公开(公告)号：US20030203614A1

公开(公告)日：2003-10-30

申请号：US10136455

申请日：2002-04-29

Applicant: APPLIED MATERIALS, INC.

Inventor： Nagarajan Rajagopalan ,  Joe Feng ,  Christopher S. Ngai ,  Meiyee Shek ,  Suketu A. Parikh ,  Linh H. Thanh

IPC: H01L021/4763 ,  H01L021/44

CPC classification number: H01L21/76834 ,  C23C18/1245 ,  C23C18/1254 ,  H01L21/31122 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/76838

Abstract: A method for forming a microelectronics device is disclosed. In one embodiment, the method includes depositing a conductive structure on a substrate. A first layer comprising silicon and nitrogen is formed on the substrate. A second layer comprising silicon and nitrogen is then formed on the first layer. The nitrogen to silicon ratio in the first layer is greater than the nitrogen to silicon ratio in the second layer.

Abstract translation: 公开了一种用于形成微电子器件的方法。 在一个实施例中，该方法包括在衬底上沉积导电结构。 在衬底上形成包含硅和氮的第一层。 然后在第一层上形成包含硅和氮的第二层。 第一层中的氮与硅之比大于第二层中的氮与硅之比。

公开(公告)号：US20020133258A1

公开(公告)日：2002-09-19

申请号：US09759854

申请日：2001-01-12

Applicant: Applied Materials. Inc.

Inventor： Christopher Ngai ,  Christopher D. Bencher ,  Joe Feng ,  Peter Chen

IPC: G06F019/00 ,  G05D007/00 ,  G05D011/00 ,  H01L021/31 ,  H01L021/469

CPC classification number: H01L21/76826 ,  C23C16/401 ,  H01L21/02131 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31138 ,  H01L21/3115 ,  H01L21/3143 ,  H01L21/31629 ,  H01L21/32051 ,  H01L21/76807 ,  H01L21/76814

Abstract: Embodiments of the present invention provide nitrogen doping of a fluorinated silicate glass (FSG) layer to improve adhesion between the nitrogen-containing FSG layer and other layers such as barrier layers. In some embodiments, a nitrogen-containing FSG layer is deposited on a substrate in a process chamber by supplying a gaseous mixture to the process chamber. The gaseous mixture comprises a silicon-containing gas, a fluorine-containing gas, an oxygen-containing gas, and a nitrogen-containing gas. Energy is provided to the gaseous mixture to deposit the nitrogen-containing FSG layer onto the substrate. A plasma may be formed from the gaseous mixture to deposit the layer. In some embodiments, an FSG film that has been formed is doped with nitrogen by a plasma treatment using a nitrogen-containing chemistry. For example, nitrogen ashing in a damascene process may introduce nitrogen dopants into the surface of the FSG layer. The nitrogen-containing FSG layer exhibits good adhesion with barrier layers for copper such as those including tantalum, tantalum nitride, or the like.

Abstract translation: 本发明的实施方案提供氟化硅酸盐玻璃（FSG）层的氮掺杂，以改善含氮FSG层和其它层如阻挡层之间的粘附性。 在一些实施方案中，通过向处理室供应气态混合物，将氮含量的FSG层沉积在处理室中的衬底上。 气体混合物包含含硅气体，含氟气体，含氧气体和含氮气体。 将能量提供给气体混合物以将含氮FSG层沉积到基底上。 可以由气体混合物形成等离子体以沉积该层。 在一些实施方案中，已经形成的FSG膜通过使用含氮化学物质的等离子体处理掺杂氮气。 例如，在镶嵌工艺中的氮灰化可能会将氮掺杂物引入到FSG层的表面中。 含氮的FSG层对于诸如包括钽，氮化钽等的铜的阻挡层具有良好的粘附性。