公开(公告)号：US09627216B2

公开(公告)日：2017-04-18

申请号：US14506208

申请日：2014-10-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Byungkook Kong ,  Hoon Sang Lee ,  Jinsu Kim ,  Ho Jeong Kim ,  Xiaosong Ji ,  Hun Sang Kim ,  Jinhan Choi

IPC: H01L21/3065 ,  H01L21/762 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01L21/30655 ,  H01L21/67253 ,  H01L21/76224

Abstract: Embodiments of methods for forming features in a silicon containing layer of a substrate disposed on a substrate support are provided herein. In some embodiments, a method for forming features in a silicon containing layer of a substrate disposed on a substrate support in a processing volume of a process chamber includes: exposing the substrate to a first plasma formed from a first process gas while providing a bias power to the substrate support, wherein the first process gas comprises one or more of a chlorine-containing gas or a bromine containing gas; and exposing the substrate to a second plasma formed from a second process gas while no bias power is provided to the substrate support, wherein the second process gas comprises one or more of an oxygen-containing gas or nitrogen gas, and wherein a source power provided to form the first plasma and the second plasma is continuously provided.

公开(公告)号：US20230260802A1

公开(公告)日：2023-08-17

申请号：US17674127

申请日：2022-02-17

Applicant: Applied Materials, Inc.

Inventor： Daekyoung Kim ,  Ho Jeong Kim ,  Byungkook Kong ,  Sangwook Kim

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/32137 ,  H01L21/02126 ,  H01L21/02532 ,  H01L21/67248

Abstract: Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may include at least one layer of silicon-containing material and at least one layer of silicon-and-germanium-containing material along the substrate. The methods may include forming a plasma of the fluorine-containing precursor and the hydrogen-containing precursor within the processing region. The methods may include contacting the at least one layer of silicon-containing material and the at least one layer of silicon-and-germanium-containing material with plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor. The methods may include removing the at least one layer of silicon-containing material at a higher rate than the at least one layer of silicon-and-germanium-containing material.

公开(公告)号：US09064812B2

公开(公告)日：2015-06-23

申请号：US14072430

申请日：2013-11-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Jinsu Kim ,  Xiaosong Ji ,  Jinhan Choi ,  Ho Jeong Kim ,  Byungkook Kong ,  Hoon Sang Lee

IPC: H01L21/302 ,  H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J2237/3347 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02315 ,  H01L21/3083 ,  H01L21/31116 ,  H01L21/76224

Abstract: Embodiments of methods for etching a substrate include exposing the substrate to a first plasma formed from an inert gas; exposing the substrate to a second plasma formed from an oxygen-containing gas to form an oxide layer on a bottom and sides of a low aspect ratio feature and a high aspect ratio feature, wherein the oxide layer on the bottom of the low aspect ratio feature is thicker than on the bottom of the high aspect ratio feature; etching the oxide layer from the bottom of the low and high aspect ratio features with a third plasma to expose the bottom of the high aspect ratio feature while the bottom of the low aspect ratio feature remains covered; and exposing the substrate to a fourth plasma formed from a halogen-containing gas to etch the bottom of the low aspect ratio feature and the high aspect ratio feature.

Abstract translation: 用于蚀刻衬底的方法的实施例包括将衬底暴露于由惰性气体形成的第一等离子体; 将衬底暴露于由含氧气体形成的第二等离子体以在低纵横比特征和高纵横比特征的底部和侧面上形成氧化物层，其中低纵横比特征的底部上的氧化物层 比高宽比特征的底部厚; 使用第三等离子体从低和高纵横比特征的底部蚀刻氧化物层，以暴露高纵横比特征的底部，而低纵横比特征的底部保持覆盖; 并将衬底暴露于由含卤素气体形成的第四等离子体，以蚀刻低纵横比特征和高纵横比特征的底部。