公开(公告)号：US20230260802A1

公开(公告)日：2023-08-17

申请号：US17674127

申请日：2022-02-17

Applicant: Applied Materials, Inc.

Inventor： Daekyoung Kim ,  Ho Jeong Kim ,  Byungkook Kong ,  Sangwook Kim

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/32137 ,  H01L21/02126 ,  H01L21/02532 ,  H01L21/67248

Abstract: Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may include at least one layer of silicon-containing material and at least one layer of silicon-and-germanium-containing material along the substrate. The methods may include forming a plasma of the fluorine-containing precursor and the hydrogen-containing precursor within the processing region. The methods may include contacting the at least one layer of silicon-containing material and the at least one layer of silicon-and-germanium-containing material with plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor. The methods may include removing the at least one layer of silicon-containing material at a higher rate than the at least one layer of silicon-and-germanium-containing material.

公开(公告)号：US20180292756A1

公开(公告)日：2018-10-11

申请号：US15481885

申请日：2017-04-07

Applicant: Applied materials, Inc.

Inventor： Byungkook Kong ,  Sangwook Kim ,  SeungHyun Park ,  Abhijeet Bagal ,  Kyoungjin Lee ,  Daksh Agarwal

IPC: G03F7/20 ,  G03F7/36 ,  G03F7/16 ,  H01L21/033

Abstract: A coating layer is deposited on a patterned feature on a first portion of a substrate. A second portion of the substrate outside the patterned feature is etched. The etching and the depositing are performed in a single pulsed plasma process using at least one of a pulsed source power signal and a pulsed bias power signal.