Etching Process
    2.
    发明申请
    Etching Process 审中-公开
    蚀刻工艺

    公开(公告)号:US20090068844A1

    公开(公告)日:2009-03-12

    申请号:US12296139

    申请日:2007-04-06

    摘要: Mixtures of fluorine and inert gases like nitrogen and/or argon can be used for etching of semiconductors, solar panels and flat panels (TFTs and LCDs), and for cleaning of semiconductor surfaces and plasma chambers. Preferably, fluorine is comprised in an amount of 15 to 25 vol.-% in binary mixtures. The gas mixtures can be used as substitute or drop-in for respective mixtures comprising NF3 and permit a very flexible operation of plasma apparatus. For example, apparatus tuned for NF3/Ar mixtures can be operated without further tuning using fluorine and argon, optionally together with nitrogen. The fluorine content is preferably in the range of 1 to 5 vol.-%, if ternary mixtures of fluorine, nitrogen and argon are used.

    摘要翻译: 氟和惰性气体如氮气和/或氩气的混合物可用于半导体,太阳能电池板和平板(TFT和LCD)的蚀刻以及半导体表面和等离子体室的清洗。 优选地,氟以二元混合物计含量为15至25体积%。 气体混合物可以用作包含NF 3的相应混合物的替代或滴加,并允许等离子体装置的非常灵活的操作。 例如,调节NF3 / Ar混合物的设备可以在不进一步调节的情况下使用氟和氩,任选与氮一起进行操作。 如果使用氟,氮和氩的三元混合物,氟含量优选在1至5体积%的范围内。