CPC classification number: B24B37/30 ,  B24B37/32 ,  B24B49/16

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane, the lower surface of which provides a substrate-receiving surface. The carrier head may include a projection which contacts an upper surface of the flexible membrane to apply an increased load to a potentially underpolished region of a substrate. Fluid jets may be used for the same purpose.