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11 条记录 (耗时 0.018 秒)

    Set of integrated capacitor arrangements, especially integrated grid capacitors
    1.
    发明申请
    Set of integrated capacitor arrangements, especially integrated grid capacitors 有权
    集成电容器组合，特别是集成电网电容器

    公开(公告)号：US20060097580A1

    公开(公告)日：2006-05-11

    申请号：US10520742

    申请日：2003-06-12

    申请人： Armin Fischer ,  Franz Ungar

    发明人： Armin Fischer ,  Franz Ungar

    IPC分类号： H02M3/06

    CPC分类号： H01L27/0805

    摘要： A set of integrated capacitor arrangements is presented, each of which has a circuitry-effective main capacitor and a connectable correction capacitor. Each capacitor arrangement has an electrically conductive antifuse connection and antifuse interruption between the correction capacitor and the main capacitor, which are produced after the main capacitor has been formed. The connection and interruption enable the capacitance of the capacitor arrangement to be corrected.

    摘要翻译： 提出了一组集成电容器布置，其中每一个具有电路有效的主电容器和可连接的校正电容器。 每个电容器布置在形成主电容器之后产生的校正电容器和主电容器之间具有导电反熔丝连接和反熔断中断。 连接和中断使得可以校正电容器布置的电容。

    Set of integrated capacitor arrangements, especially integrated grid capacitors
    2.
    再颁专利
    Set of integrated capacitor arrangements, especially integrated grid capacitors 有权
    集成电容器组合，特别是集成电网电容器

    公开(公告)号：USRE41684E1

    公开(公告)日：2010-09-14

    申请号：US12175170

    申请日：2003-06-12

    申请人： Armin Fischer ,  Franz Ungar

    发明人： Armin Fischer ,  Franz Ungar

    IPC分类号： H01G4/38

    CPC分类号： H01L27/0805

    摘要： A set of integrated capacitor arrangements is presented, each of which has a circuitry-effective main capacitor and a connectable correction capacitor. Each capacitor arrangement has an electrically conductive antifuse connection and antifuse interruption between the correction capacitor and the main capacitor, which are produced after the main capacitor has been formed. The connection and interruption enable the capacitance of the capacitor arrangement to be corrected.

    摘要翻译： 提出了一组集成电容器布置，其中每一个具有电路有效的主电容器和可连接的校正电容器。 每个电容器布置在形成主电容器之后产生的校正电容器和主电容器之间具有导电反熔丝连接和反熔断中断。 连接和中断使得可以校正电容器布置的电容。

    Set of integrated capacitor arrangements, especially integrated grid capacitors
    3.
    发明授权
    Set of integrated capacitor arrangements, especially integrated grid capacitors 有权

    公开(公告)号：US07079375B2

    公开(公告)日：2006-07-18

    申请号：US10520742

    申请日：2003-06-12

    申请人： Armin Fischer ,  Franz Ungar

    发明人： Armin Fischer ,  Franz Ungar

    IPC分类号： H01G4/38

    CPC分类号： H01L27/0805

    摘要： A set of integrated capacitor arrangements is presented, each of which has a circuitry-effective main capacitor and a connectable correction capacitor. Each capacitor arrangement has an electrically conductive antifuse connection and antifuse interruption between the correction capacitor and the main capacitor, which are produced after the main capacitor has been formed. The connection and interruption enable the capacitance of the capacitor arrangement to be corrected.

    Semiconductor chip with FIB protection
    7.
    发明授权
    Semiconductor chip with FIB protection 失效
    具有FIB保护的半导体芯片

    公开(公告)号：US07038307B2

    公开(公告)日：2006-05-02

    申请号：US10846483

    申请日：2004-05-13

    申请人： Franz Ungar ,  Gunter Schmid

    发明人： Franz Ungar ,  Gunter Schmid

    IPC分类号： H01L23/02

    CPC分类号： H01L23/57 ,  H01L21/02118 ,  H01L21/312 ,  H01L23/293 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： The present disclosure is directed to a semiconductor chip having protection against focused ion beam (FIB) attack. The semiconductor chip includes a conductor structure connected to a dielectric material, which has the property of giving rise, when ions are introduced, to an electrical conductivity which is sufficient for circuit-related connection of the conductors. When such a dielectric material is irradiated with ions, its electrical conductivity increases so that the electronic circuit integrated in the chip registers the electrical connection generated in this way between the conductors adjoining the dielectric material. Organic materials having a π-system are suitable for use as the dielectric material.

    摘要翻译： 本公开涉及具有防聚焦离子束（FIB）攻击的保护的半导体芯片。 半导体芯片包括连接到电介质材料的导体结构，其具有当引入离子时具有引起的特性，导电性足以用于导体的电路相关连接。 当这样的电介质材料被离子照射时，其电导率增加，使得集成在芯片中的电子电路将以这种方式产生的电连接寄存在与电介质材料相邻的导体之间。 具有pi系统的有机材料适合用作介电材料。

    Electrical device and fabrication method
    9.
    发明授权
    Electrical device and fabrication method 有权
    电气设备及制造方法

    公开(公告)号：US08274132B2

    公开(公告)日：2012-09-25

    申请号：US12031321

    申请日：2008-02-14

    申请人： Christian Russ ,  Gunther Lehmann ,  Franz Ungar

    发明人： Christian Russ ,  Gunther Lehmann ,  Franz Ungar

    IPC分类号： H01L29/66

    CPC分类号： H01L23/5256 ,  H01L29/785 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An electrical device with a fin structure, a first section of the fin structure having a first width and a first height, a second section of the fin structure having a second width and a second height, wherein the first width is smaller than the second width and the first height is lower than the second height.

    摘要翻译： 一种具有翅片结构的电气装置，翅片结构的第一部分具有第一宽度和第一高度，翅片结构的第二部分具有第二宽度和第二高度，其中第一宽度小于第二宽度 并且第一高度低于第二高度。

    Electrical Device and Fabrication Method
    10.
    发明申请
    Electrical Device and Fabrication Method 有权
    电气设备和制造方法

    公开(公告)号：US20090206446A1

    公开(公告)日：2009-08-20

    申请号：US12031321

    申请日：2008-02-14

    申请人： Christian Russ ,  Gunther Lehmann ,  Franz Ungar

    发明人： Christian Russ ,  Gunther Lehmann ,  Franz Ungar

    IPC分类号： H01L23/525 ,  H01L21/44

    CPC分类号： H01L23/5256 ,  H01L29/785 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An electrical device with a fin structure, a first section of the fin structure having a first width and a first height, a second section of the fin structure having a second width and a second height, wherein the first width is smaller than the second width and the first height is lower than the second height.

    摘要翻译： 一种具有翅片结构的电气装置，所述翅片结构的第一部分具有第一宽度和第一高度，所述翅片结构的第二部分具有第二宽度和第二高度，其中所述第一宽度小于所述第二宽度 并且第一高度低于第二高度。