公开(公告)号：US20130134129A1

公开(公告)日：2013-05-30

申请号：US13751229

申请日：2013-01-28

Applicant: Applied Materials, Inc.

Inventor： VALENTIN N. TODOROW ,  SAMER BANNA ,  ANKUR AGARWAL ,  ZHIGANG CHEN ,  TSE-CHIANG WANG ,  ANDREW NGUYEN ,  MARTIN JEFF SALINAS ,  SHAHID RAUF

IPC: C23C16/505 ,  B44C1/22

CPC classification number: H01J37/321 ,  B44C1/227 ,  C23C16/505 ,  H01J37/32165 ,  H01J37/3244

Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.

Abstract translation: 本文提供了等离子体处理的方法和装置。 在一些实施例中，等离子体处理装置包括具有内部处理量的处理室; 设置在所述处理室附近的将RF能量耦合到所述处理容积中的第一RF线圈; 以及设置在所述处理室附近以将RF能量耦合到所述处理容积中的第二RF线圈，所述第二RF线圈相对于所述第一RF线圈同轴设置，其中所述第一和第二RF线圈被配置为使得流过所述第一RF线圈的RF电流 RF线圈与RF电流流过RF第二线圈不同相。

公开(公告)号：US20160196953A1

公开(公告)日：2016-07-07

申请号：US15070847

申请日：2016-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： VALENTIN N. TODOROW ,  SAMER BANNA ,  ANKUR AGARWAL ,  ZHIGANG CHEN ,  TSE-CHIANG WANG ,  ANDREW NGUYEN ,  MARTIN JEFF SALINAS ,  SHAHID RAUF

IPC: H01J37/32

CPC classification number: H01J37/321 ,  B44C1/227 ,  C23C16/505 ,  H01J37/32165 ,  H01J37/3244

Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.

公开(公告)号：US20130106286A1

公开(公告)日：2013-05-02

申请号：US13650835

申请日：2012-10-12

Applicant: APPLIED MATERIALS, INC.

Inventor： SAMER BANNA ,  ZHIGANG CHEN ,  VALENTIN TODOROW

IPC: H05H1/46 ,  C23F1/08

CPC classification number: H05H1/46 ,  C23F1/08 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174 ,  H05H2001/4667

Abstract: A plasma processing apparatus may include a process chamber having an interior processing volume; a first RF coil to couple RF energy into the processing volume; a second RF coil to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil; and a third RF coil to couple RF energy into the processing volume, the third RF coil disposed coaxially with respect to the first RF coil, wherein when RF current flows through the each of the RF coils, either the RF current flows out-of-phase through at least one of the RF coils with respect to at least another of the RF coils, or the phase of the RF current may be selectively controlled to be in-phase or out-of-phase in at least one of the RF coils with respect to at least another of the RF coils.

Abstract translation: 等离子体处理装置可以包括具有内部处理量的处理室; 将RF能量耦合到处理量的第一RF线圈; 第二RF线圈，用于将RF能量耦合到所述处理容积中，所述第二RF线圈相对于所述第一RF线圈同轴布置; 以及第三RF线圈，用于将RF能量耦合到所述处理容积中，所述第三RF线圈相对于所述第一RF线圈同轴设置，其中当RF电流流过所述每个所述RF线圈时，所述RF电流流出， 相对于至少另一个RF线圈的RF线圈中的至少一个相位，或RF电流的相位可以被选择性地控制为在至少一个RF线圈中是同相或异相 相对于至少另一个RF线圈。