Array substrate with openings in insulation layer for auxiliary electrode and method for fabricating thereof

    公开(公告)号:US10950636B2

    公开(公告)日:2021-03-16

    申请号:US16792291

    申请日:2020-02-16

    Abstract: A method for fabricating an array substrate is provided. A gate insulation layer, first and second gates and a first interlayered insulation layer are formed on first and second active layers in order. A photolithography and etching process is performed by using a photo mask to form first to fourth contact holes in the gate insulation layer and the first interlayered insulation layer. First and second sources and first and second drains which are respectively connected to the first and second active layers through the first to fourth contact holes are formed. A second interlayered insulation layer is formed. Another photolithography and etching process is performed by using said photo mask to form first to third openings and a via hole in the second interlayered insulation layer, wherein along a normal direction, the third opening and the first contact hole are overlapped, the via hole and the second contact hole are overlapped, the first opening and the third contact hole are overlapped, and the second opening and the fourth contact hole are overlapped.

    ARRAY SUBSTRATE AND METHOD FOR FABRICATING THEREOF

    公开(公告)号:US20200185432A1

    公开(公告)日:2020-06-11

    申请号:US16792291

    申请日:2020-02-16

    Abstract: A method for fabricating an array substrate is provided. A gate insulation layer, first and second gates and a first interlayered insulation layer are formed on first and second active layers in order. A photolithography and etching process is performed by using a photo mask to form first to fourth contact holes in the gate insulation layer and the first interlayered insulation layer. First and second sources and first and second drains which are respectively connected to the first and second active layers through the first to fourth contact holes are formed. A second interlayered insulation layer is formed. Another photolithography and etching process is performed by using said photo mask to form first to third openings and a via hole in the second interlayered insulation layer, wherein along a normal direction, the third opening and the first contact hole are overlapped, the via hole and the second contact hole are overlapped, the first opening and the third contact hole are overlapped, and the second opening and the fourth contact hole are overlapped.

    Display device and method of manufacturing thin film transistor

    公开(公告)号:US11664457B2

    公开(公告)日:2023-05-30

    申请号:US17312706

    申请日:2019-06-04

    Abstract: The invention provides a display device and a method of manufacturing a thin film transistor. The method of manufacturing a thin film transistor comprises: (A) providing a substrate; (B) forming a light shielding layer on the substrate, and patterning the light shielding layer to form a patterned light shielding layer; (C) forming a buffer layer on the substrate; (D) forming a semiconductor layer on the substrate, and patterning the semiconductor layer to form a patterned semiconductor layer; (E) forming an insulating layer on the substrate; and (F) forming a conductive layer on the substrate, and patterning the conductive layer to form a patterned conductive layer; wherein the same mask is used for patterning the light shielding layer and the semiconductor layer. Photoelectric effect of the thin film transistor outside the display region can be effectively avoided, while reducing the number of masks in the production process.

    ARRAY SUBSTRATE AND METHOD FOR FABRICATING THEREOF

    公开(公告)号:US20190035825A1

    公开(公告)日:2019-01-31

    申请号:US15784211

    申请日:2017-10-16

    Abstract: A method for fabricating an array substrate is provided. A gate insulation layer, first and second gates and a first interlayered insulation layer are formed on first and second active layers in order. A photolithography and etching process is performed by using a photo mask to form first to fourth contact holes in the gate insulation layer and the first interlayered insulation layer. First and second sources and first and second drains which are respectively connected to the first and second active layers through the first to fourth contact holes are formed. A second interlayered insulation layer is formed. Another photolithography and etching process is performed by using said photo mask to form first to third openings and a via hole in the second interlayered insulation layer, wherein along a normal direction, the third opening and the first contact hole are overlapped, the via hole and the second contact hole are overlapped, the first opening and the third contact hole are overlapped, and the second opening and the fourth contact hole are overlapped.

    Display panel
    6.
    发明授权

    公开(公告)号:US11973086B2

    公开(公告)日:2024-04-30

    申请号:US17312654

    申请日:2019-10-21

    CPC classification number: H01L27/124 H01L27/1225 H01L27/1251

    Abstract: The invention discloses a display panel, comprising: a first substrate including a display region and a peripheral region adjacent to each other; a plurality of pixel units disposed on the first substrate and located in the display region; a control circuit disposed on the first substrate, located in the peripheral region and electrically connected to the pixel units; a planarization layer disposed on the first substrate, extending from the display region to the peripheral region and covering the pixel units and the control circuit; and a bonding pad disposed on the first substrate and located above the planarization layer; wherein a projection area of the bonding pad on the first substrate and a projection area of the control circuit on the first substrate have an overlapped region.

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