公开(公告)号：US20140151331A1

公开(公告)日：2014-06-05

申请号：US13778252

申请日：2013-02-27

Applicant: APPLIED MATERIALS, INC.

Inventor： VALENTIN N. TODOROW ,  MICHAEL D. WILLWERTH ,  YING-SHENG LIN ,  DAVID PALAGASHVILI

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32477 ,  H01J37/32651

Abstract: Methods and apparatus for plasma processing of substrates are provided herein. In some embodiments, a deposition shield for use in processing a substrate having a given width may include a first plate having a first plurality of holes disposed through a thickness of the first plate; and a second plate disposed below the first plate and having a second plurality of holes disposed through a thickness of the second plate, wherein individual holes in the first plurality of holes and the second plurality of holes are not aligned.

Abstract translation: 本文提供了基板等离子体处理的方法和装置。 在一些实施例中，用于处理具有给定宽度的衬底的沉积屏蔽可以包括具有穿过第一板的厚度设置的第一多个孔的第一板; 以及第二板，其设置在所述第一板的下方，并且具有穿过所述第二板的厚度设置的第二多个孔，其中所述第一多个孔中的各个孔和所述第二多个孔不对准。

公开(公告)号：US20150068682A1

公开(公告)日：2015-03-12

申请号：US14463205

申请日：2014-08-19

Applicant: APPLIED MATERIALS, INC.

Inventor： SAMER BANNA ,  TZA-JING GUNG ,  VLADIMIR KNYAZIK ,  KYLE TANTIWONG ,  DAN A. MAROHL ,  VALENTIN N. TODOROW ,  STEPHEN YUEN

IPC: H01J37/32

Abstract: Embodiments of inductively coupled plasma (ICP) reactors are provided herein. In some embodiments, a dielectric window for an inductively coupled plasma reactor includes: a body including a first side, a second side opposite the first side, an edge, and a center, wherein the dielectric window has a dielectric coefficient that varies spatially. In some embodiments, an apparatus for processing a substrate includes: a process chamber having a processing volume disposed beneath a lid of the process chamber; and one or more inductive coils disposed above the lid to inductively couple RF energy into and to form a plasma in the processing volume above a substrate support disposed within the processing volume; wherein the lid is a dielectric window comprising a first side and an opposing second side that faces the processing volume, and wherein the lid has a dielectric coefficient that spatially varies to provide a varied power coupling of RF energy from the one or more inductive coils to the processing volume.

Abstract translation: 本文提供电感耦合等离子体（ICP）反应器的实施例。 在一些实施例中，用于电感耦合等离子体反应器的电介质窗包括：主体，包括第一侧，与第一侧相对的第二侧，边缘和中心，其中介电窗口具有在空间上变化的介电系数。 在一些实施例中，用于处理衬底的装置包括：处理室，其具有设置在处理室的盖下方的处理容积; 以及设置在所述盖上方的一个或多个感应线圈，以将RF能量感应耦合并在处理体积中形成等离子体，所述等离子体位于设置在所述处理容积内的衬底支撑件上方; 其中所述盖是包括面向所述处理体积的第一侧和相对的第二侧的电介质窗，并且其中所述盖具有空间变化的介电系数，以提供来自所述一个或多个感应线圈的RF能量与所述一个或多个感应线圈的变化的功率耦合 处理量。

公开(公告)号：US20130134129A1

公开(公告)日：2013-05-30

申请号：US13751229

申请日：2013-01-28

Applicant: Applied Materials, Inc.

Inventor： VALENTIN N. TODOROW ,  SAMER BANNA ,  ANKUR AGARWAL ,  ZHIGANG CHEN ,  TSE-CHIANG WANG ,  ANDREW NGUYEN ,  MARTIN JEFF SALINAS ,  SHAHID RAUF

IPC: C23C16/505 ,  B44C1/22

CPC classification number: H01J37/321 ,  B44C1/227 ,  C23C16/505 ,  H01J37/32165 ,  H01J37/3244

Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.

Abstract translation: 本文提供了等离子体处理的方法和装置。 在一些实施例中，等离子体处理装置包括具有内部处理量的处理室; 设置在所述处理室附近的将RF能量耦合到所述处理容积中的第一RF线圈; 以及设置在所述处理室附近以将RF能量耦合到所述处理容积中的第二RF线圈，所述第二RF线圈相对于所述第一RF线圈同轴设置，其中所述第一和第二RF线圈被配置为使得流过所述第一RF线圈的RF电流 RF线圈与RF电流流过RF第二线圈不同相。

公开(公告)号：US20160196953A1

公开(公告)日：2016-07-07

申请号：US15070847

申请日：2016-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： VALENTIN N. TODOROW ,  SAMER BANNA ,  ANKUR AGARWAL ,  ZHIGANG CHEN ,  TSE-CHIANG WANG ,  ANDREW NGUYEN ,  MARTIN JEFF SALINAS ,  SHAHID RAUF

IPC: H01J37/32

CPC classification number: H01J37/321 ,  B44C1/227 ,  C23C16/505 ,  H01J37/32165 ,  H01J37/3244

Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.