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    SEMICONDUCTOR CERAMIC AND POSITIVE TEMPERATURE COEFFICIENT THERMISTOR
    3.
    发明申请
    SEMICONDUCTOR CERAMIC AND POSITIVE TEMPERATURE COEFFICIENT THERMISTOR 有权
    半导体陶瓷和积极温度系数热敏电阻

    公开(公告)号：US20110234364A1

    公开(公告)日：2011-09-29

    申请号：US13154601

    申请日：2011-06-07

    申请人： Naoaki Abe ,  Hayato Katsu ,  Masato Goto ,  Atsushi Kishimoto ,  Akinori Nakayama

    发明人： Naoaki Abe ,  Hayato Katsu ,  Masato Goto ,  Atsushi Kishimoto ,  Akinori Nakayama

    IPC分类号： H01C7/02 ,  H01B1/02

    CPC分类号： H01C7/025 ,  C04B35/46 ,  C04B35/4682 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3262 ,  C04B2235/3298 ,  C04B2235/6584 ,  C04B2235/79

    摘要： A semiconductor ceramic includes a BamTiO3-based composition, as a main component, having a perovskite structure represented by general formula AmBO3, wherein part of Ba constituting the A site is replaced with Na, Bi, Ca, and a rare-earth element having an ionic radius smaller than that of the Na; the content of the rare-earth element when the total number of moles of the elements constituting the A site is 1 mole is 0.0005 to 0.015 on a molar basis; and the content of the Ca when the total number of moles of the elements constituting the A site is 1 mole is 0.05 to 0.20 (preferably 0.125 or more and 0.175 or less) on a molar basis. A PTC thermistor includes a component body 1 formed of the semiconductor ceramic. Accordingly, high reliability is achieved even if an alkali metal element is present.

    摘要翻译： 半导体陶瓷包括作为主要成分的作为主要成分的具有由通式AmBO 3表示的钙钛矿结构的基于BamTiO 3的组合物，其中构成A位的Ba的一部分被Na，Bi，Ca和具有 离子半径小于Na; 当构成A位点的元素的总摩尔数为1摩尔时，稀土元素的含量为摩尔计为0.0005〜0.015。 当构成A位点的元素的总摩尔数为1摩尔时，Ca的含量为摩尔为0.05〜0.20（优选为0.125以上且0.175以下）。 PTC热敏电阻包括由半导体陶瓷形成的部件主体1。 因此，即使存在碱金属元素，也可实现高的可靠性。

    Semiconductor ceramic and positive temperature coefficient thermistor
    5.
    发明授权
    Semiconductor ceramic and positive temperature coefficient thermistor 有权
    半导体陶瓷和正温度系数热敏电阻

    公开(公告)号：US08350662B2

    公开(公告)日：2013-01-08

    申请号：US13154601

    申请日：2011-06-07

    申请人： Naoaki Abe ,  Hayato Katsu ,  Masato Goto ,  Atsushi Kishimoto ,  Akinori Nakayama

    发明人： Naoaki Abe ,  Hayato Katsu ,  Masato Goto ,  Atsushi Kishimoto ,  Akinori Nakayama

    IPC分类号： H01C7/10

    CPC分类号： H01C7/025 ,  C04B35/46 ,  C04B35/4682 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3262 ,  C04B2235/3298 ,  C04B2235/6584 ,  C04B2235/79

    摘要： A semiconductor ceramic includes a BamTiO3-based composition, as a main component, having a perovskite structure represented by general formula AmBO3, wherein part of Ba constituting the A site is replaced with Na, Bi, Ca, and a rare-earth element having an ionic radius smaller than that of the Na; the content of the rare-earth element when the total number of moles of the elements constituting the A site is 1 mole is 0.0005 to 0.015 on a molar basis; and the content of the Ca when the total number of moles of the elements constituting the A site is 1 mole is 0.05 to 0.20 (preferably 0.125 or more and 0.175 or less) on a molar basis. A PTC thermistor includes a component body 1 formed of the semiconductor ceramic. Accordingly, high reliability is achieved even if an alkali metal element is present.

    摘要翻译： 半导体陶瓷包括作为主要成分的作为主要成分的具有由通式AmBO 3表示的钙钛矿结构的基于BamTiO 3的组合物，其中构成A位点的Ba的一部分被Na，Bi，Ca和具有 离子半径小于Na; 当构成A位点的元素的总摩尔数为1摩尔时，稀土元素的含量为摩尔计为0.0005〜0.015。 当构成A位点的元素的总摩尔数为1摩尔时，Ca的含量为摩尔为0.05〜0.20（优选为0.125以上且0.175以下）。 PTC热敏电阻包括由半导体陶瓷形成的部件主体1。 因此，即使存在碱金属元素，也可实现高的可靠性。

    Semiconductor ceramic and positive-coefficient characteristic thermistor
    9.
    发明授权
    Semiconductor ceramic and positive-coefficient characteristic thermistor 有权
    半导体陶瓷和正系数特性热敏电阻

    公开(公告)号：US08390421B2

    公开(公告)日：2013-03-05

    申请号：US13326706

    申请日：2011-12-15

    申请人： Atsushi Kishimoto ,  Wataru Aoto ,  Akinori Nakayama

    发明人： Atsushi Kishimoto ,  Wataru Aoto ,  Akinori Nakayama

    IPC分类号： H01C7/10

    CPC分类号： H01C7/025 ,  C04B35/4682 ,  C04B2235/3208 ,  C04B2235/3258 ,  C04B2235/77 ,  C04B2235/79 ,  H01C17/06533

    摘要： A semiconductor ceramic and a positive-coefficient characteristic thermistor are provided which have a stable PTC characteristic, a high double point, and a wide operating temperature range. The semiconductor ceramic contains, as a main component, a barium titanate-based composition having a perovskite structure expressed by a general formula AmBO3. Out of 100 mol % of the Ti, an amount in a range of 0.05 mol % or more to 0.3 mol % or less of Ti is replaced with W as a semiconductor forming agent, the ratio m of A sites mainly to B sites is 0.99≦m≦1.002, and an actually-measured sintered density is 70% or more and 90% or less of the theoretical sintered density. In the positive-coefficient characteristic thermistor, a component body is formed of the semiconductor ceramic.

    摘要翻译： 提供了具有稳定的PTC特性，高双点和宽工作温度范围的半导体陶瓷和正系数特性热敏电阻。 半导体陶瓷作为主要成分含有具有由通式AmBO 3表示的钙钛矿结构的钛酸钡类组合物。 在100摩尔％的Ti中，作为半导体形成剂的W被替换为0.05摩尔％以上至0.3摩尔％以下的Ti的量，作为主要部位的A部位的比例m为0.99 ＆nlE; m＆nlE; 1.002，实际测量的烧结密度为理论烧结密度的70％以上且90％以下。 在正系数特性热敏电阻中，由半导体陶瓷形成元件体。

    SEMICONDUCTOR CERAMIC AND POSITIVE-COEFFICIENT CHARACTERISTIC THERMISTOR
    10.
    发明申请
    SEMICONDUCTOR CERAMIC AND POSITIVE-COEFFICIENT CHARACTERISTIC THERMISTOR 有权
    半导体陶瓷和正电系统特性热敏电阻

    公开(公告)号：US20120081206A1

    公开(公告)日：2012-04-05

    申请号：US13326706

    申请日：2011-12-15

    申请人： Atsushi Kishimoto ,  Wataru Aoto ,  Akinori Nakayama

    发明人： Atsushi Kishimoto ,  Wataru Aoto ,  Akinori Nakayama

    IPC分类号： H01C7/04 ,  H01B1/00

    CPC分类号： H01C7/025 ,  C04B35/4682 ,  C04B2235/3208 ,  C04B2235/3258 ,  C04B2235/77 ,  C04B2235/79 ,  H01C17/06533

    摘要： A semiconductor ceramic and a positive-coefficient characteristic thermistor are provided which have a stable PTC characteristic, a high double point, and a wide operating temperature range. The semiconductor ceramic contains, as a main component, a barium titanate-based composition having a perovskite structure expressed by a general formula AmBO3. Out of 100 mol % of the Ti, an amount in a range of 0.05 mol % or more to 0.3 mol % or less of Ti is replaced with W as a semiconductor forming agent, the ratio m of A sites mainly to B sites is 0.99≦m≦1.002, and an actually-measured sintered density is 70% or more and 90% or less of the theoretical sintered density. In the positive-coefficient characteristic thermistor, a component body is formed of the semiconductor ceramic.

    摘要翻译： 提供了具有稳定的PTC特性，高双点和宽工作温度范围的半导体陶瓷和正系数特性热敏电阻。 半导体陶瓷作为主要成分含有具有由通式AmBO 3表示的钙钛矿结构的钛酸钡类组合物。 在100摩尔％的Ti中，作为半导体形成剂的W被替换为0.05摩尔％以上至0.3摩尔％以下的Ti的量，作为主要部位的A部位的比例m为0.99 ＆nlE; m＆nlE; 1.002，实际测量的烧结密度为理论烧结密度的70％以上且90％以下。 在正系数特性热敏电阻中，由半导体陶瓷形成元件体。