公开(公告)号：US11756763B2

公开(公告)日：2023-09-12

申请号：US17616253

申请日：2019-06-06

申请人： Hitachi High-Tech Corporation

发明人： Teruo Kohashi ,  Hideo Morishita ,  Junichi Katane

IPC分类号： H01J37/244 ,  G01N23/2251 ,  H01J37/28

CPC分类号： H01J37/244 ,  G01N23/2251 ,  H01J37/28 ,  H01J2237/2448 ,  H01J2237/24585 ,  H01J2237/2806 ,  H01J2237/2813

摘要： A scanning electron microscope includes a spin detector configured to measure secondary electron spin polarization of secondary electrons emitted from the sample, and an analysis device configured to analyze secondary electron spin polarization data measured by the spin detector. The analysis device evaluates the strain in the sample by calculating a difference in the secondary electron spin polarization data of adjacent pixels.

公开(公告)号：US20190180975A1

公开(公告)日：2019-06-13

申请号：US15955467

申请日：2018-04-17

申请人： Applied Materials Israel Ltd.

发明人： Dror Shemesh ,  Uri Lev ,  Benjamin Colombeau ,  Amir Wachs ,  Kourosh Nafisi

IPC分类号： H01J37/22 ,  H01J37/28 ,  H01J37/244

CPC分类号： H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24475 ,  H01J2237/2804 ,  H01J2237/2813

摘要： A method for detecting crystal defects includes scanning a first FOV on a first sample using a charged particle beam with a plurality of different tilt angles. BSE emitted from the first sample are detected and a first image of the first FOV is created. A first area within the first image is identified where signals from the BSE are lower than other areas of the first image. A second FOV on a second sample is scanned using approximately the same tilt angles or deflections as those used to scan the first area. The BSE emitted from the second sample are detected and a second image of the second FOV is created. Crystal defects within the second sample are identified by identifying areas within the second image where signals from the BSE are different than other areas of the second image.

公开(公告)号：US20190170671A1

公开(公告)日：2019-06-06

申请号：US16147277

申请日：2018-09-28

申请人： Hermes Microvision, Inc.

发明人： Guochong WENG ,  Youjin WANG ,  Chiyan KUAN ,  Chung-Shih PAN

IPC分类号： G01N23/2251 ,  H05F3/02 ,  H01J37/28 ,  H01J37/02 ,  H01J37/20

CPC分类号： G01N23/2251 ,  H01J37/026 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/0041 ,  H01J2237/0044 ,  H01J2237/2007 ,  H01J2237/2008 ,  H01J2237/202 ,  H01J2237/2448 ,  H01J2237/2602 ,  H01J2237/2811 ,  H01J2237/2813 ,  H05F3/02

摘要： A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

公开(公告)号：US10008361B2

公开(公告)日：2018-06-26

申请号：US15318455

申请日：2016-03-04

申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION

发明人： Shuhei Yabu ,  Naoto Koga ,  Mitsuo Akatsu ,  Isao Takahira ,  Shinichi Tomita ,  Hiroyuki Noda ,  Ai Masuda

IPC分类号： H01J37/26 ,  G21K5/00 ,  H01J37/16 ,  H01J37/248

CPC分类号： H01J37/16 ,  H01J37/248 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/2813

摘要： Provided is a charged particle beam device that is small, high performance, and easy to transport. A charged particle beam device (100) is provided with a detachable body unit (15) and an auxiliary unit (14), the body unit (15) housing a functional unit related to charged particle beams, and the auxiliary unit (14) housing a power source unit (9).

公开(公告)号：US09824852B2

公开(公告)日：2017-11-21

申请号：US14985847

申请日：2015-12-31

申请人： Applied Materials Israel Ltd.

发明人： Roman Kris ,  Yakov Weinberg ,  Yan Ivanchenko ,  Ishai Schwarzband ,  Dan Lange ,  Arbel Englander ,  Efrat Noifeld ,  Ran Goldman ,  Ori Shoval

IPC分类号： H01J37/22 ,  H01J37/28 ,  G01N23/225 ,  G01B15/04

CPC分类号： H01J37/222 ,  G01N23/2251 ,  G01N2223/401 ,  G01N2223/418 ,  G01N2223/6116 ,  G01N2223/646 ,  H01J37/28 ,  H01J2237/24592 ,  H01J2237/2813 ,  H01L22/12

摘要： A Critical Dimensions Scanning Electron Microscope (CD-SEM) is described that comprises a unit for performing CD-SEM measurements of a semiconductor wafer, a BSE imaging unit for obtaining a Grey Level image (GL) of the wafer, and a unit for GL analysis and for processing the GL analysis results with reference to results of the CD-measurements.

公开(公告)号：US09640365B2

公开(公告)日：2017-05-02

申请号：US14994140

申请日：2016-01-13

申请人： East China Jiaotong University

发明人： Ming Han ,  Lili Li ,  Guangyao Xiong ,  Honglin Luo ,  Yizao Wan

IPC分类号： G01N23/203 ,  H01J37/244

CPC分类号： H01J37/244 ,  G01N23/203 ,  H01J2237/2813

摘要： A method for determining 3D primitive reciprocal basis of an unknown crystal based on a single EBSD pattern includes steps of geometrically correcting all visible Kikuchi bands with the pattern center and the detector distance used for obtaining corresponding reciprocal vectors, and determining components of the corresponding reciprocal vectors in a 3D reciprocal Cartesian coordinate system, so as to obtain a 3D primitive reciprocal basis. The method given in the present invention is able to effectively exclude fake primitive cells; correctly identify the volume of a primitive cell even though the presence of obvious errors in the width of the Kikuchi bands; and successfully determine a 3D primitive reciprocal basis of unknown crystals based on a single EBSD pattern.

公开(公告)号：US09589765B2

公开(公告)日：2017-03-07

申请号：US14364530

申请日：2012-12-26

申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

发明人： Toshihiko Ogura

IPC分类号： G21K5/08 ,  H01J37/20 ,  H01J37/28

CPC分类号： H01J37/20 ,  G21K5/08 ,  H01J37/28 ,  H01J2237/2003 ,  H01J2237/2004 ,  H01J2237/2813

摘要： When injection of electrons into a sample supporting member causes a potential gradient between an insulative thin film and a conductive thin film at a site of electron beam injection, the potential barrier of the surface of the insulative thin film becomes thin, and an electron emission phenomenon is caused by tunnel effects. Secondary electrons caused in the insulative thin film tunnel to the conductive thin film along the potential gradient. The secondary electrons, having tunneled, reach a sample while diffusing in the conductive thin film. In the case where the sample is a sample with a high electron transmittance, such as a biological sample, the secondary electrons also tunnel through the interior of the sample. The secondary electrons are detected to acquire an SEM image in which the inner structure of the sample is reflected.

摘要翻译： 当电子注入样品支撑构件时，在电子束注入位置处导致绝缘薄膜和导电薄膜之间的电势梯度，绝缘薄膜表面的势垒变薄，并且电子发射现象 是由隧道效应造成的。 二次电子在绝缘薄膜隧道中引发导电薄膜沿着电位梯度。 已经隧穿的二次电子在导电薄膜中扩散时到达样品。 在样品是具有高电子透射率的样品（例如生物样品）的情况下，二次电子也穿过样品的内部。 检测二次电子以获得样品的内部结构被反射的SEM图像。

公开(公告)号：US08963085B2

公开(公告)日：2015-02-24

申请号：US14035767

申请日：2013-09-24

申请人： California Institute of Technology

发明人： Ahmed H. Zewail ,  David J. Flannigan ,  Brett Barwick

IPC分类号： G01N23/00 ,  H01J37/22 ,  H01J37/244 ,  H01J37/28

CPC分类号： H01J37/22 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0432 ,  H01J2237/24485 ,  H01J2237/24507 ,  H01J2237/2482 ,  H01J2237/2809 ,  H01J2237/2813

摘要： A method of obtaining PINEM images includes providing femtosecond optical pulse, generating electron pulses, and directing the electron pulses towards a sample. The method also includes overlapping the femtosecond optical pulses and the electron pulses spatially and temporally at the sample and transferring energy from the femtosecond optical pulses to the electron pulses. The method further includes detecting electron pulses having an energy greater than a zero loss value, providing imaging in space and time.

摘要翻译： 获得PINEM图像的方法包括提供飞秒光脉冲，产生电子脉冲，并将电子脉冲引向样品。 该方法还包括将飞秒光脉冲和电子脉冲在空间和时间上重叠在样品处，并将能量从飞秒光脉冲传递到电子脉冲。 该方法还包括检测具有大于零损耗值的能量的电子脉冲，从而在空间和时间上提供成像。

公开(公告)号：US20140367570A1

公开(公告)日：2014-12-18

申请号：US14326076

申请日：2014-07-08

申请人： EBARA CORPORATION

发明人： Toshifumi Kimba ,  Tohru Satake ,  Tsutomu Karimata ,  Kenji Watanabe ,  Nobuharu Noji ,  Takeshi Murakami ,  Masahiro Hatakeyama ,  Mamoru Nakasuji ,  Hirosi Sobukawa ,  Shoji Yoshikawa ,  Shin Oowada ,  Mutsumi Saito

IPC分类号： H01J37/22 ,  H01J37/18 ,  H01J37/06 ,  H01J37/28

CPC分类号： H01J37/222 ,  G01N23/225 ,  G01N23/2251 ,  H01J37/06 ,  H01J37/073 ,  H01J37/185 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0216 ,  H01J2237/082 ,  H01J2237/2002 ,  H01J2237/2007 ,  H01J2237/202 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/22 ,  H01J2237/24564 ,  H01J2237/2806 ,  H01J2237/2813 ,  H01J2237/2816 ,  H01J2237/2817 ,  H01L2224/48227 ,  H01L2924/01019 ,  H01L2924/01025 ,  H01L2924/01057 ,  H01L2924/01067 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00

摘要： There is provided a substrate inspection method. The method includes: maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; positioning the substrate on a stage in the inspection chamber; selecting an evaluation parameter according to a kind of said processing apparatus; and determining inspection regions of the substrate so that an inspection time required per a lot of the substrate is equal to a processing time spent for said processing step required per a lot of the substrate. The method also includes radiating a primary electron beam from an electron gun; deflecting the primary electron beam with an E*B unit; irradiating said inspection regions of the substrate with the deflected primary electron beam; and projecting secondary electrons emitted from said substrate through the E*B unit onto a detector with a secondary optical system.

摘要翻译： 提供了基板检查方法。 该方法包括：在所述检查室中保持真空; 将所述检查室与振动隔离; 将基板定位在检查室中的台上; 根据所述处理装置的种类选择评估参数; 并且确定基板的检查区域，使得每批次的基板所需的检查时间等于每批基板所需的所述处理步骤所花费的处理时间。 该方法还包括从电子枪辐射一次电子束; 用E * B单元偏转一次电子束; 用偏转的一次电子束照射基板的所述检查区域; 并且通过E * B单元将从所述衬底发射的二次电子投射到具有次级光学系统的检测器上。

公开(公告)号：US08829470B2

公开(公告)日：2014-09-09

申请号：US14060170

申请日：2013-10-22

申请人： FEI Company

发明人： Lubomir T{dot over (u)}ma ,  Josef {hacek over (S)}esták

IPC分类号： G21K5/08 ,  H01J37/26 ,  H01J37/141 ,  H01J37/20

CPC分类号： G21K5/08 ,  H01J37/1413 ,  H01J37/20 ,  H01J37/265 ,  H01J2237/1035 ,  H01J2237/1415 ,  H01J2237/2802 ,  H01J2237/2813

摘要： The invention relates to a charged-particle apparatus having a charged particle source with an optical axis; a magnetic immersion lens comprising a first lens pole and a configurable magnetic circuit; and a first sample stage movable with respect to the optical axis. The apparatus has a first configuration to position the sample, mounted on the first stage, with respect to the optical axis and a second configuration, having a second lens pole mounted on the first stage and intersecting the optical axis, equipped with a second sample stage to position the sample between the two lens poles and is movable with respect to the optical axis, causing the optical properties of the magnetic immersion lens to differ in the two configurations, and can, in the second configuration, be changed by positioning the second lens pole using the first stage, thus changing the magnetic circuit.

摘要翻译： 本发明涉及具有光轴的带电粒子源的带电粒子装置; 一种包含第一透镜柱和可配置磁路的磁浸透镜; 以及可相对于光轴移动的第一样品台。 该装置具有第一配置，用于相对于光轴定位安装在第一台上的样品，并且具有第二配置，其具有安装在第一台上并与光轴相交的第二透镜杆，该第二透镜杆装备有第二样品台 将样品定位在两个透镜杆之间并且可相对于光轴移动，导致两种结构中的浸没透镜的光学特性不同，并且可以在第二构造中通过将第二透镜 使用第一级，从而改变磁路。