摘要:
A charged particle beam apparatus for obtaining information of an uneven surface or a depression/protrusion of a sample by irradiating a charged particle beam to a sample having an uneven surface or a depression/protrusion at a plurality of focal positions, measuring signal emitted from the sample, and comparing profile waveforms corresponding to edge portions of the uneven surface.
摘要:
A charged particle beam apparatus for obtaining information of an uneven surface or a depression/protrusion of a sample by irradiating a charged particle beam to a sample having an uneven surface or a depression/protrusion at a plurality of focal positions, measuring signal emitted from the sample, and comparing profile waveforms corresponding to edge portions of the uneven surface.
摘要:
A charged particle beam apparatus for obtaining information of an uneven surface or a depression/protrusion of a sample by irradiating a charged particle beam to a sample having an uneven surface or a depression/protrusion at a plurality of focal positions, measuring signal emitted from the sample, and comparing profile waveforms corresponding to edge portions of the uneven surface.
摘要:
A charged particle beam apparatus for obtaining information of an uneven surface or a depression/protrusion of a sample by irradiating a charged particle beam to a sample having an uneven surface or a depression/protrusion at a plurality of focal positions, measuring signal emitted from the sample, and comparing profile waveforms corresponding to edge portions of the uneven surface.
摘要:
An operator-free and fully automated semiconductor inspection system with high throughput is realized. All conditions required for capturing and inspection are generated from design information such as CAD data. In order to perform actual inspection under the conditions, a semiconductor inspection system is composed of a navigation system for generating all the conditions required for capturing and inspection from the design information and a scanning electron microscope system for actually performing capturing and inspection. Moreover, in the case of performing a matching process between designed data and a SEM image, deformed parts are corrected by use of edge information in accordance with multiple directions and smoothing thereof. Furthermore, a SEM image corresponding to a detected position is re-registered as a template, and the matching process is thereby performed.
摘要:
An operator-free and fully automated semiconductor inspection system with high throughput is realized. All conditions required for capturing and inspection are generated from design information such as CAD data. In order to perform actual inspection under the conditions, a semiconductor inspection system is composed of a navigation system for generating all the conditions required for capturing and inspection from the design information and a scanning electron microscope system for actually performing capturing and inspection. Moreover, in the case of performing a matching process between designed data and a SEM image, deformed parts are corrected by use of edge information in accordance with multiple directions and smoothing thereof. Furthermore, a SEM image corresponding to a detected position is re-registered as a template, and the matching process is thereby performed.
摘要:
An operator-free and fully automated semiconductor inspection system with high throughput is realized. All conditions required for capturing and inspection are generated from design information such as CAD data. In order to perform actual inspection under the conditions, a semiconductor inspection system is composed of a navigation system for generating all the conditions required for capturing and inspection from the design information and a scanning electron microscope system for actually performing capturing and inspection. Moreover, in the case of performing a matching process between designed data and a SEM image, deformed parts are corrected by use of edge information in accordance with multiple directions and smoothing thereof. Furthermore, a SEM image corresponding to a detected position is re-registered as a template, and the matching process is thereby performed.
摘要:
An object of the present invention is to provide a charged particle beam apparatus and an alignment method of the charged particle beam apparatus, which make it possible to align an optical axis of a charged particle beam easily even when a state of the charged particle beam changes. The present invention comprises calculation means for calculating a deflection amount of an alignment deflector which performs an axis alignment for an objective lens, a plurality of calculation methods for calculating the deflection amount is memorized in the calculation means, and a selection means for selecting at least one of the calculation methods is provided.
摘要:
A method for determining a depression/protrusion, especially of a line and space pattern formed on a sample, and an apparatus therefor. A charged particle beam is scanned with its direction being inclined to the original optical axis of the charged particle beam or a sample stage is inclined, broadening of a detected signal in a line scanning direction of the charged particle beam is measured, the broadening is compared with that when the charged particle beam is scanned with its direction being parallel to the original optical axis of the charged particle beam, and a depression/protrusion of the scanned portion is determined on the basis of increase/decrease of the broadening.
摘要:
A method for determining a depression/protrusion, especially of a line and space pattern formed on a sample, and an apparatus therefor. A charged particle beam is scanned with its direction being inclined to the original optical axis of the charged particle beam or a sample stage is inclined, broadening of a detected signal in a line scanning direction of the charged particle beam is measured, the broadening is compared with that when the charged particle beam is scanned with its direction being parallel to the original optical axis of the charged particle beam, and a depression/protrusion of the scanned portion is determined on the basis of increase/decrease of the broadening.