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公开(公告)号：US11651509B2
公开(公告)日：2023-05-16
申请号：US17281948
申请日：2019-10-31
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor： Roman Kris , Roi Meir , Sahar Levin , Ishai Schwarzband , Grigory Klebanov , Shimon Levi , Efrat Noifeld , Hiroshi Miroku , Taku Yoshizawa , Kasturi Saha , Sharon Duvdevani-Bar , Vadim Vereschagin
CPC classification number: G06T7/0004 , G01N23/225 , G06T7/13 , G06T7/194 , G06T7/60 , G06V10/44 , G06V20/695 , G01N2223/401 , G06T2207/10061 , G06T2207/30148
Abstract: A method for process control of a semiconductor structure fabricated by a series of fabrication steps, the method comprising obtaining an image of the semiconductor structure indicative of at least two individual fabrication steps; wherein the image is generated by scanning the semiconductor structure with a charged particle beam and collecting signals emanating from the semiconductor structure; and processing, by a hardware processor, the image to determining a parameter of the semiconductor structure, wherein processing includes measuring step/s from among the fabrication steps as an individual feature.
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公开(公告)号：US09824852B2
公开(公告)日：2017-11-21
申请号：US14985847
申请日：2015-12-31
Applicant: Applied Materials Israel Ltd.
Inventor： Roman Kris , Yakov Weinberg , Yan Ivanchenko , Ishai Schwarzband , Dan Lange , Arbel Englander , Efrat Noifeld , Ran Goldman , Ori Shoval
IPC: H01J37/22 , H01J37/28 , G01N23/225 , G01B15/04
CPC classification number: H01J37/222 , G01N23/2251 , G01N2223/401 , G01N2223/418 , G01N2223/6116 , G01N2223/646 , H01J37/28 , H01J2237/24592 , H01J2237/2813 , H01L22/12
Abstract: A Critical Dimensions Scanning Electron Microscope (CD-SEM) is described that comprises a unit for performing CD-SEM measurements of a semiconductor wafer, a BSE imaging unit for obtaining a Grey Level image (GL) of the wafer, and a unit for GL analysis and for processing the GL analysis results with reference to results of the CD-measurements.
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