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    Plasma monitoring method and semiconductor production apparatus
    1.
    发明授权
    Plasma monitoring method and semiconductor production apparatus 失效
    等离子体监测方法和半导体生产设备

    公开(公告)号：US06858446B2

    公开(公告)日：2005-02-22

    申请号：US10139536

    申请日：2002-05-06

    申请人： Atsushi Denda ,  Yoshinao Ito

    发明人： Atsushi Denda ,  Yoshinao Ito

    IPC分类号： H05H1/46 ,  C23C14/54 ,  C23C16/50 ,  C23C16/507 ,  C23C16/511 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/00 ,  H05H1/00

    CPC分类号： H01J37/32082 ,  C23C16/507 ,  H01J37/32935

    摘要： In certain embodiments a plasma is supplied from a plasma chamber 10 into a reaction chamber 18 of a plasma CVD apparatus. An electrode 22 is disposed in the reaction chamber 18. A semiconductor wafer on which a thin film is to be formed is placed on the electrode 22. A radio-frequency wave is generated by a radio-frequency wave generator 28 and supplied to the electrode 22 via a radio-frequency matching network 30, a blocking capacitor 32, and an RF probe 34 so as to control the plasma in the plasma chamber 10. A judgment device 38 is electrically connected to the RF probe 34. The voltage and current are be measured by the RF probe and the judgment device 38 is used to judge the state of the plasma in the plasma chamber 10.

    摘要翻译： 在某些实施例中，将等离子体从等离子体室10供应到等离子体CVD装置的反应室18中。 电极22设置在反应室18中。要在其上形成薄膜的半导体晶片放置在电极22上。由射频波发生器28产生射频波并提供给电极 22，通过射频匹配网络30，隔离电容器32和RF探针34，以便控制等离子体室10中的等离子体。判断装置38电连接到RF探针34。电压和电流为 通过RF探头测量，并且使用判断装置38来判断等离子体室10中的等离子体的状态。

    Method for detecting end point of plasma etching, and plasma etching apparatus
    2.
    发明授权
    Method for detecting end point of plasma etching, and plasma etching apparatus 失效
    用于检测等离子体蚀刻终点的方法和等离子体蚀刻装置

    公开(公告)号：US06447691B1

    公开(公告)日：2002-09-10

    申请号：US09287611

    申请日：1999-04-07

    申请人： Atsushi Denda ,  Yoshinao Ito

    发明人： Atsushi Denda ,  Yoshinao Ito

    IPC分类号： H01L213065

    CPC分类号： H01J37/32935

    摘要： Certain embodiments provide a plasma etching apparatus and a method for detecting the end point of plasma etching, which can more accurately detect the end point of plasma etching. A radiofrequency wave generated in a radiofrequency generating system 5 propagates through a lead line 30 and is applied to a cathode 9 in a plasma chamber 1. Plasma 11 thereby is generated in the plasma chamber and selectively etches a semiconductor wafer 12. A RF probe 8 measures the voltage and current of the radiofrequency wave flowing in the lead line 30. A determination system 15 may determine the end point of the plasma etching on the basis of either the voltage or current, whichever changes first.

    摘要翻译： 某些实施例提供等离子体蚀刻装置和用于检测等离子体蚀刻的终点的方法，其可以更精确地检测等离子体蚀刻的终点。 在射频产生系统5中产生的射频波通过引线30传播并施加到等离子体室1中的阴极9.因此，等离子体11在等离子体室中产生并选择性地蚀刻半导体晶片12.RF探针8 测量在引线30中流动的射频波的电压和电流。确定系统15可以基于电压或电流（以较先者为准）来确定等离子体蚀刻的终点。

    Plasma monitoring method and semiconductor production apparatus
    3.
    发明授权
    Plasma monitoring method and semiconductor production apparatus 失效
    等离子体监测方法和半导体生产设备

    公开(公告)号：US06440260B1

    公开(公告)日：2002-08-27

    申请号：US09287612

    申请日：1999-04-07

    申请人： Atsushi Denda ,  Yoshinao Ito

    发明人： Atsushi Denda ,  Yoshinao Ito

    IPC分类号： H05H100

    CPC分类号： H01J37/32082 ,  C23C16/507 ,  H01J37/32935

    摘要： In certain embodiments a plasma is supplied from a plasma chamber 10 into a reaction chamber 18 of a plasma CVD apparatus. An electrode 22 is disposed in the reaction chamber 18. A semiconductor wafer on which a thin film is to be formed is placed on the electrode 22. A radio-frequency wave is generated by a radio-frequency wave generator 28 and supplied to the electrode 22 via a radio-frequency matching network 30, a blocking capacitor 32, and an RF probe 34 so as to control the plasma in the plasma chamber 10. A judgment device 38 is electrically connected to the RF probe 34. The voltage and current are be measured by the RF probe and the judgment device 38 is used to judge the state of the plasma in the plasma chamber 10.

    摘要翻译： 在某些实施例中，将等离子体从等离子体室10供应到等离子体CVD装置的反应室18中。 电极22设置在反应室18中。要在其上形成薄膜的半导体晶片放置在电极22上。由射频波发生器28产生射频波并提供给电极 22，通过射频匹配网络30，阻塞电容器32和RF探针34，以便控制等离子体室10中的等离子体。判断装置38电连接到RF探针34。电压和电流为 通过RF探头测量，并且使用判断装置38来判断等离子体室10中的等离子体的状态。