公开(公告)号：US07767022B1

公开(公告)日：2010-08-03

申请号：US11788384

申请日：2007-04-19

申请人： Avinash K. Gupta ,  Ilya Zwieback ,  Jihong Chen ,  Marcus Getkin ,  Walter R. M. Stepko ,  Edward Semenas

发明人： Avinash K. Gupta ,  Ilya Zwieback ,  Jihong Chen ,  Marcus Getkin ,  Walter R. M. Stepko ,  Edward Semenas

IPC分类号： C30B23/00

CPC分类号： C30B29/36 ,  C30B23/00 ,  C30B33/02

摘要： A crystal is sublimation grown in a crucible by way of a temperature gradient in the presence of between 1 and 200 Torr of inert gas. The pressure of the inert gas is then increased to between 300 and 600 Torr, while the temperature gradient is maintained substantially constant. The temperature gradient is then reduced and the temperature in the crucible is increased sufficiently to anneal the crystal. Following cooling and removal from the crucible, the crystal is heated in the presence of oxygen in an enclosure to a temperature sufficient to remove unwanted material from the crystal. Following cooling and removal from the enclosure, the crystal surrounded by another instance of the source material is heated in a crucible in the presence 200 and 600 Torr of inert gas to a temperature sufficient to anneal the crystal.

摘要翻译： 在惰性气体的1至200乇的存在下，通过温度梯度在坩埚中生长晶体。 然后将惰性气体的压力增加到300至600托之间，同时温度梯度保持基本恒定。 然后降低温度梯度，并使坩埚中的温度充分增加以使晶体退火。 在从坩埚中冷却和除去之后，将晶体在外壳中的氧气存在下加热到足以从晶体去除不需要的材料的温度。 在从壳体冷却和除去之后，将源材料的另一个实例包围的晶体在惰性气体存在的200和600乇的坩埚中加热到足以使晶体退火的温度。

公开(公告)号：US20220002906A1

公开(公告)日：2022-01-06

申请号：US17447742

申请日：2021-09-15

申请人： Avinash Gupta ,  Ilya Zwieback ,  Edward Semenas ,  Marcus Getkin ,  Patrick Flynn

发明人： Avinash Gupta ,  Ilya Zwieback ,  Edward Semenas ,  Marcus Getkin ,  Patrick Flynn

IPC分类号： C30B29/36 ,  C30B23/00

摘要： A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.