摘要:
Systems and methods for reducing or eliminating the effect of timing variations in signals generated by devices that are subject to the history effect, wherein devices are enabled using a combination of timing signals, some of which are subject to timing variations arising from the history effect, and some of which are not. In one embodiment, a sense amplifier includes a pair of serially configured transistors that couple the sense amplifier to ground. One of the transistors is switched on/off by a clock signal that is not subject to history-effect timing variations, and the other is switched on/off by a signal that is subject to such variations. The second signal has pulses that are selectively delayed so that they will (or will not) overlap with the pulses of the clock signal in a controlled manner.
摘要:
A pulse generator circuit includes a first logic means, a second logic means, a first delay means, and a second delay means. The first logic means is for receiving an input clock signal. The first delay means is for delaying the input clock signal by a first delay time. The second logic means is for receiving a signal output from the first logic means. The second delay means is for delaying the signal output from the first logic means by a second delay time.
摘要:
Disclosed are embodiments of a method and apparatus for avoiding cell data destruction caused by cell stability problems in static random access memory (SRAM) cells. In one embodiment, data inside of an SRAM cell is transferred to one of its bitline in advance of an actual Read/Write operation utilizing a transfer device controlled by a pre-read signal. In one embodiment, the read and write bitlines are shared and the transfer device and pr are not needed. Since the bitline voltage has already been changed to the state which reflects the cell data in advance, the memory cells remains relatively stable. By shifting the bitline voltage before the wordline is turned on, the accessed cell is relieved from the stress which would have otherwise caused cell stability problems.
摘要:
Systems and methods for reducing or eliminating the effect of timing variations in signals generated by devices that are subject to the history effect, wherein devices are enabled using a combination of timing signals, some of which are subject to timing variations arising from the history effect, and some of which are not. In one embodiment, a sense amplifier includes a pair of serially configured transistors that couple the sense amplifier to ground. One of the transistors is switched on/off by a clock signal that is not subject to history-effect timing variations, and the other is switched on/off by a signal that is subject to such variations. The second signal has pulses that are selectively delayed so that they will (or will not) overlap with the pulses of the clock signal in a controlled manner.
摘要:
A memory system including a memory array with redundant wordlines is disclosed. The memory system includes a memory wordline tester that determines if any of the wordlines exhibits a defect. The memory system also includes decoder redundancy logic that efficiently couples to wordline shift logic using a reduced number of control signal lines therebetween. The shift logic shifts defective wordlines to upstream wordlines in the array to bypass the defective wordlines.
摘要:
An apparatus, a method, and a computer program are provided to efficiently use a microprocessor array. Typically, microprocessor arrays can be divided into multiple subarrays. Also, in the conventional arrays, each of the subarrays were engaged when the microprocessor array is used. To alleviate the power consumed by the microprocessor arrays, row selection logic is employed to engage only specific rows of subarrays. Therefore, power consumed by unused subarrys is saved.
摘要:
Systems and methods for increasing the amount of current that can flow through the data line pull-down transistors in a sense amplifier by tying the bodies of these transistors to a voltage other than ground. In one embodiment, the bodies of the data line pull-down transistors in a sense amplifier are tied to the intermediate nodes on the opposing side of the sense amplifier to increase the current flow through the data line pull-down transistors, and also to reduce the voltage at the intermediate node that will be pulled low by the action of the bit line transistors. In one embodiment, the sense amplifier also includes pre-charge circuits which pre-charge the intermediate nodes to a predetermined voltage that is not reduced by the threshold voltage of the pull-down transistors.
摘要:
Systems and methods for pre-charging opposing nodes in a sense amplifier to substantially the same voltage in order to reduce or eliminate malfunctions arising from differences in threshold voltages of transistors coupled to the opposing nodes. One embodiment is a method including providing a silicon-on-insulator (SOI) sense amplifier having intermediate nodes between the transistors coupling each output data line to the corresponding input bit line and pre-charging each intermediate node to a predetermined voltage while the sense amplifier is not enabled. In one embodiment, the intermediate nodes are pre-charged by coupling them to a voltage source through pre-charge paths that do not include the data line pull-down transistors. In one embodiment, the method also includes decoupling the pre-charge paths after pre-charging the intermediate nodes and then enabling the sense amplifier.
摘要:
Disclosed is an apparatus for and a method of overcoming signal delay problems in a read-out path occurring in connection with pipelined memory circuits. A latch type sense amplifier (SA) is used to receive the memory cell logic levels during a pre-charge state in a cycle prior to read-out. Thus, the SA may quickly provide an output signal during a read latch clock cycle. The SA output is passed through a dynamically enabled logic circuit to a latch circuit for holding the receiving logic value for use in the next clock cycle.
摘要:
A memory system including a memory array with redundant wordlines. The memory system includes a memory wordline tester that determines if any of the wordlines exhibits a defect. The memory system also includes decoder redundancy logic that efficiently couples to wordline shift logic using a reduced number of control signal lines therebetween. The shift logic shifts defective wordlines to upstream wordlines in the array to bypass the defective wordlines.