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1.发明申请公开(公告)号：US20090283847A1
公开(公告)日：2009-11-19
申请号：US12508293
申请日：2009-07-23
申请人： Atsuko KAWASAKI , Mie Matsuo , Ikuko Inoue , Masayuki Ayabe , Masahiro Sekiguchi , Kazumasa Tanida
发明人： Atsuko KAWASAKI , Mie Matsuo , Ikuko Inoue , Masayuki Ayabe , Masahiro Sekiguchi , Kazumasa Tanida
IPC分类号： H01L31/02
CPC分类号： H01L27/14618 , H01L21/76898 , H01L23/481 , H01L27/14636 , H01L2224/02372 , H01L2224/0392 , H01L2224/0401 , H01L2224/05548 , H01L2224/13022 , H01L2224/13024 , H04N5/2257
摘要： An imaging element is formed on the first main surface of a semiconductor substrate. An external terminal is formed on the second main surface of the semiconductor substrate. A through-hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed on the through-hole electrode in the first main surface. An interlayer insulating film is formed on the first electrode pad and on the first main surface. A second electrode pad is formed on the interlayer insulating film. A passivation film is formed on the second electrode pad and the interlayer insulating film, and has an opening which exposes a portion of the second electrode pad. A contact plug is formed between the first and second electrode pads in a region which does not overlap the opening when viewed in a direction perpendicular to the surface of the semiconductor substrate.
摘要翻译： 成像元件形成在半导体衬底的第一主表面上。 外部端子形成在半导体衬底的第二主表面上。 在形成在半导体衬底中的通孔中形成通孔电极。 第一电极焊盘形成在第一主表面中的通孔电极上。 在第一电极焊盘和第一主表面上形成层间绝缘膜。 在层间绝缘膜上形成第二电极焊盘。 在第二电极焊盘和层间绝缘膜上形成钝化膜，并且具有露出第二电极焊盘的一部分的开口。 当在垂直于半导体衬底的表面的方向观察时，在不与开口重叠的区域中，在第一和第二电极焊盘之间形成接触插塞。
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公开(公告)号：US20110068476A1
公开(公告)日：2011-03-24
申请号：US12875628
申请日：2010-09-03
申请人： Atsuko KAWASAKI , Kenichiro Hagiwara , Ikuko Inoue , Kazutaka Akiyama , Itsuko Sakai , Mie Matsuo , Masahiro Sekiguchi , Yoshiteru Koseki , Hiroki Neko , Koushi Tozuka , Kazuhiko Nakadate , Takuto Inoue
发明人： Atsuko KAWASAKI , Kenichiro Hagiwara , Ikuko Inoue , Kazutaka Akiyama , Itsuko Sakai , Mie Matsuo , Masahiro Sekiguchi , Yoshiteru Koseki , Hiroki Neko , Koushi Tozuka , Kazuhiko Nakadate , Takuto Inoue
IPC分类号： H01L23/48 , H01L21/762
CPC分类号： H01L27/14683 , H01L21/76898 , H01L23/481 , H01L23/522 , H01L24/13 , H01L24/32 , H01L27/14618 , H01L2224/13111 , H01L2224/16 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/12043 , H01L2924/3025 , H01L2924/00
摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.
摘要翻译： 根据一个实施例，公开了一种半导体器件的制造方法。 半导体器件包括具有第一和第二主表面的半导体衬底，以及穿过第一和第二主表面之间的通孔，第一主表面上的焊盘，通孔中的通孔，以及包括 连接部分，以直接连接焊盘和通孔，以及另一个连接部分，以间接连接焊盘和通孔。 该方法包括在第一主表面中形成隔离区，隔离区位于要形成通孔的区域中，并且位于除了形成通孔的区域之外的区域中，形成垫， 以及通过处理所述衬底形成所述通孔以暴露所述衬垫的一部分。
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公开(公告)号：US20130128092A1
公开(公告)日：2013-05-23
申请号：US13530595
申请日：2012-06-22
IPC分类号： H04N5/225
CPC分类号： H04N5/2254 , H01L2224/48091 , H04N5/2257 , H01L2924/00014
摘要： According to one embodiment, a camera module includes an image sensor, a main lens system and a sublens group. The sublens group is provided in an optical path between the main lens system and the image sensor. The sublens group forms an image piece for every pixel block. The image piece corresponds to a part of a subject image. The sublens group is integrated with a support structure. The support structure serves to support the sublens group above the image sensor.
摘要翻译： 根据一个实施例，相机模块包括图像传感器，主透镜系统和亚光片组。 该透镜组设置在主透镜系统和图像传感器之间的光路中。 亚单元组为每个像素块形成图像。 图像片段对应于被摄体图像的一部分。 底片组与支撑结构集成。 支撑结构用于支撑图像传感器上方的底片组。
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公开(公告)号：US20120008934A1
公开(公告)日：2012-01-12
申请号：US13176918
申请日：2011-07-06
申请人： Atsuko KAWASAKI
发明人： Atsuko KAWASAKI
CPC分类号： H04N5/2253 , G03B17/12 , H04N5/2254 , Y10T156/10
摘要： According to one embodiment, a camera module is disclosed. The module includes a semiconductor substrate having a first main surface and a second main surface facing the first main surface. An imaging region is provided on the first main surface. A penetrative electrode penetrates through the semiconductor substrate between the first main surface and the second main surface. An adhesive layer is provided on the first main surface, the adhesive layer being located outside the imaging region. And a lens member is directly bonded to the adhesive layer, the lens member seals the imaging region and houses an imaging lens therein.
摘要翻译： 根据一个实施例，公开了一种相机模块。 该模块包括具有第一主表面和面向第一主表面的第二主表面的半导体衬底。 成像区域设置在第一主表面上。 穿透电极穿过第一主表面和第二主表面之间的半导体衬底。 粘合剂层设置在第一主表面上，粘合剂层位于成像区域的外部。 并且透镜构件直接粘合到粘合剂层，透镜构件密封成像区域并且在其中容纳成像透镜。
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公开(公告)号：US20120068291A1
公开(公告)日：2012-03-22
申请号：US13234471
申请日：2011-09-16
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14618 , H01L27/14625 , H01L2224/13
摘要： According to one embodiment, a solid-state image sensing device includes a semiconductor substrate on which a plurality of pixels are arranged, a transparent substrate including a first through via provided in an opening formed in advance to extend through, an adhesive including a second through via connected to the first through via and configured to bond the semiconductor substrate and the transparent substrate while exposing the pixels, and an imaging lens unit arranged on the transparent substrate.
摘要翻译： 根据一个实施例，固态图像感测装置包括其上布置有多个像素的半导体衬底，透明衬底，其包括设置在预先形成以延伸穿过的开口中的第一通孔，粘合剂，包括第二通孔 通过连接到第一通孔并且被配置为在暴露像素的同时将半导体衬底和透明衬底接合，以及布置在透明衬底上的成像透镜单元。
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